Tyler Lowrey

Person

Southfield, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual resistive-material regions for phase change memory devices
- Patent number 10,522,757
- Issue date Dec 31, 2019
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistance heater for phase change memory devices
- Patent number 10,522,756
- Issue date Dec 31, 2019
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,570,163
- Issue date Feb 14, 2017
- OVONYX MEMORY TECHNOLOGY, LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,251,895
- Issue date Feb 2, 2016
- Carlow Innovations LLC
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 9,036,409
- Issue date May 19, 2015
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with low reset current
- Patent number 9,000,408
- Issue date Apr 7, 2015
- Ovonyx, Inc.
- Sergey Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistance heater for phase change devices and manufacturing m...
- Patent number 8,952,299
- Issue date Feb 10, 2015
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistance memory
- Patent number 8,908,413
- Issue date Dec 9, 2014
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,861,293
- Issue date Oct 14, 2014
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for using a bit specific reference level to read a phase cha...
- Patent number 8,705,306
- Issue date Apr 22, 2014
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing phase change material to improve programming speed
- Patent number 8,658,510
- Issue date Feb 25, 2014
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Immunity of phase change material to disturb in the amorphous phase
- Patent number 8,634,226
- Issue date Jan 21, 2014
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of making same
- Patent number 8,581,223
- Issue date Nov 12, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual resistance heater for phase change devices and manufacturing m...
- Patent number 8,513,576
- Issue date Aug 20, 2013
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable matrix array with chalcogenide material
- Patent number 8,379,439
- Issue date Feb 19, 2013
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel variable resistance memory cell utilizing crystalline pr...
- Patent number 8,363,446
- Issue date Jan 29, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory controller
- Patent number 8,363,458
- Issue date Jan 29, 2013
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Breakdown layer via lateral diffusion
- Patent number 8,350,661
- Issue date Jan 8, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistance memory
- Patent number 8,351,250
- Issue date Jan 8, 2013
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change device with offset contact
- Patent number 8,344,350
- Issue date Jan 1, 2013
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing phase change material to improve programming speed
- Patent number 8,269,206
- Issue date Sep 18, 2012
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a bit specific reference level to read a memory
- Patent number 8,259,525
- Issue date Sep 4, 2012
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film input/output
- Patent number 8,228,719
- Issue date Jul 24, 2012
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for thin film memory
- Patent number 8,198,158
- Issue date Jun 12, 2012
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Ovonic threshold switch film composition for TSLAGS material
- Patent number 8,148,707
- Issue date Apr 3, 2012
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Accessing a phase change memory
- Patent number 8,120,943
- Issue date Feb 21, 2012
- Ovonyx, Inc.
- Ward Parkinson
- G11 - INFORMATION STORAGE
Information Patent Grant
Using a bit specific reference level to read a resistive memory
- Patent number 8,116,159
- Issue date Feb 14, 2012
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional phase-change memory array
- Patent number 8,093,577
- Issue date Jan 10, 2012
- Ovonyx, Inc.
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film logic circuitry
- Patent number 8,053,753
- Issue date Nov 8, 2011
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structures including vertical diode structures and me...
- Patent number 8,034,716
- Issue date Oct 11, 2011
- Micron Technology, Inc.
- Fernando Gonzalez
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
DUAL RESISTIVE-MATERIAL REGIONS FOR PHASE CHANGE MEMORY DEVICES
- Publication number 20180138406
- Publication date May 17, 2018
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150206581
- Publication date Jul 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
- Publication number 20150188050
- Publication date Jul 2, 2015
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20150109857
- Publication date Apr 23, 2015
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140328121
- Publication date Nov 6, 2014
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20140098604
- Publication date Apr 10, 2014
- OVONYX, INC.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
- Publication number 20140038379
- Publication date Feb 6, 2014
- Micron Technology, Inc.
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR PERFORMING FINANCIAL TRANSACTIONS
- Publication number 20130030881
- Publication date Jan 31, 2013
- James E. O'Toole
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Processing Phase Change Material to Improve Programming Speed
- Publication number 20120309161
- Publication date Dec 6, 2012
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using a Bit Specific Reference Level to Read a Memory
- Publication number 20120287698
- Publication date Nov 15, 2012
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Using A Bit Specific Reference Level To Read A Memory
- Publication number 20120113711
- Publication date May 10, 2012
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Method and Apparatus for Thin Film Memory
- Publication number 20120052651
- Publication date Mar 1, 2012
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Resistance Memory
- Publication number 20110305075
- Publication date Dec 15, 2011
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Immunity of Phase Change Material to Disturb in the Amorphous Phase
- Publication number 20110240943
- Publication date Oct 6, 2011
- Ovonyx, Inc.
- George Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device and Method of Making Same
- Publication number 20110227027
- Publication date Sep 22, 2011
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Device with Offset Contact
- Publication number 20110194340
- Publication date Aug 11, 2011
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Material Memory Device
- Publication number 20110189832
- Publication date Aug 4, 2011
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing Phase Change Material to Improve Programming Speed
- Publication number 20110168964
- Publication date Jul 14, 2011
- Intel Corporation
- Stephen J. Hudgens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...
- Publication number 20110155986
- Publication date Jun 30, 2011
- Yudong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film Memory System
- Publication number 20110093668
- Publication date Apr 21, 2011
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...
- Publication number 20100321991
- Publication date Dec 23, 2010
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Breakdown Layer via Lateral Diffusion
- Publication number 20100301988
- Publication date Dec 2, 2010
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Phase-Change Memory Array
- Publication number 20100276659
- Publication date Nov 4, 2010
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Die Customization using Programmable Resistance Memory Elements
- Publication number 20100201697
- Publication date Aug 12, 2010
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory
- Publication number 20100182825
- Publication date Jul 22, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
High Margin Multilevel Phase-Change Memory via Pulse Width Programming
- Publication number 20100182827
- Publication date Jul 22, 2010
- Sergey Kostylev
- G11 - INFORMATION STORAGE
Information Patent Application
OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL
- Publication number 20100163822
- Publication date Jul 1, 2010
- STMicroelectronics S.r.l.
- Stanford Ovshinsky
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Programmable Matrix Array with Chalcogenide Material
- Publication number 20100091561
- Publication date Apr 15, 2010
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory
- Publication number 20100054030
- Publication date Mar 4, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Multilevel Variable Resistance Memory Cell Utilizing Crystalline Pr...
- Publication number 20100027328
- Publication date Feb 4, 2010
- Wolodymyr Czubatyj
- G11 - INFORMATION STORAGE

Tyler Lowrey

Person

Patents Grantslast 30 patents

Dual resistive-material regions for phase change memory devices

Dual resistance heater for phase change memory devices

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Immunity of phase change material to disturb in the amorphous phase

Memory device with low reset current

Dual resistance heater for phase change devices and manufacturing m...

Programmable resistance memory

Immunity of phase change material to disturb in the amorphous phase

Method for using a bit specific reference level to read a phase cha...

Processing phase change material to improve programming speed

Immunity of phase change material to disturb in the amorphous phase

Memory device and method of making same

Dual resistance heater for phase change devices and manufacturing m...

Programmable matrix array with chalcogenide material

Multilevel variable resistance memory cell utilizing crystalline pr...

Memory controller

Breakdown layer via lateral diffusion

Programmable resistance memory

Phase change device with offset contact

Processing phase change material to improve programming speed

Using a bit specific reference level to read a memory

Thin film input/output

Method for thin film memory

Ovonic threshold switch film composition for TSLAGS material

Accessing a phase change memory

Using a bit specific reference level to read a resistive memory

Three-dimensional phase-change memory array

Thin film logic circuitry

Semiconductor structures including vertical diode structures and me...

Patents Applicationslast 30 patents

DUAL RESISTIVE-MATERIAL REGIONS FOR PHASE CHANGE MEMORY DEVICES

Immunity of Phase Change Material to Disturb in the Amorphous Phase

DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Immunity of Phase Change Material to Disturb in the Amorphous Phase

DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...

METHODS AND APPARATUS FOR PERFORMING FINANCIAL TRANSACTIONS

Processing Phase Change Material to Improve Programming Speed

Using a Bit Specific Reference Level to Read a Memory

Using A Bit Specific Reference Level To Read A Memory

Method and Apparatus for Thin Film Memory

Programmable Resistance Memory

Immunity of Phase Change Material to Disturb in the Amorphous Phase

Memory Device and Method of Making Same

Phase Change Device with Offset Contact

Phase Change Material Memory Device

Processing Phase Change Material to Improve Programming Speed

DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING M...

Thin Film Memory System

Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...

Breakdown Layer via Lateral Diffusion

Three-Dimensional Phase-Change Memory Array

Die Customization using Programmable Resistance Memory Elements

Programmable resistance memory

High Margin Multilevel Phase-Change Memory via Pulse Width Programming

OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL

Programmable Matrix Array with Chalcogenide Material

Programmable resistance memory

Multilevel Variable Resistance Memory Cell Utilizing Crystalline Pr...