Tsz-Mei KWOK

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,075,607
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 12,057,450
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,009,427
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined source/drain epitaxy regions and method forming same
- Patent number 11,948,971
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxy source/drain regions
- Patent number 11,916,071
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 11,908,742
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 11,749,752
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 11,652,105
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,574,916
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,489,074
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain stressors with recessed top surfaces
- Patent number 11,437,515
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices with strained source/drain structures and method of forming...
- Patent number 11,411,098
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having epitaxy regions with reduced facets
- Patent number 11,411,109
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell and manufacturing method thereof
- Patent number 11,355,500
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of integrated circuit
- Patent number 11,276,692
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined source/drain epitaxy regions and method forming same
- Patent number 11,101,347
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 11,037,826
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for semiconductor device
- Patent number 11,031,398
- Issue date Jun 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for manufacturing the same
- Patent number 10,943,790
- Issue date Mar 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having epitaxy regions with reduced facets
- Patent number 10,916,656
- Issue date Feb 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming same
- Patent number 10,879,128
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping profile for strained source/drain region
- Patent number 10,861,971
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with non-uniform p-type impurity profile
- Patent number 10,797,173
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,749,029
- Issue date Aug 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having epitaxy regions with reduced facets
- Patent number 10,734,520
- Issue date Aug 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for semiconductor device
- Patent number 10,727,229
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain stressors with recessed top surfaces
- Patent number 10,727,342
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of a semiconductor de...
- Patent number 10,714,487
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 10,546,784
- Issue date Jan 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 10,510,753
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240397692
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS
- Publication number 20240355826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240297252
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...
- Publication number 20240249979
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Source/Drain Epitaxy Regions and Method Forming Same
- Publication number 20240204044
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS
- Publication number 20240203987
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20230369491
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES GROWN ON MATERIAL WITH A CRYSTALLOGRAPHIC ORIE...
- Publication number 20230343819
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Source/Drain Regions and Methods of Forming the Same
- Publication number 20230275123
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230124966
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230049249
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting the Profile of Source/Drain Regions to Reduce Leakage
- Publication number 20230028591
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220384437
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES
- Publication number 20220352346
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei KWOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS
- Publication number 20220181320
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220028856
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME
- Publication number 20210376073
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Merged Epitaxial Features with Arc-Like...
- Publication number 20210313230
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Epitaxy Regions with Reduced Facets
- Publication number 20210184037
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION
- Publication number 20210119048
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210074710
- Publication date Mar 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210036154
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS Devices Having Epitaxy Regions with Reduced Facets
- Publication number 20200357921
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsueh-Chang Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20200343250
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source and Drain Stressors with Recessed Top Surfaces
- Publication number 20200343381
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Source/Drain Epitaxy Regions and Method Forming Same
- Publication number 20200176560
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Merged Epitaxial Features with Arc-Like...
- Publication number 20200161185
- Publication date May 21, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF INTEGRATED CIRCUIT
- Publication number 20200119006
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Same
- Publication number 20200075423
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Semiconductor Device
- Publication number 20200075597
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS

Tsz-Mei KWOK

Person

Patents Grantslast 30 patents

Semiconductor device

Epitaxy regions with large landing areas for contact plugs

Semiconductor device and manufacturing method thereof

Confined source/drain epitaxy regions and method forming same

Semiconductor device having epitaxy source/drain regions

Semiconductor device having merged epitaxial features with arc-like...

Doping profile for strained source/drain region

Epitaxy regions with large landing areas for contact plugs

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Source and drain stressors with recessed top surfaces

Devices with strained source/drain structures and method of forming...

MOS devices having epitaxy regions with reduced facets

Static random access memory cell and manufacturing method thereof

Manufacturing method of integrated circuit

Confined source/drain epitaxy regions and method forming same

Semiconductor device having merged epitaxial features with arc-like...

Structure and method for semiconductor device

Semiconductor devices and methods for manufacturing the same

MOS devices having epitaxy regions with reduced facets

Semiconductor device and method of forming same

Doping profile for strained source/drain region

MOS devices with non-uniform p-type impurity profile

Semiconductor device and manufacturing method thereof

MOS devices having epitaxy regions with reduced facets

Structure and method for semiconductor device

Source and drain stressors with recessed top surfaces

Semiconductor device and manufacturing method of a semiconductor de...

Semiconductor device having merged epitaxial features with arc-like...

Integrated circuit and manufacturing method thereof

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...

Confined Source/Drain Epitaxy Regions and Method Forming Same

SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

EPITAXIAL STRUCTURES GROWN ON MATERIAL WITH A CRYSTALLOGRAPHIC ORIE...

Transistor Source/Drain Regions and Methods of Forming the Same

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Adjusting the Profile of Source/Drain Regions to Reduce Leakage

Epitaxy Regions with Large Landing Areas for Contact Plugs

METHOD OF FORMING DEVICES WITH STRAINED SOURCE/DRAIN STRUCTURES

SEMICONDUCTOR DEVICE HAVING EPITAXY SOURCE/DRAIN REGIONS

Epitaxy Regions with Large Landing Areas for Contact Plugs

CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME

Semiconductor Device Having Merged Epitaxial Features with Arc-Like...

MOS Devices Having Epitaxy Regions with Reduced Facets

DOPING PROFILE FOR STRAINED SOURCE/DRAIN REGION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MOS Devices Having Epitaxy Regions with Reduced Facets

STATIC RANDOM ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

Source and Drain Stressors with Recessed Top Surfaces

Confined Source/Drain Epitaxy Regions and Method Forming Same

Semiconductor Device Having Merged Epitaxial Features with Arc-Like...

MANUFACTURING METHOD OF INTEGRATED CIRCUIT

Semiconductor Device and Method of Forming Same

Structure and Method for Semiconductor Device