Tsung-Ching Wu

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spatial optical emission spectroscopy for etch uniformity
- Patent number 11,668,602
- Issue date Jun 6, 2023
- Applied Materials, Inc.
- Blake Erickson
- G01 - MEASURING TESTING
Information Patent Grant
Memory device and systems and methods for selecting memory cells in...
- Patent number 9,595,335
- Issue date Mar 14, 2017
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Selecting memory cells using source lines
- Patent number 9,142,306
- Issue date Sep 22, 2015
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-layer sensor stack
- Patent number 8,946,574
- Issue date Feb 3, 2015
- Atmel Corporation
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Panel
- Patent number 8,797,285
- Issue date Aug 5, 2014
- Atmel Corporation
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Circuit to control voltage ramp rate
- Patent number 7,848,151
- Issue date Dec 7, 2010
- Atmel Corporation
- Johnny Chan
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit to control voltage ramp rate
- Patent number 7,512,008
- Issue date Mar 31, 2009
- Atmel Corporation
- Johnny Chan
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication process for programmable and erasable MOS memory device
- Patent number RE35094
- Issue date Nov 21, 1995
- Atmel Corporation
- Tsung-Ching Wu
- 437 -
Information Patent Grant
Stress reduction for non-volatile memory cell
- Patent number 5,434,815
- Issue date Jul 18, 1995
- Atmel Corporation
- George Smarandoiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication process for programmable and erasable MOS memory device
- Patent number 5,081,054
- Issue date Jan 14, 1992
- Atmel Corporation
- Tsung-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable and erasable MOS memory device
- Patent number 5,066,992
- Issue date Nov 19, 1991
- Atmel Corporation
- Tsung-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed charge storage structure
- Patent number 4,970,565
- Issue date Nov 13, 1990
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
EPROM fabrication process forming tub regions for high voltage devices
- Patent number 4,859,619
- Issue date Aug 22, 1989
- Atmel Corporation
- Tsung-Ching Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS floating gate memory cell containing tunneling diffusion region...
- Patent number 4,822,750
- Issue date Apr 18, 1989
- Seeq Technology, Inc.
- Gust Perlegos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS floating gate memory cell and process for fabricating same
- Patent number 4,701,776
- Issue date Oct 20, 1987
- Seeq Technology, Inc.
- Gust Perlegos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPATIAL OPTICAL EMISSION SPECTROSCOPY FOR ETCH UNIFORMITY
- Publication number 20230258500
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Blake Erickson
- G01 - MEASURING TESTING
Information Patent Application
SPATIAL OPTICAL EMISSION SPECTROSCOPY FOR ETCH UNIFORMITY
- Publication number 20220333989
- Publication date Oct 20, 2022
- Applied Materials, Inc.
- Blake Erickson
- G01 - MEASURING TESTING
Information Patent Application
SELECTING MEMORY CELLS
- Publication number 20160005477
- Publication date Jan 7, 2016
- ATMEL CORPORATION
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTING MEMORY CELLS
- Publication number 20140198571
- Publication date Jul 17, 2014
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Touch Sensing Based On Signal Reflections
- Publication number 20140132523
- Publication date May 15, 2014
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Touch Sensor with a Conductive Line Having Different Widths
- Publication number 20120262412
- Publication date Oct 18, 2012
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PANEL
- Publication number 20120262382
- Publication date Oct 18, 2012
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Two-Layer Sensor Stack
- Publication number 20120261242
- Publication date Oct 18, 2012
- David Brent Guard
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT TO CONTROL VOLTAGE RAMP RATE
- Publication number 20090168586
- Publication date Jul 2, 2009
- ATMEL CORPORATION
- Johnny Chan
- G11 - INFORMATION STORAGE
Information Patent Application
Circuit to control voltage ramp rate
- Publication number 20070121382
- Publication date May 31, 2007
- Johnny Chan
- G11 - INFORMATION STORAGE

Tsung-Ching Wu

Person

Patents Grantslast 30 patents

Spatial optical emission spectroscopy for etch uniformity

Memory device and systems and methods for selecting memory cells in...

Selecting memory cells using source lines

Two-layer sensor stack

Panel

Circuit to control voltage ramp rate

Circuit to control voltage ramp rate

Fabrication process for programmable and erasable MOS memory device

Stress reduction for non-volatile memory cell

Fabrication process for programmable and erasable MOS memory device

Programmable and erasable MOS memory device

Sealed charge storage structure

EPROM fabrication process forming tub regions for high voltage devices

MOS floating gate memory cell containing tunneling diffusion region...

MOS floating gate memory cell and process for fabricating same

Patents Applicationslast 30 patents

SPATIAL OPTICAL EMISSION SPECTROSCOPY FOR ETCH UNIFORMITY

SPATIAL OPTICAL EMISSION SPECTROSCOPY FOR ETCH UNIFORMITY

SELECTING MEMORY CELLS

SELECTING MEMORY CELLS

Touch Sensing Based On Signal Reflections

Touch Sensor with a Conductive Line Having Different Widths

PANEL

Two-Layer Sensor Stack

CIRCUIT TO CONTROL VOLTAGE RAMP RATE

Circuit to control voltage ramp rate