Unoh KWON

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate formation scheme for n-type and p-type transistors having sepa...
- Patent number 11,031,301
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation scheme for n-type and p-type transistors having sepa...
- Patent number 10,985,075
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,756,194
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 10,395,993
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with thinned dielectric material
- Patent number 10,361,132
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to suppress work function effect by patterning...
- Patent number 10,354,999
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor stack with tunable work function
- Patent number 10,312,157
- Issue date Jun 4, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor stack with tunable work function
- Patent number 10,249,543
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,243,055
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making robust replacement metal gates and multi-thresho...
- Patent number 10,170,373
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor gate stack
- Patent number 10,079,182
- Issue date Sep 18, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for formation of replacement metal gate field...
- Patent number 10,062,618
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES, INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,002,937
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,361
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,610
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Expitaxially regrown heterostructure nanowire lateral tunnel field...
- Patent number 9,960,233
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternative threshold voltage scheme via direct metal gate patterni...
- Patent number 9,905,476
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor stack with tunable work function
- Patent number 9,859,169
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-k dielectrics in a soft m...
- Patent number 9,824,930
- Issue date Nov 21, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to suppress work function effect by patterning...
- Patent number 9,818,746
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having thin gate dielectric device and...
- Patent number 9,806,161
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate stack with tunable work function
- Patent number 9,799,656
- Issue date Oct 24, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with varying threshold voltage and fabricatio...
- Patent number 9,748,145
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-k dielectrics in a soft m...
- Patent number 9,721,842
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors having multiple effective work functions
- Patent number 9,691,662
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Expitaxially regrown heterostructure nanowire lateral tunnel field...
- Patent number 9,660,027
- Issue date May 23, 2017
- GLOBALFOUNDRIES Inc.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel TFET
- Patent number 9,627,508
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,870
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,866
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with replacement gate stacks and method of formi...
- Patent number 9,589,806
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...
- Publication number 20200118888
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...
- Publication number 20200118889
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL
- Publication number 20190318966
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20190259754
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20190027572
- Publication date Jan 24, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR GATE STACK
- Publication number 20180330996
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180190784
- Publication date Jul 5, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180047639
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION
- Publication number 20180047640
- Publication date Feb 15, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20180026035
- Publication date Jan 25, 2018
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20170358655
- Publication date Dec 14, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...
- Publication number 20170294519
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...
- Publication number 20170263707
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH VARYING THRESHOLD VOLTAGE AND FABRICATIO...
- Publication number 20170250117
- Publication date Aug 31, 2017
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170207134
- Publication date Jul 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GATE STACK WITH TUNABLE WORK FUNCTION
- Publication number 20170207219
- Publication date Jul 20, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION
- Publication number 20170207131
- Publication date Jul 20, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR GATE STACK
- Publication number 20170207132
- Publication date Jul 20, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...
- Publication number 20170200719
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170140940
- Publication date May 18, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170133477
- Publication date May 11, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNI...
- Publication number 20170133278
- Publication date May 11, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES WITH THINNED DIELECTRIC MATERIAL
- Publication number 20170110376
- Publication date Apr 20, 2017
- GLOBALFOUNDRIES INC.
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...
- Publication number 20170110539
- Publication date Apr 20, 2017
- GLOBALFOUNDRIES INC.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS
- Publication number 20170047255
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...
- Publication number 20170025315
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005006
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005003
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNI...
- Publication number 20160365347
- Publication date Dec 15, 2016
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...
- Publication number 20160351452
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gate formation scheme for n-type and p-type transistors having sepa...

Gate formation scheme for n-type and p-type transistors having sepa...

Shared metal gate stack with tunable work function

Methods and structure to form high K metal gate stack with single w...

Structures with thinned dielectric material

Structure and method to suppress work function effect by patterning...

Field effect transistor stack with tunable work function

Field effect transistor stack with tunable work function

Shared metal gate stack with tunable work function

Methods for making robust replacement metal gates and multi-thresho...

Field effect transistor gate stack

Method and structure for formation of replacement metal gate field...

Shared metal gate stack with tunable work function

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Expitaxially regrown heterostructure nanowire lateral tunnel field...

Alternative threshold voltage scheme via direct metal gate patterni...

Field effect transistor stack with tunable work function

Method of patterning dopant films in high-k dielectrics in a soft m...

Structure and method to suppress work function effect by patterning...

Integrated circuit structure having thin gate dielectric device and...

Semiconductor device having a gate stack with tunable work function

Semiconductor devices with varying threshold voltage and fabricatio...

Method of patterning dopant films in high-k dielectrics in a soft m...

Field effect transistors having multiple effective work functions

Expitaxially regrown heterostructure nanowire lateral tunnel field...

Replacement channel TFET

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Integrated circuit with replacement gate stacks and method of formi...

Patents Applicationslast 30 patents

GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...

GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...

HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR GATE STACK

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...

EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...

SEMICONDUCTOR DEVICES WITH VARYING THRESHOLD VOLTAGE AND FABRICATIO...

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

SEMICONDUCTOR DEVICE HAVING A GATE STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR STACK WITH TUNABLE WORK FUNCTION

FIELD EFFECT TRANSISTOR GATE STACK

STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNI...

STRUCTURES WITH THINNED DIELECTRIC MATERIAL

EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...

FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS

METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

ALTERNATIVE THRESHOLD VOLTAGE SCHEME VIA DIRECT METAL GATE PATTERNI...

METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...