Ulf Gustafsson

Person

Linkoping, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and a method for production thereof
- Patent number 6,469,359
- Issue date Oct 22, 2002
- ABB Reasearch Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having a low doped drift layer of crystalline SiC
- Patent number 6,313,488
- Issue date Nov 6, 2001
- ABB Research Limited
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor of SIC
- Patent number 6,201,280
- Issue date Mar 13, 2001
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high channel mobility and a high breakd...
- Patent number 6,150,671
- Issue date Nov 21, 2000
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of SiC having an insulated gate and buried gri...
- Patent number 6,091,108
- Issue date Jul 18, 2000
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a SiC semiconductor device comprising a pn junction...
- Patent number 6,040,237
- Issue date Mar 21, 2000
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device comprising a pn junction with a voltage ab...
- Patent number 6,002,159
- Issue date Dec 14, 1999
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC Semiconductor device comprising a pn Junction with a voltage ab...
- Patent number 5,977,605
- Issue date Nov 2, 1999
- Asea Brown Boveri AB
- Mietek Bakowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device comprising a pn junction with a voltage ab...
- Patent number 5,967,795
- Issue date Oct 19, 1999
- ASEA Brown Boveri AB
- Mietek Bakowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device comprising a pn junction
- Patent number 5,932,894
- Issue date Aug 3, 1999
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled semiconductor device of SiC and a method for produ...
- Patent number 5,923,051
- Issue date Jul 13, 1999
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction termination for SiC Schottky diode
- Patent number 5,914,500
- Issue date Jun 22, 1999
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having a trench
- Patent number 5,909,039
- Issue date Jun 1, 1999
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device having semiconductor layers of SiC and...
- Patent number 5,831,287
- Issue date Nov 3, 1998
- ABB Research, Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion region stopper for PN junction in silicon carbide
- Patent number 5,801,836
- Issue date Sep 1, 1998
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field of the invention
- Patent number 5,773,849
- Issue date Jun 30, 1998
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having a trench and a method for...
- Patent number 5,763,902
- Issue date Jun 9, 1998
- ABB Research Ltd.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCTION THEREOF
- Publication number 20020094667
- Publication date Jul 18, 2002
- ABB Research Ltd.
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction termination for SiC schottky diode
- Publication number 20020017647
- Publication date Feb 14, 2002
- Mietek Bakowski
- H01 - BASIC ELECTRIC ELEMENTS

Ulf Gustafsson

Person

Patents Grantslast 30 patents

Semiconductor device and a method for production thereof

Bipolar transistor having a low doped drift layer of crystalline SiC

Transistor of SIC

Semiconductor device having high channel mobility and a high breakd...

Semiconductor device of SiC having an insulated gate and buried gri...

Fabrication of a SiC semiconductor device comprising a pn junction...

SiC semiconductor device comprising a pn junction with a voltage ab...

SiC Semiconductor device comprising a pn Junction with a voltage ab...

SiC semiconductor device comprising a pn junction with a voltage ab...

SiC semiconductor device comprising a pn junction

Field controlled semiconductor device of SiC and a method for produ...

Junction termination for SiC Schottky diode

Insulated gate bipolar transistor having a trench

Bipolar semiconductor device having semiconductor layers of SiC and...

Depletion region stopper for PN junction in silicon carbide

Field of the invention

Insulated gate bipolar transistor having a trench and a method for...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCTION THEREOF

Junction termination for SiC schottky diode