Tsung-Mu Lai

Person

Hsinchu County, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory cell and associated cell array structure
- Patent number 12,069,873
- Issue date Aug 20, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming control method applied to resistive random-access memory ce...
- Patent number 12,063,774
- Issue date Aug 13, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory for physically unclonable fun...
- Patent number 11,980,026
- Issue date May 7, 2024
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage switch device
- Patent number 11,929,434
- Issue date Mar 12, 2024
- eMemory Technology Inc.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and associated cell array struc...
- Patent number 11,663,455
- Issue date May 30, 2023
- eMemory Technology Inc.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Random code generator with non-volatile memory
- Patent number 11,416,416
- Issue date Aug 16, 2022
- eMemory Technology Inc.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell array of multi-time programmable non-volatile memory
- Patent number 11,398,259
- Issue date Jul 26, 2022
- eMemory Technology Inc.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage switch device
- Patent number 11,335,805
- Issue date May 17, 2022
- eMemory Technology Inc.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-cell per bit nonvolatile memory unit
- Patent number 11,063,772
- Issue date Jul 13, 2021
- eMemory Technology Inc.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Near-memory computation system for analog computing
- Patent number 11,062,773
- Issue date Jul 13, 2021
- eMemory Technology Inc.
- Chun-Fu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory cell compliant to a near memory computation system
- Patent number 10,991,430
- Issue date Apr 27, 2021
- eMemory Technology Inc.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Random bit cell with nonvolatile memory cell
- Patent number 10,910,062
- Issue date Feb 2, 2021
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with one shared deep doped region
- Patent number 10,255,980
- Issue date Apr 9, 2019
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with one shared deep doped region
- Patent number 9,941,011
- Issue date Apr 10, 2018
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array capable of performing byte erase operation
- Patent number 9,847,133
- Issue date Dec 19, 2017
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory structure
- Patent number 9,041,089
- Issue date May 26, 2015
- eMemory Technology Inc.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for operating one-time programmable read-only memory
- Patent number 8,089,798
- Issue date Jan 3, 2012
- eMemory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage tolerance circuit
- Patent number 7,965,481
- Issue date Jun 21, 2011
- eMemory Technology Inc.
- Shao-Chang Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable read only memory and programming method thereof
- Patent number 7,872,898
- Issue date Jan 18, 2011
- Ememory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY CELL OF ARRAY STRUCTURE AND ASSOCIATED CONTROLL...
- Publication number 20240395342
- Publication date Nov 28, 2024
- EMEMORY TECHNOLOGY INC.
- Chia-Jung HSU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY AND ASSOCIATED CONTROL METHOD
- Publication number 20240320138
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STORAGE TRANSISTOR OF CHARGE-TRAPPING NON-VOLATILE MEMORY
- Publication number 20240324225
- Publication date Sep 26, 2024
- EMEMORY TECHNOLOGY INC.
- Chun-Hsiao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR NONVOLATILE CHARGE-TRAPPING MEMORY APPARATUS
- Publication number 20230292516
- Publication date Sep 14, 2023
- EMEMORY TECHNOLOGY INC.
- Chun-Hsiao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE
- Publication number 20230262994
- Publication date Aug 17, 2023
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL OF CHARGE-TRAPPING NON-VOLATILE MEMORY
- Publication number 20230240075
- Publication date Jul 27, 2023
- EMEMORY TECHNOLOGY INC.
- Chun-Hsiao LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CONTROL METHOD APPLIED TO RESISTIVE RANDOM-ACCESS MEMORY CE...
- Publication number 20230046230
- Publication date Feb 16, 2023
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY FOR PHYSICALLY UNCLONABLE FUN...
- Publication number 20230052438
- Publication date Feb 16, 2023
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE SWITCH DEVICE
- Publication number 20220246758
- Publication date Aug 4, 2022
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE
- Publication number 20220199622
- Publication date Jun 23, 2022
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRAY OF MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY
- Publication number 20210287746
- Publication date Sep 16, 2021
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND ASSOCIATED CELL ARRAY STRUC...
- Publication number 20210249601
- Publication date Aug 12, 2021
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SWITCH DEVICE
- Publication number 20210074855
- Publication date Mar 11, 2021
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEAR-MEMORY COMPUTATION SYSTEM FOR ANALOG COMPUTING
- Publication number 20200365209
- Publication date Nov 19, 2020
- EMEMORY TECHNOLOGY INC.
- Chun-Fu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANDOM BIT CELL WITH NONVOLATILE MEMORY CELL
- Publication number 20200258579
- Publication date Aug 13, 2020
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
RANDOM CODE GENERATOR WITH NON-VOLATILE MEMORY
- Publication number 20200226073
- Publication date Jul 16, 2020
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY CELL COMPLIANT TO A NEAR-MEMORY COMPUTATION SYSTEM
- Publication number 20200202941
- Publication date Jun 25, 2020
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-CELL PER BIT NONVOLATILE MEMORY UNIT
- Publication number 20190164981
- Publication date May 30, 2019
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION
- Publication number 20180190357
- Publication date Jul 5, 2018
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION
- Publication number 20170206968
- Publication date Jul 20, 2017
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY CAPABLE OF PERFORMING BYTE ERASE OPERATION
- Publication number 20170206970
- Publication date Jul 20, 2017
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY UNIT WITH VOLTAGE PASSING DEVICE
- Publication number 20160293261
- Publication date Oct 6, 2016
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY STRUCTURE
- Publication number 20140361358
- Publication date Dec 11, 2014
- EMEMORY TECHNOLOGY INC.
- Chih-Hsin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE READ ONLY MEMORY AND PROGRAMMING METHOD THEREOF
- Publication number 20100265755
- Publication date Oct 21, 2010
- Ememory Technology Inc.
- Wen-Hao Ching
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY
- Publication number 20100073985
- Publication date Mar 25, 2010
- Ememory Technology Inc.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE READ-ONLY MEMORY
- Publication number 20100006924
- Publication date Jan 14, 2010
- EMEMORY TECHNOLOGY INC.
- Hsin-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TOLERANCE CIRCUIT
- Publication number 20100002344
- Publication date Jan 7, 2010
- Shao-Chang Huang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE READ-ONLY MEMORY
- Publication number 20080296701
- Publication date Dec 4, 2008
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu Lai
- G11 - INFORMATION STORAGE

Tsung-Mu Lai

Person

Patents Grantslast 30 patents

Resistive memory cell and associated cell array structure

Forming control method applied to resistive random-access memory ce...

Magnetoresistive random access memory for physically unclonable fun...

High voltage switch device

Resistive random-access memory cell and associated cell array struc...

Random code generator with non-volatile memory

Memory cell array of multi-time programmable non-volatile memory

High voltage switch device

Multi-cell per bit nonvolatile memory unit

Near-memory computation system for analog computing

Non-volatile memory cell compliant to a near memory computation system

Random bit cell with nonvolatile memory cell

Memory array with one shared deep doped region

Memory array with one shared deep doped region

Memory array capable of performing byte erase operation

Nonvolatile memory structure

Method for operating one-time programmable read-only memory

High voltage tolerance circuit

One time programmable read only memory and programming method thereof

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY CELL OF ARRAY STRUCTURE AND ASSOCIATED CONTROLL...

NON-VOLATILE MEMORY AND ASSOCIATED CONTROL METHOD

STORAGE TRANSISTOR OF CHARGE-TRAPPING NON-VOLATILE MEMORY

MANUFACTURING METHOD FOR NONVOLATILE CHARGE-TRAPPING MEMORY APPARATUS

RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE

MEMORY CELL OF CHARGE-TRAPPING NON-VOLATILE MEMORY

FORMING CONTROL METHOD APPLIED TO RESISTIVE RANDOM-ACCESS MEMORY CE...

MAGNETORESISTIVE RANDOM ACCESS MEMORY FOR PHYSICALLY UNCLONABLE FUN...

HIGH VOLTAGE SWITCH DEVICE

RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE

MEMORY CELL ARRAY OF MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY

RESISTIVE RANDOM-ACCESS MEMORY CELL AND ASSOCIATED CELL ARRAY STRUC...

HIGH VOLTAGE SWITCH DEVICE

NEAR-MEMORY COMPUTATION SYSTEM FOR ANALOG COMPUTING

RANDOM BIT CELL WITH NONVOLATILE MEMORY CELL

RANDOM CODE GENERATOR WITH NON-VOLATILE MEMORY

NON-VOLATILE MEMORY CELL COMPLIANT TO A NEAR-MEMORY COMPUTATION SYSTEM

MULTI-CELL PER BIT NONVOLATILE MEMORY UNIT

MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION

MEMORY ARRAY WITH ONE SHARED DEEP DOPED REGION

MEMORY ARRAY CAPABLE OF PERFORMING BYTE ERASE OPERATION

MEMORY UNIT WITH VOLTAGE PASSING DEVICE

NONVOLATILE MEMORY STRUCTURE

ONE TIME PROGRAMMABLE READ ONLY MEMORY AND PROGRAMMING METHOD THEREOF

METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY

ONE-TIME PROGRAMMABLE READ-ONLY MEMORY

HIGH VOLTAGE TOLERANCE CIRCUIT

ONE-TIME PROGRAMMABLE READ-ONLY MEMORY