Ulrich Schwabe

Person

Vaterstetten, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated semiconductor circuit having an external contacting trac...
- Patent number 4,912,543
- Issue date Mar 27, 1990
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor circuit containing integrated bipolar and MOS transis...
- Patent number 4,874,717
- Issue date Oct 17, 1989
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of cross-couplings between n-channel and...
- Patent number 4,740,479
- Issue date Apr 26, 1988
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of gate electrodes formed of double laye...
- Patent number 4,640,844
- Issue date Feb 3, 1987
- Siemens Aktiengesellschaft
- Franz Neppl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS FETs using silicate glass layer as gate edge m...
- Patent number 4,603,472
- Issue date Aug 5, 1986
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the simultaneous manufacture of fast short channel and v...
- Patent number 4,562,638
- Issue date Jan 7, 1986
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making CMOS circuits by twin tub process and multiple imp...
- Patent number 4,525,920
- Issue date Jul 2, 1985
- Siemens Aktiengesellschaft
- Erwin P. Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing VLSI complementary MOS field effect circuits
- Patent number 4,525,378
- Issue date Jun 25, 1985
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of integrated MOS-field effect transisto...
- Patent number 4,510,670
- Issue date Apr 16, 1985
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS device using metal silicides or polysilicon fo...
- Patent number 4,505,027
- Issue date Mar 19, 1985
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing integrated MOS field effect transistors with a...
- Patent number 4,462,149
- Issue date Jul 31, 1984
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing VLSI complementary MOS field effect transistor...
- Patent number 4,459,741
- Issue date Jul 17, 1984
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing VLSI complementary MOS field effect transi...
- Patent number 4,459,740
- Issue date Jul 17, 1984
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing adjacent tubs implanted with dopant ions in t...
- Patent number 4,434,543
- Issue date Mar 6, 1984
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making very short channel length MNOS and MOS devices by...
- Patent number 4,342,149
- Issue date Aug 3, 1982
- Siemens Aktiengesellschaft
- Erwin Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MNOS Memory cell
- Patent number 4,330,850
- Issue date May 18, 1982
- Siemens Aktiengesellschaft
- Erwin Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor circuit arrangement
- Patent number 4,323,913
- Issue date Apr 6, 1982
- Siemens Aktiengesellschaft
- Helmuth Murrmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for production of integrated MOS circuits with and without...
- Patent number 4,306,353
- Issue date Dec 22, 1981
- Siemens Aktiengesellschaft
- Erwin Jacobs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an integrated multi-layer insulator memory cell
- Patent number 4,257,832
- Issue date Mar 24, 1981
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integratable semi-conductor memory cell
- Patent number 4,253,034
- Issue date Feb 24, 1981
- Siemens Aktiengesellschaft
- Peter Rydval
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for the production of a high frequency transistor
- Patent number 4,175,983
- Issue date Nov 27, 1979
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor component
- Patent number 4,143,455
- Issue date Mar 13, 1979
- Siemens Aktiengesellschaft
- Ulrich Schwabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High frequency transistor
- Patent number 4,110,779
- Issue date Aug 29, 1978
- Siemens Aktiengesellschaft
- Ronald Rathbone
- H01 - BASIC ELECTRIC ELEMENTS

Ulrich Schwabe

Person

Patents Grantslast 30 patents

Integrated semiconductor circuit having an external contacting trac...

Semiconductor circuit containing integrated bipolar and MOS transis...

Method for the manufacture of cross-couplings between n-channel and...

Method for the manufacture of gate electrodes formed of double laye...

Method of making MOS FETs using silicate glass layer as gate edge m...

Method for the simultaneous manufacture of fast short channel and v...

Method of making CMOS circuits by twin tub process and multiple imp...

Method for manufacturing VLSI complementary MOS field effect circuits

Method for the manufacture of integrated MOS-field effect transisto...

Method of making MOS device using metal silicides or polysilicon fo...

Method for producing integrated MOS field effect transistors with a...

Method for producing VLSI complementary MOS field effect transistor...

Method for manufacturing VLSI complementary MOS field effect transi...

Process for producing adjacent tubs implanted with dopant ions in t...

Method of making very short channel length MNOS and MOS devices by...

MNOS Memory cell

Integrated semiconductor circuit arrangement

Process for production of integrated MOS circuits with and without...

Process for producing an integrated multi-layer insulator memory cell

Integratable semi-conductor memory cell

Process for the production of a high frequency transistor

Method of producing a semiconductor component

High frequency transistor