Uzma RANA

Person

Slingerlands, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 12,142,686
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer in bulk substrate...
- Patent number 12,119,352
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 12,027,582
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk wafer switch isolation
- Patent number 11,823,948
- Issue date Nov 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with air gap under raised source/drain region in bulk se...
- Patent number 11,817,479
- Issue date Nov 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with shallow trench isolation features with...
- Patent number 11,764,225
- Issue date Sep 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded isolation layer in bulk substrate
- Patent number 11,749,717
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer under trench isol...
- Patent number 11,677,000
- Issue date Jun 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with air gap under source/drain region in bulk semicondu...
- Patent number 11,605,710
- Issue date Mar 14, 2023
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded isolation layer in bulk substrate
- Patent number 11,380,759
- Issue date Jul 5, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk wafer switch isolation
- Patent number 11,322,387
- Issue date May 3, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma Rana
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES
- Publication number 20240429277
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20230378183
- Publication date Nov 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...
- Publication number 20230215869
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230114096
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...
- Publication number 20230108712
- Publication date Apr 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...
- Publication number 20230096544
- Publication date Mar 30, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...
- Publication number 20220399372
- Publication date Dec 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20220384659
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. STAMPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE
- Publication number 20220262900
- Publication date Aug 18, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...
- Publication number 20220254774
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK WAFER SWITCH ISOLATION
- Publication number 20220208599
- Publication date Jun 30, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AIR GAP UNDER SOURCE/DRAIN REGION IN BULK SEMICONDU...
- Publication number 20220190108
- Publication date Jun 16, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK WAFER SWITCH ISOLATION
- Publication number 20220115262
- Publication date Apr 14, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE
- Publication number 20220028971
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma RANA
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Field effect transistor

IC structure including porous semiconductor layer in bulk substrate...

IC structure including porous semiconductor layer under trench isol...

Bulk wafer switch isolation

Transistor with air gap under raised source/drain region in bulk se...

Field effect transistor with shallow trench isolation features with...

Transistor with embedded isolation layer in bulk substrate

IC structure including porous semiconductor layer under trench isol...

Transistor with air gap under source/drain region in bulk semicondu...

Integrated circuit structure and method for bipolar transistor stac...

Transistor with embedded isolation layer in bulk substrate

Bulk wafer switch isolation

Patents Applicationslast 30 patents

MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER IN BULK SUBSTRATE...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

IC STRUCTURE INCLUDING POROUS SEMICONDUCTOR LAYER UNDER TRENCH ISOL...

TRANSISTOR WITH AIR GAP UNDER RAISED SOURCE/DRAIN REGION IN BULK SE...

FIELD EFFECT TRANSISTOR WITH SHALLOW TRENCH ISOLATION FEATURES WITH...

FIELD EFFECT TRANSISTOR

TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...

BULK WAFER SWITCH ISOLATION

TRANSISTOR WITH AIR GAP UNDER SOURCE/DRAIN REGION IN BULK SEMICONDU...

BULK WAFER SWITCH ISOLATION

TRANSISTOR WITH EMBEDDED ISOLATION LAYER IN BULK SUBSTRATE