Tsutomu Sato

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Poughquag, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,645,656
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for making strained channel field effect trans...
- Patent number 7,135,724
- Issue date Nov 14, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hollow region and method of manufactu...
- Patent number 7,075,169
- Issue date Jul 11, 2006
- Kabushiki Kaisha Toshiba
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060292779
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MAKING STRAINED CHANNEL FIELD EFFECT TRANS...
- Publication number 20060065914
- Publication date Mar 30, 2006
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a hollow region and method of manufactu...
- Publication number 20040124439
- Publication date Jul 1, 2004
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS