Varatharajan Rengarajan

Person

Pine Brook, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method for preparing an aluminum doped silicon carbide crystal by p...
- Patent number 12,006,591
- Issue date Jun 11, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,905,618
- Issue date Feb 20, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,035,054
- Issue date Jun 15, 2021
- II-VI DELAWARE, INC.
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number RE48378
- Issue date Jan 5, 2021
- II-VI DELAWARE, INC.
- Ilya Zwieback
Information Patent Grant
High quality silicon carbide crystals and method of making the same
- Patent number 10,793,972
- Issue date Oct 6, 2020
- II-VI DELAWARE, INC.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for silicon carbide crystal growth by reacting elemental sil...
- Patent number 9,580,837
- Issue date Feb 28, 2017
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number RE46315
- Issue date Feb 21, 2017
- II-VI Incorporated
- Ilya Zwieback
Information Patent Grant
Axial gradient transport growth process and apparatus utilizing res...
- Patent number 9,228,274
- Issue date Jan 5, 2016
- II-VI Incorporated
- Varatharajan Rengarajan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vanadium compensated, SI SiC single crystals of NU and PI type and...
- Patent number 9,090,989
- Issue date Jul 28, 2015
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter, high quality SiC single crystals, method and apparatus
- Patent number 8,741,413
- Issue date Jun 3, 2014
- II-VI Incorporated
- Ilya Zwieback
- B28 - WORKING CEMENT, CLAY, OR STONE

Patents Applicationslast 30 patents

Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20240150931
- Publication date May 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping XU
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE
- Publication number 20220049373
- Publication date Feb 17, 2022
- II-VI Delaware, Inc.
- Ilya Zwieback
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20210269938
- Publication date Sep 2, 2021
- II-VI Delaware, Inc.
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME
- Publication number 20210269937
- Publication date Sep 2, 2021
- II-VI Delaware, Inc.
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20210189591
- Publication date Jun 24, 2021
- II-VI Delaware, Inc.
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...
- Publication number 20190323145
- Publication date Oct 24, 2019
- II-VI Incorporated
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...
- Publication number 20170321345
- Publication date Nov 9, 2017
- II-VI Incorporated
- Xueping Xu
- C30 - CRYSTAL GROWTH
Information Patent Application
Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizi...
- Publication number 20160097143
- Publication date Apr 7, 2016
- II-VI Incorporated
- Varatharajan Rengarajan
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport
- Publication number 20160060789
- Publication date Mar 3, 2016
- II-VI Incorporated
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...
- Publication number 20130320275
- Publication date Dec 5, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
- Publication number 20130280466
- Publication date Oct 24, 2013
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS
- Publication number 20120285370
- Publication date Nov 15, 2012
- II-VI Incorporated
- Avinash K. Gupta
- C30 - CRYSTAL GROWTH
Information Patent Application
Axial Gradient Transport Growth Process and Apparatus Utilizing Res...
- Publication number 20100139552
- Publication date Jun 10, 2010
- II-IV INCORPORATED
- Varatharajan Rengarajan
- C30 - CRYSTAL GROWTH

Varatharajan Rengarajan

Person

Patents Grantslast 30 patents

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Method for preparing an aluminum doped silicon carbide crystal by p...

Large diameter silicon carbide single crystals and apparatus and me...

Large diameter silicon carbide single crystals and apparatus and me...

Vanadium compensated, SI SiC single crystals of NU and PI type and...

High quality silicon carbide crystals and method of making the same

Method for silicon carbide crystal growth by reacting elemental sil...

Large diameter, high quality SiC single crystals, method and apparatus

Axial gradient transport growth process and apparatus utilizing res...

Vanadium compensated, SI SiC single crystals of NU and PI type and...

Large diameter, high quality SiC single crystals, method and apparatus

Patents Applicationslast 30 patents

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...

Large Diameter Silicon Carbide Single Crystals and Apparatus and Me...

Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizi...

Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport

Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and...

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS

Axial Gradient Transport Growth Process and Apparatus Utilizing Res...