Tzu-Ang Chiang

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge protection device and method of making
- Patent number 12,166,030
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,080,556
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,996,470
- Issue date May 28, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,978,801
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,901,441
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,855,193
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning method and structures resulting therefrom
- Patent number 11,848,239
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing substrate
- Patent number 11,817,330
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device
- Patent number 11,756,953
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,735,425
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,588,041
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and manufacturing method thereof
- Patent number 11,532,669
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,522,083
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus and method for processing substrate
- Patent number 11,398,391
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Po-Yuan Wang
- B08 - CLEANING
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,309,190
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 11,309,185
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,227,940
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 11,201,084
- Issue date Dec 14, 2021
- TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20240105818
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM
- Publication number 20240063060
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE PACKAGE ASSEMBLY
- Publication number 20240006211
- Publication date Jan 4, 2024
- GUDENG PRECISION INDUSTRIAL CO., LTD.
- Ming-Chien CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF MAKING
- Publication number 20230411381
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE RETAINING ASSEMBLY AND DOOR DEVICE
- Publication number 20230395412
- Publication date Dec 7, 2023
- GUDENG PRECISION INDUSTRIAL CO., LTD.
- Ming-Chien CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230352306
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20230327002
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Wei CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20230187543
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230122374
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo HWU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20230027261
- Publication date Jan 26, 2023
- TAIWAN SEMICONDUTOR MANUFACTURING COMPANY, LTD.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20220359741
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd,
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor and Method of Forming The Same
- Publication number 20220359713
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROCESSING SUBSTRATE
- Publication number 20220359235
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-YUAN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
- Publication number 20220285336
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220246442
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220189776
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu Ang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220140107
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing CO.,LTD.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20220115519
- Publication date Apr 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM
- Publication number 20220013412
- Publication date Jan 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
- Publication number 20210366737
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- PO-YUAN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
- Publication number 20210335613
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Tzu Ang CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming the Same
- Publication number 20210273073
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210225660
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210119034
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Jou Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210057488
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo HWU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210057282
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS

Tzu-Ang Chiang

Person

Patents Grantslast 30 patents

Electrostatic discharge protection device and method of making

Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Patterning method and structures resulting therefrom

Method for processing substrate

Electrostatic discharge protection device

Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

Memory device and manufacturing method thereof

Fin field-effect transistor device and method of forming the same

Substrate processing apparatus and method for processing substrate

Semiconductor device and method of manufacture

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

Patents Applicationslast 30 patents

Fin Field-Effect Transistor Device and Method of Forming the Same

PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM

PROTECTIVE PACKAGE ASSEMBLY

ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF MAKING

SUBSTRATE RETAINING ASSEMBLY AND DOOR DEVICE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

METHOD OF FORMING SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Fin Field-Effect Transistor Device and Method of Forming the Same

Fin Field-Effect Transistor and Method of Forming The Same

METHOD FOR PROCESSING SUBSTRATE

ELECTROSTATIC DISCHARGE PROTECTION DEVICE

Semiconductor Device and Method of Manufacture

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

PATTERNING METHOD AND STRUCTURES RESULTING THEREFROM

SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

Fin Field-Effect Transistor Device and Method of Forming the Same

Semiconductor Device and Method of Manufacture

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME