Tsutomu Tashiro

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile semiconductor memory device including two-transistor ty...
- Patent number 6,316,317
- Issue date Nov 13, 2001
- NEC Corporation
- Masato Kawata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and method for manufacturin...
- Patent number 6,314,022
- Issue date Nov 6, 2001
- NEC Corporation
- Masato Kawata
- G11 - INFORMATION STORAGE
Information Patent Grant
IC for converting optical signal to electrical signal
- Patent number 6,118,916
- Issue date Sep 12, 2000
- NEC Corporation
- Takenori Morikawa
- G02 - OPTICS
Information Patent Grant
Semiconductor photodiode and a method for fabricating the same
- Patent number 6,080,600
- Issue date Jun 27, 2000
- NEC Corporation
- Mitsuhiro Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetection semiconductor device
- Patent number 5,796,118
- Issue date Aug 18, 1998
- NEC Corporation
- Takenori Morikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having a GESC layer between silicon layers wit...
- Patent number 5,783,839
- Issue date Jul 21, 1998
- NEC Corporation
- Takenori Morikawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for fabricating semiconductor device with phot...
- Patent number 5,747,860
- Issue date May 5, 1998
- NEC Corporation
- Mitsuhiro Sugiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor photodiode
- Patent number 5,731,622
- Issue date Mar 24, 1998
- NEC Corporation
- Mitsuhiro Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 5,576,221
- Issue date Nov 19, 1996
- NEC Corporation
- Hisashi Takemura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transversal bipolar transistor integrated with another transistor c...
- Patent number 5,508,553
- Issue date Apr 16, 1996
- NEC Corporation
- Satoshi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an improved low resistive contact
- Patent number 5,475,257
- Issue date Dec 12, 1995
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer epitaxtial base heterojunction bipolar transistor
- Patent number 5,323,032
- Issue date Jun 21, 1994
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,321,301
- Issue date Jun 14, 1994
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor having thin base region
- Patent number 5,296,391
- Issue date Mar 22, 1994
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 5,285,088
- Issue date Feb 8, 1994
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,241,211
- Issue date Aug 31, 1993
- NEC Corporation
- Tsutomu Tashiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having organic film as interlayer insulating f...
- Patent number 5,124,781
- Issue date Jun 23, 1992
- NEC Corporation
- Tsutomu Tashiro
- H01 - BASIC ELECTRIC ELEMENTS

Tsutomu Tashiro

Person

Patents Grantslast 30 patents

Nonvolatile semiconductor memory device including two-transistor ty...

Nonvolatile semiconductor memory device and method for manufacturin...

IC for converting optical signal to electrical signal

Semiconductor photodiode and a method for fabricating the same

Photodetection semiconductor device

Semiconductor device having a GESC layer between silicon layers wit...

Method and apparatus for fabricating semiconductor device with phot...

Semiconductor photodiode

Manufacturing method of semiconductor device

Transversal bipolar transistor integrated with another transistor c...

Semiconductor device having an improved low resistive contact

Dual layer epitaxtial base heterojunction bipolar transistor

Semiconductor device

Method of manufacturing a bipolar transistor having thin base region

High electron mobility transistor

Semiconductor device

Semiconductor device having organic film as interlayer insulating f...