Tsunemasa Taguchi

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Osaka, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming a doped ZnSe single crystal
- Patent number 5,169,799
- Issue date Dec 8, 1992
- Sumitomo Electric Industries, Ltd.
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductive single crystal
- Patent number 5,015,327
- Issue date May 14, 1991
- Production Engineering Association of Shin-Osaka
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductive single crystal
- Patent number 4,983,249
- Issue date Jan 8, 1991
- Production Engineering Association
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing single-crystal ZnSe
- Patent number 4,866,007
- Issue date Sep 12, 1989
- Sumitomo Electric Industries Co.
- Tsunemasa Taguchi
- C30 - CRYSTAL GROWTH