Tsuyoshi Ishikawa

Person

Nisshin-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Electron emission device and transistor provided with the same
- Patent number 9,779,906
- Issue date Oct 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Tsuyoshi Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical MOSFET structure that utilizes...
- Patent number 9,276,075
- Issue date Mar 1, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,136,372
- Issue date Sep 15, 2015
- Toyota Jidosha Kabushiki Kaisha
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide semiconductor device
- Patent number 8,975,139
- Issue date Mar 10, 2015
- Denso Corporation
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 8,952,430
- Issue date Feb 10, 2015
- Denso Corporation
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SIC semiconductor device and method for manufacturing the same
- Patent number 8,710,586
- Issue date Apr 29, 2014
- Denso Corporation
- Toshimasa Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing th...
- Patent number 8,618,555
- Issue date Dec 31, 2013
- Denso Corporation
- Naohiro Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method of th...
- Patent number 8,575,689
- Issue date Nov 5, 2013
- Denso Corporation
- Tomohiro Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 8,525,223
- Issue date Sep 3, 2013
- Denso Corporation
- Hiroki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 8,518,809
- Issue date Aug 27, 2013
- Denso Corporation
- Hiroki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device including cell region and peripheral region ha...
- Patent number 8,492,867
- Issue date Jul 23, 2013
- Denso Corporation
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,470,672
- Issue date Jun 25, 2013
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device having Schottky barrier diode and method f...
- Patent number 8,436,365
- Issue date May 7, 2013
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME
- Publication number 20170243712
- Publication date Aug 24, 2017
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Tsuyoshi ISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20140252465
- Publication date Sep 11, 2014
- DENSO CORPORATION
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20140175459
- Publication date Jun 26, 2014
- Toyota Jidosha Kabushiki Kaisha
- Kensaku Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130330896
- Publication date Dec 12, 2013
- Toyota Jidosha Kabushiki Kaisha
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130075760
- Publication date Mar 28, 2013
- DENSO CORPORATION
- Hidefumi Takaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130001592
- Publication date Jan 3, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20120319136
- Publication date Dec 20, 2012
- Toyota Jidosha Kabushiki Kaisha
- Masato Noborio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120273801
- Publication date Nov 1, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hiroki WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120181551
- Publication date Jul 19, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Shinichiro Miyahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...
- Publication number 20120161154
- Publication date Jun 28, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Tomohiro MIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120142173
- Publication date Jun 7, 2012
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120061682
- Publication date Mar 15, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Toshimasa Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120052642
- Publication date Mar 1, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takeshi ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HA...
- Publication number 20110309464
- Publication date Dec 22, 2011
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kensaku YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20110291110
- Publication date Dec 1, 2011
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Naohiro SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...
- Publication number 20110204383
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20110203513
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH

Tsuyoshi Ishikawa

Person

Patents Grantslast 30 patents

Electron emission device and transistor provided with the same

Semiconductor device having vertical MOSFET structure that utilizes...

Silicon carbide semiconductor device

Manufacturing method of silicon carbide semiconductor device

Semiconductor device and method for manufacturing semiconductor device

SIC semiconductor device and method for manufacturing the same

Silicon carbide semiconductor device and method of manufacturing th...

Silicon carbide semiconductor device and manufacturing method of th...

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystal

Semiconductor device including cell region and peripheral region ha...

Method of manufacturing silicon carbide semiconductor device

SiC semiconductor device having Schottky barrier diode and method f...

Patents Applicationslast 30 patents

ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF TH...

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HA...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE