Tsutomu Matsushita

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral DMOS FET device with reduced on resistance
- Patent number 5,192,989
- Issue date Mar 9, 1993
- Nissan Motor Co., Ltd.
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high surge endurance
- Patent number 5,184,204
- Issue date Feb 2, 1993
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky tunnel transistor device
- Patent number 5,049,953
- Issue date Sep 17, 1991
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,040,034
- Issue date Aug 13, 1991
- Nissan Motor Co., Ltd.
- Yoshinori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,969,020
- Issue date Nov 6, 1990
- Nissan Motor Company Limited
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Input protector device for semiconductor device
- Patent number 4,937,639
- Issue date Jun 26, 1990
- Nissan Motor Company, Limited
- Kenji Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,928,159
- Issue date May 22, 1990
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MOSFET device
- Patent number 4,893,158
- Issue date Jan 9, 1990
- Nissan Motor Co., Ltd.
- Teruyoshi Mihara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
IC with recombination layer and guard ring separating VDMOS and CMO...
- Patent number 4,881,112
- Issue date Nov 14, 1989
- Nissan Motor Company, Limited
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC device having a vertical MOSFET and an auxiliary component
- Patent number 4,881,107
- Issue date Nov 14, 1989
- Nissan Motor Company, Ltd.
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device having vertical MOS provided with Zener d...
- Patent number 4,862,233
- Issue date Aug 29, 1989
- Nissan Motor Company Limited
- Tsutomu Matsushita
- H01 - BASIC ELECTRIC ELEMENTS

Tsutomu Matsushita

Person

Patents Grantslast 30 patents

Lateral DMOS FET device with reduced on resistance

Semiconductor device with high surge endurance

Schottky tunnel transistor device

Semiconductor device

Semiconductor device

Input protector device for semiconductor device

Semiconductor device

MOSFET device

IC with recombination layer and guard ring separating VDMOS and CMO...

IC device having a vertical MOSFET and an auxiliary component

Integrated circuit device having vertical MOS provided with Zener d...