Valeri F. Tsvetkov

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reduced optical absorption for silicon carbide crystalline materials
- Patent number 12,024,794
- Issue date Jul 2, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation distribution for silicon carbide crystalline materials
- Patent number 11,519,098
- Issue date Dec 6, 2022
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing high quality silicon carbide crystal in a seede...
- Patent number 9,790,619
- Issue date Oct 17, 2017
- Cree, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing high quality bulk silicon carbide single crystal by manag...
- Patent number 9,200,381
- Issue date Dec 1, 2015
- Cree, Inc.
- Robert Tyler Leonard
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 9,099,377
- Issue date Aug 4, 2015
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 9,059,118
- Issue date Jun 16, 2015
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,785,946
- Issue date Jul 22, 2014
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,624,267
- Issue date Jan 7, 2014
- Cree, Inc.
- Adrian Powell
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 8,618,553
- Issue date Dec 31, 2013
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Micropipe-free silicon carbide and related method of manufacture
- Patent number 8,410,488
- Issue date Apr 2, 2013
- Cree, Inc.
- Cem Basceri
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,384,090
- Issue date Feb 26, 2013
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Halogen assisted physical vapor transport method for silicon carbid...
- Patent number 8,163,086
- Issue date Apr 24, 2012
- Cree, Inc.
- Stephan G. Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,943,954
- Issue date May 17, 2011
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 7,811,943
- Issue date Oct 12, 2010
- Cree, Inc.
- Calvin H. Carter, Jr.
- C30 - CRYSTAL GROWTH
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,592,634
- Issue date Sep 22, 2009
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing high quality large size silicon carbide crystals
- Patent number 7,563,321
- Issue date Jul 21, 2009
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for the production of silicon carbide crystals
- Patent number 7,387,680
- Issue date Jun 17, 2008
- Cree, Inc.
- Valeri F. Tsvetkov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,364,617
- Issue date Apr 29, 2008
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,351,286
- Issue date Apr 1, 2008
- Cree, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED fabrication via ion implant isolation
- Patent number 7,338,822
- Issue date Mar 4, 2008
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,323,051
- Issue date Jan 29, 2008
- Cree, Inc.
- Hudson M. Hobgood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for the production of bulk silicon carbide sin...
- Patent number 7,323,052
- Issue date Jan 29, 2008
- Cree, Inc.
- Valeri F. Tsvetkov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low 1c screw dislocation 3 inch silicon carbide wafer
- Patent number 7,314,520
- Issue date Jan 1, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of subsurface damage in the production of bulk SiC crystals
- Patent number 7,300,519
- Issue date Nov 27, 2007
- Cree, Inc.
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low basal plane dislocation bulk grown SiC wafers
- Patent number 7,294,324
- Issue date Nov 13, 2007
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing nitrogen content in silicon carbide crystals by sublimatio...
- Patent number 7,220,313
- Issue date May 22, 2007
- Cree, Inc.
- George J. Fechko, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Seed and seedholder combinations for high quality growth of large s...
- Patent number 7,192,482
- Issue date Mar 20, 2007
- Cree, Inc.
- Stephan Mueller
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20240344239
- Publication date Oct 17, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20220403552
- Publication date Dec 22, 2022
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20220189768
- Publication date Jun 16, 2022
- Cree, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
DISLOCATION DISTRIBUTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20210230769
- Publication date Jul 29, 2021
- Cree, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20210198804
- Publication date Jul 1, 2021
- Cree, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20130181231
- Publication date Jul 18, 2013
- Cree, Inc.
- CEM BASCERI
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER
- Publication number 20130161651
- Publication date Jun 27, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBID...
- Publication number 20120167825
- Publication date Jul 5, 2012
- Stephan G. Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110290174
- Publication date Dec 1, 2011
- NAVY, SECRETARY OF THE, UNITED STATES OF AMERICA
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...
- Publication number 20100320477
- Publication date Dec 23, 2010
- Cree, Inc.
- Calvin H. Carter, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
LED Fabrication via Ion Implant Isolation
- Publication number 20090309124
- Publication date Dec 17, 2009
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Semi-Insulating Resistivity in High Purity Sil...
- Publication number 20090256162
- Publication date Oct 15, 2009
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Halogen Assisted Physical Vapor Transport Method for Silicon Carbid...
- Publication number 20090056619
- Publication date Mar 5, 2009
- Stephan G. Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
- Publication number 20080169476
- Publication date Jul 17, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080083366
- Publication date Apr 10, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
- Publication number 20080067524
- Publication date Mar 20, 2008
- Cree, Inc.
- Cem Basceri
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...
- Publication number 20070283880
- Publication date Dec 13, 2007
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20070240633
- Publication date Oct 18, 2007
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide water
- Publication number 20070240630
- Publication date Oct 18, 2007
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed and Seedholder Combinations for High Quality Growth of Large S...
- Publication number 20070157874
- Publication date Jul 12, 2007
- Stephan Mueller
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for the production of silicon carbide crystals
- Publication number 20060254505
- Publication date Nov 16, 2006
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing silicon carbide crystals having increased min...
- Publication number 20060130742
- Publication date Jun 22, 2006
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing high quality large size silicon carbide crystals
- Publication number 20060118037
- Publication date Jun 8, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20060107890
- Publication date May 25, 2006
- Hudson McDonald Hobgood
- C30 - CRYSTAL GROWTH
Information Patent Application
LED fabrication via ion implant isolation
- Publication number 20060108595
- Publication date May 25, 2006
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of subsurface damage in the production of bulk SiC crystals
- Publication number 20060102068
- Publication date May 18, 2006
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Low basal plane dislocation bulk grown SiC wafers
- Publication number 20060075958
- Publication date Apr 13, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH

Valeri F. Tsvetkov

Person

Patents Grantslast 30 patents

Large diameter silicon carbide wafers

Reduced optical absorption for silicon carbide crystalline materials

Dislocation distribution for silicon carbide crystalline materials

Method of producing high quality silicon carbide crystal in a seede...

Producing high quality bulk silicon carbide single crystal by manag...

Micropipe-free silicon carbide and related method of manufacture

Method for producing semi-insulating resistivity in high purity sil...

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Process for producing silicon carbide crystals having increased min...

Micropipe-free silicon carbide and related method of manufacture

Low 1C screw dislocation 3 inch silicon carbide wafer

Halogen assisted physical vapor transport method for silicon carbid...

One hundred millimeter single crystal silicon carbide wafer

LED fabrication via ion implant isolation

Process for producing silicon carbide crystals having increased min...

LED fabrication via ion implant isolation

Process for producing high quality large size silicon carbide crystals

Method and apparatus for the production of silicon carbide crystals

Seed and seedholder combinations for high quality growth of large s...

One hundred millimeter single crystal silicon carbide wafer

LED fabrication via ion implant isolation

One hundred millimeter single crystal silicon carbide wafer

Apparatus and method for the production of bulk silicon carbide sin...

Seeded single crystal silicon carbide growth and resulting crystals

Low 1c screw dislocation 3 inch silicon carbide wafer

Reduction of subsurface damage in the production of bulk SiC crystals

Low basal plane dislocation bulk grown SiC wafers

Reducing nitrogen content in silicon carbide crystals by sublimatio...

Seed and seedholder combinations for high quality growth of large s...

Patents Applicationslast 30 patents

LARGE DIAMETER SILICON CARBIDE WAFERS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

DISLOCATION DISTRIBUTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

LARGE DIAMETER SILICON CARBIDE WAFERS

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER

HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBID...

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...

LED Fabrication via Ion Implant Isolation

Method for Producing Semi-Insulating Resistivity in High Purity Sil...

Halogen Assisted Physical Vapor Transport Method for Silicon Carbid...

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE

APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...

One hundred millimeter single crystal silicon carbide wafer

One hundred millimeter single crystal silicon carbide water

Seed and Seedholder Combinations for High Quality Growth of Large S...

Method and apparatus for the production of silicon carbide crystals

Seeded single crystal silicon carbide growth and resulting crystals

Process for producing silicon carbide crystals having increased min...

Process for producing high quality large size silicon carbide crystals

One hundred millimeter single crystal silicon carbide wafer

LED fabrication via ion implant isolation

Reduction of subsurface damage in the production of bulk SiC crystals

Low basal plane dislocation bulk grown SiC wafers