Tsutomu Satoh

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Niigata, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating silicon semiconductor discrete wafer
- Patent number 6,332,833
- Issue date Dec 25, 2001
- Naoetsu Electronics Company
- Hisashi Ohshima
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Production method for a discrete structure substrate
- Patent number 6,093,648
- Issue date Jul 25, 2000
- Naoetsu Electronics Company
- Tsutomu Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wet etching method for silicon semiconductor wafer
- Patent number 6,090,720
- Issue date Jul 18, 2000
- Naoetsu Electronics Company
- Tsutomu Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating silicon semiconductor discrete wafer
- Patent number 6,066,562
- Issue date May 23, 2000
- Naoetsu Electronics Company
- Hisashi Ohshima
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Process and apparatus for making discrete type substrates by re-sli...
- Patent number 5,240,882
- Issue date Aug 31, 1993
- Naoetsu Electronics Co.
- Tsutomu Satoh
- B28 - WORKING CEMENT, CLAY, OR STONE