Vance H. Adams

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including an active region and two layers havi...
- Patent number 9,847,389
- Issue date Dec 19, 2017
- NXP USA, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an active region and two layers havi...
- Patent number 8,569,858
- Issue date Oct 29, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor structure having an active...
- Patent number 7,714,318
- Issue date May 11, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process integrating source/drain stressors and interl...
- Patent number 7,538,002
- Issue date May 26, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a transistor structure having an active...
- Patent number 7,420,202
- Issue date Sep 2, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of different layers and met...
- Patent number 7,271,069
- Issue date Sep 18, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process employing stress inducing source...
- Patent number 7,238,580
- Issue date Jul 3, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for regional stress control
- Patent number 7,205,202
- Issue date Apr 17, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for performance enhancement in an asymmetrical...
- Patent number 7,166,897
- Issue date Jan 23, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with stress modification and capacitive reduct...
- Patent number 7,161,199
- Issue date Jan 9, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with multiple spacer insulating region widths
- Patent number 7,064,396
- Issue date Jun 20, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separately strained N-channel and P-channel transistors
- Patent number 7,041,576
- Issue date May 9, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Scott K. Pozder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...
- Publication number 20140054704
- Publication date Feb 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING AN ACTIVE...
- Publication number 20080296633
- Publication date Dec 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING TENSILE AND COMPRESSIVE REGIONS
- Publication number 20080150072
- Publication date Jun 26, 2008
- Brian A. Winstead
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a semiconductor layer and a sidewall sp...
- Publication number 20070249127
- Publication date Oct 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Rode R. Mora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor process integrating source/drain stressors and interl...
- Publication number 20070202651
- Publication date Aug 30, 2007
- Freescale Semiconductor, Inc.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REGIONAL STRESS CONTROL
- Publication number 20070148894
- Publication date Jun 28, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a transistor structure having an active...
- Publication number 20070102755
- Publication date May 10, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Vance H. Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a plurality of different layers and met...
- Publication number 20060240650
- Publication date Oct 26, 2006
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for regional stress control
- Publication number 20060240609
- Publication date Oct 26, 2006
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor fabrication process employing stress inducing source...
- Publication number 20060166492
- Publication date Jul 27, 2006
- Freescale Semiconductor, Inc.
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure with stress modification and capacitive reduct...
- Publication number 20060043422
- Publication date Mar 2, 2006
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for performance enhancement in an asymmetrical...
- Publication number 20060043498
- Publication date Mar 2, 2006
- Marius K. Orlowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure with stress modification and capacitive reduct...
- Publication number 20060043500
- Publication date Mar 2, 2006
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with multiple spacer insulating region widths
- Publication number 20060011988
- Publication date Jan 19, 2006
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Separately strained N-channel and P-channel transistors
- Publication number 20050275017
- Publication date Dec 15, 2005
- Scott K. Pozder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit with multiple spacer insulating region widths
- Publication number 20050190421
- Publication date Sep 1, 2005
- Jian Chen
- H01 - BASIC ELECTRIC ELEMENTS

Vance H. Adams

Person

Patents Grantslast 30 patents

Semiconductor device including an active region and two layers havi...

Semiconductor device including an active region and two layers havi...

Electronic device including a transistor structure having an active...

Semiconductor process integrating source/drain stressors and interl...

Electronic device including a transistor structure having an active...

Semiconductor device having a plurality of different layers and met...

Semiconductor fabrication process employing stress inducing source...

Semiconductor device and method for regional stress control

Method and apparatus for performance enhancement in an asymmetrical...

Transistor structure with stress modification and capacitive reduct...

Integrated circuit with multiple spacer insulating region widths

Separately strained N-channel and P-channel transistors

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVI...

ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING AN ACTIVE...

INTEGRATED CIRCUIT HAVING TENSILE AND COMPRESSIVE REGIONS

Electronic device including a semiconductor layer and a sidewall sp...

Semiconductor process integrating source/drain stressors and interl...

SEMICONDUCTOR DEVICE AND METHOD FOR REGIONAL STRESS CONTROL

Electronic device including a transistor structure having an active...

Semiconductor device having a plurality of different layers and met...

Semiconductor device and method for regional stress control

Semiconductor fabrication process employing stress inducing source...

Transistor structure with stress modification and capacitive reduct...

Method and apparatus for performance enhancement in an asymmetrical...

Transistor structure with stress modification and capacitive reduct...

Integrated circuit with multiple spacer insulating region widths

Separately strained N-channel and P-channel transistors

Integrated circuit with multiple spacer insulating region widths