Tuoh Bin Ng

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon phosphide semiconductor device
- Patent number 12,243,784
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFet with source/drain regions comprising an insulator layer
- Patent number 11,823,949
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon phosphide semiconductor device
- Patent number 11,749,567
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 11,069,578
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FinFET device with gaps in the source/drain region
- Patent number 11,004,725
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 10,991,630
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 10,340,190
- Issue date Jul 2, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance control in epitaxial structures of finFET
- Patent number 10,170,370
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance control in epitaxial structures of finFET
- Patent number 9,953,875
- Issue date Apr 24, 2018
- Taiwan Semiconductor Manufacturing Company
- Cheng-Wen Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH SOURCE/DRAIN REGIONS COMPRISING AN INSULATOR LAYER
- Publication number 20240021466
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Phosphide Semiconductor Device
- Publication number 20230360974
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20210351083
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210265196
- Publication date Aug 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20200395237
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20200381309
- Publication date Dec 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20200105621
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190164835
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE CONTROL IN EPITAXIAL STRUCTURES OF FINFET
- Publication number 20180315660
- Publication date Nov 1, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wen CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Tuoh Bin Ng

Person

Patents Grantslast 30 patents

Silicon phosphide semiconductor device

FinFet with source/drain regions comprising an insulator layer

Silicon phosphide semiconductor device

Method of manufacturing a semiconductor device

Method of forming a FinFET device with gaps in the source/drain region

Semiconductor device and method

Semiconductor device structure and method for forming the same

Contact resistance control in epitaxial structures of finFET

Contact resistance control in epitaxial structures of finFET

Patents Applicationslast 30 patents

FINFET WITH SOURCE/DRAIN REGIONS COMPRISING AN INSULATOR LAYER

Silicon Phosphide Semiconductor Device

Method of Manufacturing a Semiconductor Device

Semiconductor Device and Method

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Semiconductor Device and Method

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

CONTACT RESISTANCE CONTROL IN EPITAXIAL STRUCTURES OF FINFET