Tuan Pham

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with efficient signal routing
- Patent number 11,973,044
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Shiqian Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct memory characterization using periphery transistors
- Patent number 10,679,723
- Issue date Jun 9, 2020
- PDF Solutions, Inc.
- Dong Kyu Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Three-dimensional memory device with through-stack contact via stru...
- Patent number 10,283,566
- Issue date May 7, 2019
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ReRAM memory device employing replacement word li...
- Patent number 10,224,373
- Issue date Mar 5, 2019
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 10,115,770
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset backside contact via structures for a three-dimensional memo...
- Patent number 10,103,161
- Issue date Oct 16, 2018
- SanDisk Technologies LLC
- Fumitoshi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with leakage reducing support pilla...
- Patent number 10,014,316
- Issue date Jul 3, 2018
- SanDisk Technologies LLC
- Fabo Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-plane offset in backside contact via structures for a three-d...
- Patent number 9,917,093
- Issue date Mar 13, 2018
- SanDisk Technologies LLC
- Cheng-Chung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having a shaped epitaxial channel...
- Patent number 9,842,851
- Issue date Dec 12, 2017
- SanDisk Technologies LLC
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively depositing floating gate material in a memory...
- Patent number 9,768,270
- Issue date Sep 19, 2017
- SanDisk Technologies LLC
- Marika Gunji-Yoneoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory hole structure in three dimensional memory
- Patent number 9,711,522
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Chan Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing source select gate elect...
- Patent number 9,659,956
- Issue date May 23, 2017
- SanDisk Technologies LLC
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple patterning NAND flash memory
- Patent number 9,613,806
- Issue date Apr 4, 2017
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blocking oxide in memory opening integration scheme for three-dimen...
- Patent number 9,601,508
- Issue date Mar 21, 2017
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap isolation in non-volatile memory
- Patent number 9,460,958
- Issue date Oct 4, 2016
- SanDisk Technologies LLC
- Vinod R Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal control gate structures and air gap isolation in non-volatile...
- Patent number 9,379,120
- Issue date Jun 28, 2016
- SanDisk Technologies Inc.
- Vinod Robert Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between bit lines with side protection
- Patent number 9,337,085
- Issue date May 10, 2016
- SanDisk Technologies Inc.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between bit lines with top protection
- Patent number 9,330,969
- Issue date May 3, 2016
- SanDisk Technologies Inc.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for making NAND flash memory
- Patent number 9,224,475
- Issue date Dec 29, 2015
- SanDisk Technologies Inc.
- Jongsun Sel
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of making word lines and select lines in NAND flash memory
- Patent number 9,153,595
- Issue date Oct 6, 2015
- SanDisk Technologies Inc.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full metal gate replacement process for NAND flash memory
- Patent number 9,129,854
- Issue date Sep 8, 2015
- SanDisk Technologies Inc.
- Kazuya Tokunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processes for NAND flash memory fabrication
- Patent number 9,099,532
- Issue date Aug 4, 2015
- SanDisk Technologies Inc.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple patterning NAND flash memory with stepped mandrel
- Patent number 8,969,206
- Issue date Mar 3, 2015
- SanDisk Technologies Inc.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell floating gate replacement
- Patent number 8,932,948
- Issue date Jan 13, 2015
- SanDisk Technologies, Inc
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming PN floating gate non-volatile storage elements an...
- Patent number 8,877,627
- Issue date Nov 4, 2014
- SanDisk Technologies Inc.
- Mohan Dunga
- G11 - INFORMATION STORAGE
Information Patent Grant
Shared bit line string architecture
- Patent number 8,879,331
- Issue date Nov 4, 2014
- SanDisk Technologies Inc.
- Jongsun Sel
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with sidewall nitridation
- Patent number 8,853,763
- Issue date Oct 7, 2014
- SanDisk Technologies Inc.
- Tuan Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap isolation in non-volatile memory
- Patent number 8,603,890
- Issue date Dec 10, 2013
- SanDisk Technologies Inc.
- Vinod Robert Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating non-volatile memory with air gaps
- Patent number 8,546,239
- Issue date Oct 1, 2013
- SanDisk Technologies Inc.
- Eli Harari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-/Metal floating gate non-volatile storage element
- Patent number 8,503,229
- Issue date Aug 6, 2013
- SanDisk Technologies Inc.
- Sanghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION
- Publication number 20230386576
- Publication date Nov 30, 2023
- SANDISK TECHNOLOGIES LLC
- Shiqian Shao
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH EFFICIENT SIGNAL ROUTING
- Publication number 20230207504
- Publication date Jun 29, 2023
- SANDISK TECHNOLOGIES LLC
- Shiqian Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL ARRAY OF SURROUND GATE VERTICAL FIELD EFFECT TRANSI...
- Publication number 20190051703
- Publication date Feb 14, 2019
- SanDisk Technologies LLC
- Jongsun SEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
- Publication number 20190034125
- Publication date Jan 31, 2019
- SanDisk Technologies LLC
- Jongsun Sel
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL RERAM MEMORY DEVICE EMPLOYING REPLACEMENT WORD LI...
- Publication number 20190006418
- Publication date Jan 3, 2019
- SanDisk Technologies LLC
- Jongsun SEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...
- Publication number 20180350879
- Publication date Dec 6, 2018
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
- Publication number 20180247976
- Publication date Aug 30, 2018
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH LEAKAGE REDUCING SUPPORT PILLA...
- Publication number 20180108671
- Publication date Apr 19, 2018
- SanDisk Technologies LLC
- Fabo YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OFFSET BACKSIDE CONTACT VIA STRUCTURES FOR A THREE-DIMENSIONAL MEMO...
- Publication number 20170373087
- Publication date Dec 28, 2017
- SanDisk Technologies LLC
- Fumitoshi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-PLANE OFFSET IN BACKSIDE CONTACT VIA STRUCTURES FOR A THREE-D...
- Publication number 20170373078
- Publication date Dec 28, 2017
- SanDisk Technologies LLC
- Cheng-Chung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING A SHAPED EPITAXIAL CHANNEL...
- Publication number 20170125438
- Publication date May 4, 2017
- SANDISK TECHNOLOGIES INC.
- Jayavel Pachamuthu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...
- Publication number 20160315095
- Publication date Oct 27, 2016
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Hole Structure in Three Dimensional Memory
- Publication number 20160099254
- Publication date Apr 7, 2016
- SANDISK TECHNOLOGIES INC.
- Chan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVELY DEPOSITING FLOATING GATE MATERIAL IN A MEMORY...
- Publication number 20150380419
- Publication date Dec 31, 2015
- SANDISK TECHNOLOGIES INC.
- Marika GUNJI-YONEOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gap Formation Between Bit Lines with Top Protection
- Publication number 20150228532
- Publication date Aug 13, 2015
- SANDISK TECHNOLOGIES INC.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gap Formation Between Bit Lines with Side Protection
- Publication number 20150228582
- Publication date Aug 13, 2015
- SANDISK TECHNOLOGIES INC.
- Jong Sun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple Patterning NAND Flash Memory with Stepped Mandrel
- Publication number 20150064907
- Publication date Mar 5, 2015
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple Patterning NAND Flash Memory
- Publication number 20150064906
- Publication date Mar 5, 2015
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell Floating Gate Replacement
- Publication number 20140312403
- Publication date Oct 23, 2014
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- G11 - INFORMATION STORAGE
Information Patent Application
SHARED BIT LINE STRING ARCHITECTURE
- Publication number 20140269100
- Publication date Sep 18, 2014
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- G11 - INFORMATION STORAGE
Information Patent Application
Air Gap Isolation In Non-Volatile Memory
- Publication number 20140120692
- Publication date May 1, 2014
- SANDISK TECHNOLOGIES INC.
- Vinod R. Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING PN FLOATING GATE NON-VOLATILE STORAGE ELEMENTS AN...
- Publication number 20140106525
- Publication date Apr 17, 2014
- SANDISK TECHNOLOGIES INC.
- Mohan Dunga
- G11 - INFORMATION STORAGE
Information Patent Application
Full Metal Gate Replacement Process for NAND Flash Memory
- Publication number 20140097482
- Publication date Apr 10, 2014
- SANDISK TECHNOLOGIES INC.
- Kazuya Tokunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processes for NAND Flash Memory Fabrication
- Publication number 20140080299
- Publication date Mar 20, 2014
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Making Word Lines and Select Lines in NAND Flash Memory
- Publication number 20140078826
- Publication date Mar 20, 2014
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures and Methods for Making NAND Flash Memory
- Publication number 20140054669
- Publication date Feb 27, 2014
- Jongsun Sel
- G11 - INFORMATION STORAGE
Information Patent Application
Metal Control Gate Structures And Air Gap Isolation In Non-Volatile...
- Publication number 20130334587
- Publication date Dec 19, 2013
- SANDISK TECHNOLOGIES INC.
- Vinod Robert Purayath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuits With Sidewall Nitridation
- Publication number 20120326220
- Publication date Dec 27, 2012
- Tuan Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
- Publication number 20120243337
- Publication date Sep 27, 2012
- Sanghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN FLOATING GATE NON-VOLATILE STORAGE ELEMENT
- Publication number 20120228691
- Publication date Sep 13, 2012
- Mohan Dunga
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Non-volatile memory with efficient signal routing

Direct memory characterization using periphery transistors

Three-dimensional memory device with through-stack contact via stru...

Three-dimensional ReRAM memory device employing replacement word li...

Methods and apparatus for three-dimensional nonvolatile memory

Offset backside contact via structures for a three-dimensional memo...

Three-dimensional memory device with leakage reducing support pilla...

Inter-plane offset in backside contact via structures for a three-d...

Three-dimensional memory devices having a shaped epitaxial channel...

Method of selectively depositing floating gate material in a memory...

Memory hole structure in three dimensional memory

Three-dimensional memory device containing source select gate elect...

Triple patterning NAND flash memory

Blocking oxide in memory opening integration scheme for three-dimen...

Air gap isolation in non-volatile memory

Metal control gate structures and air gap isolation in non-volatile...

Air gap formation between bit lines with side protection

Air gap formation between bit lines with top protection

Structures and methods for making NAND flash memory

Methods of making word lines and select lines in NAND flash memory

Full metal gate replacement process for NAND flash memory

Processes for NAND flash memory fabrication

Triple patterning NAND flash memory with stepped mandrel

Memory cell floating gate replacement

Method of forming PN floating gate non-volatile storage elements an...

Shared bit line string architecture

Integrated circuits with sidewall nitridation

Air gap isolation in non-volatile memory

Methods of fabricating non-volatile memory with air gaps

P-/Metal floating gate non-volatile storage element

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION

NON-VOLATILE MEMORY WITH EFFICIENT SIGNAL ROUTING

TWO-DIMENSIONAL ARRAY OF SURROUND GATE VERTICAL FIELD EFFECT TRANSI...

METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

THREE-DIMENSIONAL RERAM MEMORY DEVICE EMPLOYING REPLACEMENT WORD LI...

THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRU...

METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

THREE-DIMENSIONAL MEMORY DEVICE WITH LEAKAGE REDUCING SUPPORT PILLA...

OFFSET BACKSIDE CONTACT VIA STRUCTURES FOR A THREE-DIMENSIONAL MEMO...

INTER-PLANE OFFSET IN BACKSIDE CONTACT VIA STRUCTURES FOR A THREE-D...

THREE-DIMENSIONAL MEMORY DEVICES HAVING A SHAPED EPITAXIAL CHANNEL...

BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...

Memory Hole Structure in Three Dimensional Memory

METHOD OF SELECTIVELY DEPOSITING FLOATING GATE MATERIAL IN A MEMORY...

Air Gap Formation Between Bit Lines with Top Protection

Air Gap Formation Between Bit Lines with Side Protection

Triple Patterning NAND Flash Memory with Stepped Mandrel

Triple Patterning NAND Flash Memory

Memory Cell Floating Gate Replacement

SHARED BIT LINE STRING ARCHITECTURE

Air Gap Isolation In Non-Volatile Memory

METHOD OF FORMING PN FLOATING GATE NON-VOLATILE STORAGE ELEMENTS AN...

Full Metal Gate Replacement Process for NAND Flash Memory

Processes for NAND Flash Memory Fabrication

Methods of Making Word Lines and Select Lines in NAND Flash Memory

Structures and Methods for Making NAND Flash Memory

Metal Control Gate Structures And Air Gap Isolation In Non-Volatile...

Integrated Circuits With Sidewall Nitridation

P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT

PN FLOATING GATE NON-VOLATILE STORAGE ELEMENT