Tung-Sheng Hsiao

Person

New Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Flat bottom electrode via (BEVA) top surface for memory
- Patent number 11,844,286
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flat bottom electrode via (BEVA) top surface for memory
- Patent number 11,751,485
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a flat bottom electrode via (BEVA) top surface f...
- Patent number 11,201,281
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a flat bottom electrode via (BEVA) top surface f...
- Patent number 10,763,426
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a flat bottom electrode via (BEVA) top surface f...
- Patent number 10,566,519
- Issue date Feb 18, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate device and method of fabricating the same
- Patent number 8,951,864
- Issue date Feb 10, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20220093849
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20220085280
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20200357981
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20190386204
- Publication date Dec 19, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...
- Publication number 20190058109
- Publication date Feb 21, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20130207174
- Publication date Aug 15, 2013
- TAIWAN SEMICONDUCTOR MANAFACTURING COMPANY, LTD.
- Yu-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS

Tung-Sheng Hsiao

Person

Patents Grantslast 30 patents

Flat bottom electrode via (BEVA) top surface for memory

Flat bottom electrode via (BEVA) top surface for memory

Method for forming a flat bottom electrode via (BEVA) top surface f...

Method for forming a flat bottom electrode via (BEVA) top surface f...

Method for forming a flat bottom electrode via (BEVA) top surface f...

Split-gate device and method of fabricating the same

Patents Applicationslast 30 patents

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

METHOD FOR FORMING A FLAT BOTTOM ELECTRODE VIA (BEVA) TOP SURFACE F...

SPLIT-GATE DEVICE AND METHOD OF FABRICATING THE SAME