Tsutomu Yatsuo

Person

Tsukuba-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Inrush current limiting circuit
- Patent number 9,806,520
- Issue date Oct 31, 2017
- Yazaki Corporation
- Osamu Kimura
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Silicon carbide semiconductor apparatus and method of manufacturing...
- Patent number 9,490,338
- Issue date Nov 8, 2016
- National Institute of Advanced Industrial Science and Technology
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and its manufacturing method
- Patent number 8,952,391
- Issue date Feb 10, 2015
- National Institute of Advanced Industrial Science and Technology
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate-type silicon carbide field effect transistor and meth...
- Patent number 8,835,933
- Issue date Sep 16, 2014
- National Institute of Advanced Industrial Science and Technology
- Takahiro Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOS field effect transistor with built-in Schottky...
- Patent number 8,003,991
- Issue date Aug 23, 2011
- National Institute of Advanced Industrial Science and Technology
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 7,935,628
- Issue date May 3, 2011
- National Institute for Advanced Industrial Science and Technology
- Shinsuke Harada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 7,880,173
- Issue date Feb 1, 2011
- National Institute of Advanced Industrial Science and Technology
- Kenji Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device, and...
- Patent number 7,811,874
- Issue date Oct 12, 2010
- National Institute of Advanced Industrial Science and Technology
- Shinsuke Harada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide semiconductor device and method for producing the same
- Patent number 7,728,336
- Issue date Jun 1, 2010
- National Institute of Advanced Industrial Science and Technology
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Inrush Current Limiting Circuit
- Publication number 20160181794
- Publication date Jun 23, 2016
- YAZAKI CORPORATION
- Osamu Kimura
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING...
- Publication number 20140113421
- Publication date Apr 24, 2014
- SANYO ELECTRIC CO., LTD.
- Shinsuke HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED GATE-TYPE SILICON CARBIDE FIELD EFFECT TRANSISTOR AND METH...
- Publication number 20120153302
- Publication date Jun 21, 2012
- Takahiro Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and method for producing the same
- Publication number 20100012951
- Publication date Jan 21, 2010
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20090321746
- Publication date Dec 31, 2009
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY...
- Publication number 20090173949
- Publication date Jul 9, 2009
- National Institute of Adv. Industrial Sci. & Tech.
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCI...
- Publication number 20090134402
- Publication date May 28, 2009
- National Inst of Adv Industrial Science and Tech.
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND...
- Publication number 20090072244
- Publication date Mar 19, 2009
- National Institute of Advanced Ind. Sci. & Tech
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20080203400
- Publication date Aug 28, 2008
- National Institute of Advanced Indust. Sci & Tech
- Kenji Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060108589
- Publication date May 25, 2006
- NATIONAL INSTITUTE OF ADVANCED UNDUST SCI & TECH
- Kenji Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and its method of manufacturin...
- Publication number 20060057796
- Publication date Mar 16, 2006
- NATIONAL INSTIT. OF ADV.INDUSTRIAL SCI. AND TECH.
- Shinsuke Harada
- H01 - BASIC ELECTRIC ELEMENTS

Tsutomu Yatsuo

Person

Patents Grantslast 30 patents

Inrush current limiting circuit

Silicon carbide semiconductor apparatus and method of manufacturing...

Silicon carbide semiconductor device and its manufacturing method

Recessed gate-type silicon carbide field effect transistor and meth...

Silicon carbide MOS field effect transistor with built-in Schottky...

Silicon carbide semiconductor device and method for producing the same

Semiconductor device and method of manufacturing same

Method for manufacturing silicon carbide semiconductor device, and...

Silicon carbide semiconductor device and method for producing the same

Patents Applicationslast 30 patents

Inrush Current Limiting Circuit

SILICON CARBIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING...

RECESSED GATE-TYPE SILICON CARBIDE FIELD EFFECT TRANSISTOR AND METH...

Silicon carbide semiconductor device and method for producing the same

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY...

SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCI...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Semiconductor device

Silicon carbide semiconductor device and its method of manufacturin...