Tsutomu Hori

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a silicon carbide epitaxial substrate
- Patent number 12,176,399
- Issue date Dec 24, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,530,491
- Issue date Dec 20, 2022
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer
- Patent number 11,459,670
- Issue date Oct 4, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus, method for manufacturing silicon carbide...
- Patent number 11,066,756
- Issue date Jul 20, 2021
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 11,053,607
- Issue date Jul 6, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal substrate, silicon carbide epitaxial...
- Patent number 10,998,406
- Issue date May 4, 2021
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,865,501
- Issue date Dec 15, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,825,903
- Issue date Nov 3, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,811,500
- Issue date Oct 20, 2020
- Sumitomo Electric Industries, Ltd
- Hironori Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of manufacturing silicon carbide single crystal
- Patent number 10,724,151
- Issue date Jul 28, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing a...
- Patent number 10,714,572
- Issue date Jul 14, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal substrate, silicon carbide epitaxial...
- Patent number 10,700,169
- Issue date Jun 30, 2020
- Sumitomo Electric Industries, Ltd
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,513,799
- Issue date Dec 24, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus, method for manufacturing silicon carbide...
- Patent number 10,494,735
- Issue date Dec 3, 2019
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide ingot and method for manufacturing silicon carbide...
- Patent number 10,427,324
- Issue date Oct 1, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 10,361,273
- Issue date Jul 23, 2019
- Sumitomo Electric Industries, Ltd.
- Naoki Kaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide epitaxial substrate
- Patent number 10,337,119
- Issue date Jul 2, 2019
- Sumitomo Electric Industries, Ltd
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal substrate, silicon carbide epitaxial...
- Patent number 10,283,596
- Issue date May 7, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,246,797
- Issue date Apr 2, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,202,709
- Issue date Feb 12, 2019
- Sumitomo Electric Industries, Ltd.
- Sho Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide single crystal
- Patent number 10,184,191
- Issue date Jan 22, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,121,865
- Issue date Nov 6, 2018
- Sumitomo Electric Industries, Ltd
- Tsutomu Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 9,856,583
- Issue date Jan 2, 2018
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 9,845,549
- Issue date Dec 19, 2017
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 9,799,735
- Issue date Oct 24, 2017
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,400
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 9,777,401
- Issue date Oct 3, 2017
- Sumitomo Electric Industries, Ltd.
- Shunsaku Ueta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide substrate
- Patent number 9,631,296
- Issue date Apr 25, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20220367643
- Publication date Nov 17, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20220059658
- Publication date Feb 24, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20210328024
- Publication date Oct 21, 2021
- Sumitomo Electric Industries, Ltd.
- Taro ENOKIZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20210320005
- Publication date Oct 14, 2021
- Kenji KANBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20210296443
- Publication date Sep 23, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20210225646
- Publication date Jul 22, 2021
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20200362470
- Publication date Nov 19, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...
- Publication number 20200287000
- Publication date Sep 10, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20200219981
- Publication date Jul 9, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20200063286
- Publication date Feb 27, 2020
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20200013858
- Publication date Jan 9, 2020
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190355820
- Publication date Nov 21, 2019
- Sumitomo Electric Industries, Ltd.
- Keiji WADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING A...
- Publication number 20190245044
- Publication date Aug 8, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...
- Publication number 20190221647
- Publication date Jul 18, 2019
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20190127880
- Publication date May 2, 2019
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20180363166
- Publication date Dec 20, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...
- Publication number 20180323262
- Publication date Nov 8, 2018
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20180254324
- Publication date Sep 6, 2018
- SUMITOMO ELECTRIC INDUSTRIES.,LTD.
- Naoki KAJI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20180245238
- Publication date Aug 30, 2018
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20180202068
- Publication date Jul 19, 2018
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20170335487
- Publication date Nov 23, 2017
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20170335486
- Publication date Nov 23, 2017
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20170314161
- Publication date Nov 2, 2017
- Sumitomo Electric Industries, Ltd.
- Sho SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20170288025
- Publication date Oct 5, 2017
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20170152609
- Publication date Jun 1, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160340796
- Publication date Nov 24, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...
- Publication number 20160236375
- Publication date Aug 18, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20160155808
- Publication date Jun 2, 2016
- Sumitomo Electric Industries, Ltd.
- Tsubasa HONKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160138187
- Publication date May 19, 2016
- Sumitomo Electric Industries, Ltd.
- Shin HARADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160138185
- Publication date May 19, 2016
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH

Tsutomu Hori

Person

Patents Grantslast 30 patents

Method of manufacturing a silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial wafer

Crystal growth apparatus, method for manufacturing silicon carbide...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide single crystal substrate, silicon carbide epitaxial...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial substrate and method for manufacturing si...

Device of manufacturing silicon carbide single crystal

Silicon carbide epitaxial substrate and method for manufacturing a...

Silicon carbide single crystal substrate, silicon carbide epitaxial...

Method for manufacturing silicon carbide single crystal

Crystal growth apparatus, method for manufacturing silicon carbide...

Silicon carbide ingot and method for manufacturing silicon carbide...

Silicon carbide substrate

Method of manufacturing silicon carbide epitaxial substrate

Silicon carbide single crystal substrate, silicon carbide epitaxial...

Method for manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal

Silicon carbide epitaxial substrate and method of manufacturing sil...

Method of manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal and silicon...

Method for producing single crystal

Method for producing single crystal

Method of manufacturing silicon carbide substrate

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL WAFER

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...

SILICON CARBIDE EPITAXIAL SUBSTRATE

CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING A...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL...

SILICON CARBIDE SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

CRYSTAL GROWTH APPARATUS, METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING SILICON CARBIDE...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL