Uwe Griebenow

Person

Markleeberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device comprising a stacked die configuration includi...
- Patent number 9,490,189
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact bars with reduced fringing capacitance in a semiconductor d...
- Patent number 9,184,095
- Issue date Nov 10, 2015
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors for a flash memory comprising a self-align...
- Patent number 9,054,207
- Issue date Jun 9, 2015
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- G11 - INFORMATION STORAGE
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,883,582
- Issue date Nov 11, 2014
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising high-K metal gate electrode structures and e...
- Patent number 8,786,027
- Issue date Jul 22, 2014
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a stacked die configuration includi...
- Patent number 8,759,960
- Issue date Jun 24, 2014
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhanced confinement of sensitive materials of a high-K metal gate...
- Patent number 8,748,281
- Issue date Jun 10, 2014
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,735,237
- Issue date May 27, 2014
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor with recessed drain and source area...
- Patent number 8,673,713
- Issue date Mar 18, 2014
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate electrode structures formed at different process...
- Patent number 8,669,151
- Issue date Mar 11, 2014
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a buried waveguide for device inter...
- Patent number 8,615,145
- Issue date Dec 24, 2013
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- G02 - OPTICS
Information Patent Grant
Asymmetric transistor devices formed by asymmetric spacers and tilt...
- Patent number 8,574,991
- Issue date Nov 5, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for enhancing transistor performance by transistor specif...
- Patent number 8,541,885
- Issue date Sep 24, 2013
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Predoped semiconductor material for a high-K metal gate electrode s...
- Patent number 8,536,036
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors for a flash memory comprising a self-align...
- Patent number 8,507,348
- Issue date Aug 13, 2013
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- G11 - INFORMATION STORAGE
Information Patent Grant
Optical signal transfer in a semiconductor device by using monolith...
- Patent number 8,508,008
- Issue date Aug 13, 2013
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- G02 - OPTICS
Information Patent Grant
High-K gate electrode structure formed after transistor fabrication...
- Patent number 8,470,661
- Issue date Jun 25, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors comprising high-K metal gate electrode structures and e...
- Patent number 8,455,314
- Issue date Jun 4, 2013
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising metal gates and semiconductor resis...
- Patent number 8,450,163
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for MOS devices by adapting a spacer width pri...
- Patent number 8,440,534
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress adjustment in stressed dielectric materials of semiconductor...
- Patent number 8,426,262
- Issue date Apr 23, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization with reduced fringing capacitance based on sili...
- Patent number 8,426,266
- Issue date Apr 23, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate approach based on a reverse offset spacer applied...
- Patent number 8,409,942
- Issue date Apr 2, 2013
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for adjusting the height of a gate electrode in a semiconduc...
- Patent number 8,361,844
- Issue date Jan 29, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double deposition of a stress-inducing layer in an interlayer diele...
- Patent number 8,349,744
- Issue date Jan 8, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased depth of drain and source regions in complementary transi...
- Patent number 8,338,894
- Issue date Dec 25, 2012
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain memorization in strained SOI substrates of semiconductor dev...
- Patent number 8,329,531
- Issue date Dec 11, 2012
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced silicon thickness of N-channel transistors in SOI CMOS devices
- Patent number 8,324,039
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in transistors comprising high-k metal gate...
- Patent number 8,318,564
- Issue date Nov 27, 2012
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ formed drain and source regions including a strain-inducing...
- Patent number 8,278,174
- Issue date Oct 2, 2012
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A STACKED DIE CONFIGURATION INCLUDI...
- Publication number 20140238045
- Publication date Aug 28, 2014
- GLOBALFOUNDRIES INC.
- Uwe Griebenow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTORS FOR A FLASH MEMORY COMPRISING A SELF-ALIGN...
- Publication number 20130299891
- Publication date Nov 14, 2013
- Thilo Scheiper
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...
- Publication number 20130252409
- Publication date Sep 26, 2013
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES AND E...
- Publication number 20130240988
- Publication date Sep 19, 2013
- GLOBALFOUNDRIES INC.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...
- Publication number 20120256240
- Publication date Oct 11, 2012
- Advanced Micro Devices, Inc.
- UWE GRIEBENOW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC TRANSISTOR DEVICES FORMED BY ASYMMETRIC SPACERS AND TILT...
- Publication number 20120171830
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Semiconductor Device Comprising a Protection Layer for R...
- Publication number 20120091535
- Publication date Apr 19, 2012
- GLOBALFOUNDRIES INC.
- Kai FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors Comprising High-K Metal Gate Electrode Structures and E...
- Publication number 20120025266
- Publication date Feb 2, 2012
- GLOBALFOUNDRIES INC.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Stacked Die Configuration Includi...
- Publication number 20110291269
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Uwe Griebenow
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Stress Memorization with Reduced Fringing Capacitance Based on Sili...
- Publication number 20110269278
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Metal Gates and Semiconductor Resis...
- Publication number 20110266633
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...
- Publication number 20110223732
- Publication date Sep 15, 2011
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for Enhancing Transistor Performance by Transistor Specif...
- Publication number 20110215415
- Publication date Sep 8, 2011
- GLOBALFOUNDRIES INC.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES AND A...
- Publication number 20110210398
- Publication date Sep 1, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS FOR A FLASH MEMORY COMPRISING A SELF-ALIGN...
- Publication number 20110211394
- Publication date Sep 1, 2011
- Thilo Scheiper
- G11 - INFORMATION STORAGE
Information Patent Application
STRAIN MEMORIZATION IN STRAINED SOI SUBSTRATES OF SEMICONDUCTOR DEV...
- Publication number 20110210427
- Publication date Sep 1, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT BARS WITH REDUCED FRINGING CAPACITANCE IN A SEMICONDUCTOR D...
- Publication number 20110210380
- Publication date Sep 1, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Comprising a Buried High-K Metal Gate Electrode Structure
- Publication number 20110210389
- Publication date Sep 1, 2011
- GLOBALFOUNDRIES INC.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...
- Publication number 20110201165
- Publication date Aug 18, 2011
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE APPROACH BASED ON A REVERSE OFFSET SPACER APPLIED...
- Publication number 20110186915
- Publication date Aug 4, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED INTEGRITY OF A HIGH-K METAL GATE ELECTRODE STRUCTURE BY US...
- Publication number 20110159657
- Publication date Jun 30, 2011
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CONFINEMENT OF SENSITIVE MATERIALS OF A HIGH-K METAL GATE...
- Publication number 20110156099
- Publication date Jun 30, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREDOPED SEMICONDUCTOR MATERIAL FOR A HIGH-K METAL GATE ELECTRODE S...
- Publication number 20110156153
- Publication date Jun 30, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS...
- Publication number 20110156154
- Publication date Jun 30, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...
- Publication number 20110127617
- Publication date Jun 2, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING THE SERIES RESISTANCE IN SOPHISTICATED TRANSISTORS BY EMBE...
- Publication number 20110127614
- Publication date Jun 2, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENGINEERING IN THREE-DIMENSIONAL TRANSISTORS BASED ON GLOBAL...
- Publication number 20110101456
- Publication date May 5, 2011
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR INCLUDING A HIGH-K METAL GATE ELECTRODE STRUCTURE FORMED...
- Publication number 20110101427
- Publication date May 5, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A BURIED WAVEGUIDE FOR DEVICE INTER...
- Publication number 20110076028
- Publication date Mar 31, 2011
- Uwe Griebenow
- G02 - OPTICS
Information Patent Application
OPTICAL SIGNAL TRANSFER IN A SEMICONDUCTOR DEVICE BY USING MONOLITH...
- Publication number 20110073875
- Publication date Mar 31, 2011
- Uwe Griebenow
- G02 - OPTICS

Uwe Griebenow

Person

Patents Grantslast 30 patents

Semiconductor device comprising a stacked die configuration includi...

Contact bars with reduced fringing capacitance in a semiconductor d...

Field effect transistors for a flash memory comprising a self-align...

High-K gate electrode structure formed after transistor fabrication...

Transistors comprising high-K metal gate electrode structures and e...

Semiconductor device comprising a stacked die configuration includi...

Enhanced confinement of sensitive materials of a high-K metal gate...

Method for increasing penetration depth of drain and source implant...

Method for forming a transistor with recessed drain and source area...

High-K metal gate electrode structures formed at different process...

Semiconductor device comprising a buried waveguide for device inter...

Asymmetric transistor devices formed by asymmetric spacers and tilt...

Technique for enhancing transistor performance by transistor specif...

Predoped semiconductor material for a high-K metal gate electrode s...

Field effect transistors for a flash memory comprising a self-align...

Optical signal transfer in a semiconductor device by using monolith...

High-K gate electrode structure formed after transistor fabrication...

Transistors comprising high-K metal gate electrode structures and e...

Semiconductor device comprising metal gates and semiconductor resis...

Threshold adjustment for MOS devices by adapting a spacer width pri...

Stress adjustment in stressed dielectric materials of semiconductor...

Stress memorization with reduced fringing capacitance based on sili...

Replacement gate approach based on a reverse offset spacer applied...

Method for adjusting the height of a gate electrode in a semiconduc...

Double deposition of a stress-inducing layer in an interlayer diele...

Increased depth of drain and source regions in complementary transi...

Strain memorization in strained SOI substrates of semiconductor dev...

Reduced silicon thickness of N-channel transistors in SOI CMOS devices

Performance enhancement in transistors comprising high-k metal gate...

In situ formed drain and source regions including a strain-inducing...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE COMPRISING A STACKED DIE CONFIGURATION INCLUDI...

FIELD EFFECT TRANSISTORS FOR A FLASH MEMORY COMPRISING A SELF-ALIGN...

HIGH-K GATE ELECTRODE STRUCTURE FORMED AFTER TRANSISTOR FABRICATION...

TRANSISTORS COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES AND E...

METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...

ASYMMETRIC TRANSISTOR DEVICES FORMED BY ASYMMETRIC SPACERS AND TILT...

Method and Semiconductor Device Comprising a Protection Layer for R...

Transistors Comprising High-K Metal Gate Electrode Structures and E...

Semiconductor Device Comprising a Stacked Die Configuration Includi...

Stress Memorization with Reduced Fringing Capacitance Based on Sili...

Semiconductor Device Comprising Metal Gates and Semiconductor Resis...

THRESHOLD ADJUSTMENT FOR MOS DEVICES BY ADAPTING A SPACER WIDTH PRI...

Technique for Enhancing Transistor Performance by Transistor Specif...

TRANSISTORS COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES AND A...

FIELD EFFECT TRANSISTORS FOR A FLASH MEMORY COMPRISING A SELF-ALIGN...

STRAIN MEMORIZATION IN STRAINED SOI SUBSTRATES OF SEMICONDUCTOR DEV...

CONTACT BARS WITH REDUCED FRINGING CAPACITANCE IN A SEMICONDUCTOR D...

Transistor Comprising a Buried High-K Metal Gate Electrode Structure

CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...

REPLACEMENT GATE APPROACH BASED ON A REVERSE OFFSET SPACER APPLIED...

ENHANCED INTEGRITY OF A HIGH-K METAL GATE ELECTRODE STRUCTURE BY US...

ENHANCED CONFINEMENT OF SENSITIVE MATERIALS OF A HIGH-K METAL GATE...

PREDOPED SEMICONDUCTOR MATERIAL FOR A HIGH-K METAL GATE ELECTRODE S...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS...

PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...

REDUCING THE SERIES RESISTANCE IN SOPHISTICATED TRANSISTORS BY EMBE...

STRAIN ENGINEERING IN THREE-DIMENSIONAL TRANSISTORS BASED ON GLOBAL...

TRANSISTOR INCLUDING A HIGH-K METAL GATE ELECTRODE STRUCTURE FORMED...

SEMICONDUCTOR DEVICE COMPRISING A BURIED WAVEGUIDE FOR DEVICE INTER...

OPTICAL SIGNAL TRANSFER IN A SEMICONDUCTOR DEVICE BY USING MONOLITH...