Tunenori Yamauchi

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor fabrication method
- Patent number 7,951,727
- Issue date May 31, 2011
- Fujitsu Semiconductor Limited
- Toshiharu Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride film forming method, semiconductor device fabrication metho...
- Patent number 7,696,107
- Issue date Apr 13, 2010
- Fujitsu Microelectronics Limited
- Toshiharu Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor devices separated by an air...
- Patent number 5,705,425
- Issue date Jan 6, 1998
- Fujitsu Limited
- Takao Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device by forming contacts afte...
- Patent number 5,409,843
- Issue date Apr 25, 1995
- Fujitsu, Ltd.
- Tunenori Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising high-speed and high-current transis...
- Patent number 5,151,765
- Issue date Sep 29, 1992
- Fujitsu Limited
- Tunenori Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a BIMOS semiconductor device
- Patent number 5,045,484
- Issue date Sep 3, 1991
- Fujitsu Limited
- Shinichi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a Bi-MIS semiconductor device
- Patent number 4,980,303
- Issue date Dec 25, 1990
- Fujitsu Limited
- Tunenori Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a semiconductor device containing deep emitter and a...
- Patent number 4,783,423
- Issue date Nov 8, 1988
- Fujitsu Limited
- Tunenori Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE FABRICATION METHO...
- Publication number 20100151654
- Publication date Jun 17, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Toshiharu Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride film forming method, semiconductor device fabrication metho...
- Publication number 20060166516
- Publication date Jul 27, 2006
- FUJITSU LIMITED
- Toshiharu Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS

Tunenori Yamauchi

Person

Patents Grantslast 30 patents

Capacitor fabrication method

Nitride film forming method, semiconductor device fabrication metho...

Process for manufacturing semiconductor devices separated by an air...

Method of producing a semiconductor device by forming contacts afte...

Semiconductor device comprising high-speed and high-current transis...

Fabrication method of a BIMOS semiconductor device

Manufacturing method of a Bi-MIS semiconductor device

Fabrication of a semiconductor device containing deep emitter and a...

Patents Applicationslast 30 patents

NITRIDE FILM FORMING METHOD, SEMICONDUCTOR DEVICE FABRICATION METHO...

Nitride film forming method, semiconductor device fabrication metho...