Tsunehisa Sakoda

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating field effect transistors with different gate...
- Patent number 7,927,941
- Issue date Apr 19, 2011
- Fujitsu Semiconductor Limited
- Hiroshi Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,893,508
- Issue date Feb 22, 2011
- Fujitsu Semiconductor Limited
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with different gate widths
- Patent number 7,768,039
- Issue date Aug 3, 2010
- Fujitsu Semiconductor Limited
- Hiroshi Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,521,325
- Issue date Apr 21, 2009
- Fujitsu Microelectronics Limited
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high dielectric constant gate insulatin...
- Patent number 7,265,401
- Issue date Sep 4, 2007
- Fujitsu Limited
- Masaomi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field effect transistors with different gate widths
- Publication number 20100255668
- Publication date Oct 7, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Hiroshi NOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070232004
- Publication date Oct 4, 2007
- FUJITSU LIMITED
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060292782
- Publication date Dec 28, 2006
- FUJITSU LIMITED
- Hiroshi Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060214243
- Publication date Sep 28, 2006
- FUJITSU LIMITED
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having high dielectric constant gate insulatin...
- Publication number 20060172498
- Publication date Aug 3, 2006
- FUJITSU LIMITED
- Masaomi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with high dielectric constant insulator and it...
- Publication number 20050142715
- Publication date Jun 30, 2005
- FUJITSU LIMITED
- Tsunehisa Sakoda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...