Umamaheswara VEMULAPATI

Person

Wettingen, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Segmented power diode structure with improved reverse recovery
- Patent number 11,967,638
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor module
- Patent number 11,107,740
- Issue date Aug 31, 2021
- ABB Power Grids Switzerland AG
- Jürgen Schuderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional phase controlled thyristor (BiPCT)—a new semiconducto...
- Patent number 11,056,582
- Issue date Jul 6, 2021
- ABB Power Grids Switzerland AG
- Jan Vobecky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching of paralleled reverse conducting IGBT and wide bandgap sw...
- Patent number 11,043,943
- Issue date Jun 22, 2021
- ABB Power Grids Switzerland AG
- Umamaheswara Vemulapati
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide superjunction power semiconductor device and method...
- Patent number 11,031,473
- Issue date Jun 8, 2021
- ABB Power Grids Switzerland AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area efficient floating field ring termination
- Patent number 10,629,677
- Issue date Apr 21, 2020
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with floating field ring termination
- Patent number 10,566,463
- Issue date Feb 18, 2020
- ABB SCHWEIZ
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flat gate commutated thyristor
- Patent number 10,461,157
- Issue date Oct 29, 2019
- ABB Schweiz AG
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional power semiconductor
- Patent number 10,026,732
- Issue date Jul 17, 2018
- ABB Schweiz AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting power semiconductor device
- Patent number 9,543,305
- Issue date Jan 10, 2017
- ABB Schweiz AG
- Neophythos Lophitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse-conducting power semiconductor device
- Patent number 9,385,223
- Issue date Jul 5, 2016
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
- Publication number 20250015172
- Publication date Jan 9, 2025
- Hitachi Energy Ltd
- Tobias WIKSTROEM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...
- Publication number 20240162295
- Publication date May 16, 2024
- Hitachi Energy Ltd
- Umamaheswara VEMULAPATI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL THYRISTOR DEVICE
- Publication number 20240038880
- Publication date Feb 1, 2024
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230317818
- Publication date Oct 5, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Gate-Commutated Thyristor (IGCT)
- Publication number 20230111333
- Publication date Apr 13, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse Conducting Power Semiconductor Device and Method for Manufa...
- Publication number 20230046742
- Publication date Feb 16, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Bipolar Transistor
- Publication number 20220393023
- Publication date Dec 8, 2022
- Hitachi Energy Switzerland AG
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Segmented Power Diode Structure with Improved Reverse Recovery
- Publication number 20220181473
- Publication date Jun 9, 2022
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bidirectional Phase Controlled Thyristor (BiPCT) - A New Semiconduc...
- Publication number 20200411674
- Publication date Dec 31, 2020
- ABB Power Grids Switzerland AG
- Jan Vobecky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...
- Publication number 20200006496
- Publication date Jan 2, 2020
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION
- Publication number 20190288124
- Publication date Sep 19, 2019
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PARALLELED REVERSE CONDUCTING IGBT AND WIDE BANDGAP SW...
- Publication number 20190273493
- Publication date Sep 5, 2019
- ABB Schweiz AG
- Umamaheswara Vemulapati
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
AREA EFFICIENT FLOATING FIELD RING TERMINATION
- Publication number 20190035884
- Publication date Jan 31, 2019
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLAT GATE COMMUTATED THYRISTOR
- Publication number 20180204913
- Publication date Jul 19, 2018
- ABB Schweiz AG
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR MODULE
- Publication number 20180040526
- Publication date Feb 8, 2018
- ABB Schweiz AG
- Jürgen Schuderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL POWER SEMICONDUCTOR
- Publication number 20170294435
- Publication date Oct 12, 2017
- ABB Schweiz AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE
- Publication number 20160284708
- Publication date Sep 29, 2016
- ABB TECHNOLOGY AG
- Neophythos Lophitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE
- Publication number 20160013302
- Publication date Jan 14, 2016
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS

Umamaheswara VEMULAPATI

Person

Patents Grantslast 30 patents

Segmented power diode structure with improved reverse recovery

Integrated gate-commutated thyristor (IGCT)

Power semiconductor module

Bidirectional phase controlled thyristor (BiPCT)—a new semiconducto...

Switching of paralleled reverse conducting IGBT and wide bandgap sw...

Silicon carbide superjunction power semiconductor device and method...

Area efficient floating field ring termination

Power semiconductor device with floating field ring termination

Flat gate commutated thyristor

Bidirectional power semiconductor

Reverse conducting power semiconductor device

Reverse-conducting power semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...

BIDIRECTIONAL THYRISTOR DEVICE

POWER SEMICONDUCTOR DEVICE

Integrated Gate-Commutated Thyristor (IGCT)

Reverse Conducting Power Semiconductor Device and Method for Manufa...

Insulated Gate Bipolar Transistor

Segmented Power Diode Structure with Improved Reverse Recovery

Bidirectional Phase Controlled Thyristor (BiPCT) - A New Semiconduc...

SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...

POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION

SWITCHING OF PARALLELED REVERSE CONDUCTING IGBT AND WIDE BANDGAP SW...

AREA EFFICIENT FLOATING FIELD RING TERMINATION

FLAT GATE COMMUTATED THYRISTOR

POWER SEMICONDUCTOR MODULE

BIDIRECTIONAL POWER SEMICONDUCTOR

REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE

REVERSE-CONDUCTING POWER SEMICONDUCTOR DEVICE