Umamaheswari Aghoram

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical deep trench and deep trench island based deep n-type well...
- Patent number 11,869,986
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,616,011
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 11,081,558
- Issue date Aug 3, 2021
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,075,157
- Issue date Jul 27, 2021
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate formation in CMOS transistors
- Patent number 10,651,039
- Issue date May 12, 2020
- Texas Instruments Incorporated
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 10,593,773
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained LDMOS and demos
- Patent number 8,754,497
- Issue date Jun 17, 2014
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BURIED TRENCH CAPACITOR
- Publication number 20240113102
- Publication date Apr 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20240088305
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE SIZE REDUCTION AND DEEP TRENCH DENSITY INCREASE USING DEEP TREN...
- Publication number 20240038579
- Publication date Feb 1, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Asad Haider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS OR SIBLK TO PROTECT DEEP TRENCH POLYSILICON IN DEEP TRENCH AF...
- Publication number 20240038580
- Publication date Feb 1, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR (FINFET) WITH A HIGH-K MATERIAL FIELD-P...
- Publication number 20230067590
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- MING-YEH CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...
- Publication number 20230066563
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210327802
- Publication date Oct 21, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210074630
- Publication date Mar 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH HIGH-K DRAIN STI DIELECTRIC
- Publication number 20200212188
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON GATE FORMATION IN CMOS TRANSISTORS
- Publication number 20190206689
- Publication date Jul 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa MAHALINGAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH HIGH-K DRAIN STI DIELECTRIC
- Publication number 20190103471
- Publication date Apr 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED LDMOS AND DEMOS
- Publication number 20100314670
- Publication date Dec 16, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS

Umamaheswari Aghoram

Person

Patents Grantslast 30 patents

Vertical deep trench and deep trench island based deep n-type well...

IC having trench-based metal-insulator-metal capacitor

LDMOS with high-k drain STI dielectric

IC having trench-based metal-insulator-metal capacitor

Polysilicon gate formation in CMOS transistors

LDMOS with high-k drain STI dielectric

Strained LDMOS and demos

Patents Applicationslast 30 patents

BURIED TRENCH CAPACITOR

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

DIE SIZE REDUCTION AND DEEP TRENCH DENSITY INCREASE USING DEEP TREN...

LOCOS OR SIBLK TO PROTECT DEEP TRENCH POLYSILICON IN DEEP TRENCH AF...

FIN FIELD-EFFECT TRANSISTOR (FINFET) WITH A HIGH-K MATERIAL FIELD-P...

VERTICAL DEEP TRENCH AND DEEP TRENCH ISLAND BASED DEEP N-TYPE WELL...

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

LDMOS WITH HIGH-K DRAIN STI DIELECTRIC

POLYSILICON GATE FORMATION IN CMOS TRANSISTORS

LDMOS WITH HIGH-K DRAIN STI DIELECTRIC

STRAINED LDMOS AND DEMOS