Tsuyoshi Aso

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Inorganic rapid alternating process for silicon etch
- Patent number 8,574,447
- Issue date Nov 5, 2013
- Lam Research Corporation
- Tsuyoshi Aso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for protecting silicon or silicon carbide electrode surface...
- Patent number 7,226,869
- Issue date Jun 5, 2007
- Lam Research Corporation
- Kenji Takeshita
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Dielectric isolation substrate
- Patent number 5,151,768
- Issue date Sep 29, 1992
- Oki Electric Industry Co., Ltd.
- Tsuyoshi Aso
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH
- Publication number 20110244686
- Publication date Oct 6, 2011
- LAM RESEARCH CORPORATION
- Tsuyoshi Aso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for protecting silicon or silicon carbide electrode surface...
- Publication number 20060091104
- Publication date May 4, 2006
- Kenji Takeshita
- B08 - CLEANING