Vassil Antonov

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical transistors having at least 50% grain boundaries offset be...
- Patent number 12,191,354
- Issue date Jan 7, 2025
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor, integrated circuitry, method of forming a vert...
- Patent number 11,871,582
- Issue date Jan 9, 2024
- Micron Technology, Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, a ferroelectric memory cell, an array of f...
- Patent number 11,825,662
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Clement Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors with channel region having vertically elongate...
- Patent number 11,417,730
- Issue date Aug 16, 2022
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped titanium nitride materials for DRAM capacitors, and related s...
- Patent number 11,289,487
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor, integrated circuitry, method of forming a vert...
- Patent number 11,264,395
- Issue date Mar 1, 2022
- Micron Technology, Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor, a ferroelectric memory cell, an array of f...
- Patent number 11,101,274
- Issue date Aug 24, 2021
- Micron Technology, Inc.
- Clement Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and methods of forming transistors
- Patent number 10,923,593
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods used in forming at least a portion of at least one conducti...
- Patent number 10,553,673
- Issue date Feb 4, 2020
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constructions comprising rutile-type titanium oxide; and methods of...
- Patent number 10,008,381
- Issue date Jun 26, 2018
- Micron Technology, Inc.
- Nik Mirin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods of forming capacitors
- Patent number 9,887,083
- Issue date Feb 6, 2018
- Micron Technology, Inc.
- Vassil N. Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including molybdenum nitride, molybdenum o...
- Patent number 9,466,660
- Issue date Oct 11, 2016
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-material structures and capacitor-containing semiconductor co...
- Patent number 9,236,427
- Issue date Jan 12, 2016
- Micron Technology, Inc.
- Joseph Neil Greeley
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Constructions comprising thermally conductive stacks containing rut...
- Patent number 9,209,013
- Issue date Dec 8, 2015
- Micron Technology, Inc.
- Nik Mirin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming capacitors
- Patent number 9,159,551
- Issue date Oct 13, 2015
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors and semiconductor devices including a...
- Patent number 9,159,731
- Issue date Oct 13, 2015
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulative elements
- Patent number 8,940,388
- Issue date Jan 27, 2015
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors and semiconductor devices including a...
- Patent number 8,936,991
- Issue date Jan 20, 2015
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming rutile titanium dioxide
- Patent number 8,927,441
- Issue date Jan 6, 2015
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a ruthenium material, methods of forming a capac...
- Patent number 8,900,992
- Issue date Dec 2, 2014
- Micron Technology, Inc.
- Vishwanath Bhat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming capacitors
- Patent number 8,865,544
- Issue date Oct 21, 2014
- Micron Technology, Inc.
- Joseph Neil Greeley
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Capacitor structure with metal bilayer and method for using the same
- Patent number 8,841,747
- Issue date Sep 23, 2014
- Nanya Technology Corp.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors and semiconductor devices including a...
- Patent number 8,748,283
- Issue date Jun 10, 2014
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming rutile titanium oxide and the stacking structure...
- Patent number 8,659,869
- Issue date Feb 25, 2014
- Nanya Technology Corporation
- Chun I Hsieh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming rutile titanium dioxide and associated methods o...
- Patent number 8,609,553
- Issue date Dec 17, 2013
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors including a rutile titanium dioxide material and semicon...
- Patent number 8,564,095
- Issue date Oct 22, 2013
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capacitors
- Patent number 8,528,175
- Issue date Sep 10, 2013
- Micron Technology, Inc.
- Vassil Antonov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming and utilizing rutile-type titanium oxide
- Patent number 8,518,486
- Issue date Aug 27, 2013
- Micron Technology, Inc.
- Nik Mirin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor devices including a ruthenium film
- Patent number 8,513,807
- Issue date Aug 20, 2013
- Micron Technology, Inc.
- Vishwanath Bhat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit devices having a strontium ruthenium oxide inter...
- Patent number 8,399,952
- Issue date Mar 19, 2013
- Micron Technology, Inc.
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...
- Publication number 20240164114
- Publication date May 16, 2024
- Micron Technology, Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor And Methods Of Forming Transistors
- Publication number 20220344468
- Publication date Oct 27, 2022
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20220208767
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...
- Publication number 20220157837
- Publication date May 19, 2022
- Micron Technology, Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...
- Publication number 20220093617
- Publication date Mar 24, 2022
- Micron Technology, Inc.
- Hung-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of F...
- Publication number 20210343732
- Publication date Nov 4, 2021
- Micron Technology, Inc.
- Clement Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of F...
- Publication number 20210175239
- Publication date Jun 10, 2021
- Micron Technology, Inc.
- Clement Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor And Methods Of Forming Transistors
- Publication number 20210043731
- Publication date Feb 11, 2021
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor And Methods Of Forming Transistors
- Publication number 20210043768
- Publication date Feb 11, 2021
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20190267383
- Publication date Aug 29, 2019
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Used In Forming At Least A Portion Of At Least One Conducti...
- Publication number 20190198606
- Publication date Jun 27, 2019
- Micron Technology, Inc.
- Manuj Nahar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Constructions Comprising Rutile-Type Titanium Oxide; And Methods of...
- Publication number 20160056038
- Publication date Feb 25, 2016
- Micron Technology, Inc.
- Nik Mirin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Capacitors
- Publication number 20160027642
- Publication date Jan 28, 2016
- Micron Technology, Inc.
- Vassil N. Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors and Methods of Forming Capacitors
- Publication number 20150194478
- Publication date Jul 9, 2015
- Micron Technology, Inc.
- Vassil N. Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INSULATIVE ELEMENTS
- Publication number 20150140773
- Publication date May 21, 2015
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM O...
- Publication number 20150102460
- Publication date Apr 16, 2015
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...
- Publication number 20150093874
- Publication date Apr 2, 2015
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Material Structures, Semiconductor Constructions and Methods...
- Publication number 20150054127
- Publication date Feb 26, 2015
- Micron Technology, Inc.
- Joseph Neil Greeley
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR USING METAL BILAYER
- Publication number 20140349461
- Publication date Nov 27, 2014
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...
- Publication number 20140210049
- Publication date Jul 31, 2014
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING RUTILE TITANIUM DIOXIDE
- Publication number 20140065301
- Publication date Mar 6, 2014
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Material Structures, Semiconductor Constructions and Methods...
- Publication number 20140015097
- Publication date Jan 16, 2014
- Micron Technology, Inc.
- Joseph Neil Greeley
- B82 - NANO-TECHNOLOGY
Information Patent Application
Constructions Comprising Rutile-Type Titanium Oxide; And Methods of...
- Publication number 20130316153
- Publication date Nov 28, 2013
- Micron Technology, Inc.
- Nik Mirin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF FORMING A RUTHENIUM MATERIAL, METHODS OF FORMING A CAPAC...
- Publication number 20130307120
- Publication date Nov 21, 2013
- Micron Technology, Inc.
- Vishwanath Bhat
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...
- Publication number 20130260529
- Publication date Oct 3, 2013
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING RUTILE TITANIUM OXIDE AND THE STACKING STRUCTURE...
- Publication number 20130182367
- Publication date Jul 18, 2013
- Nan Ya Technology Corporation
- Chun I HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME
- Publication number 20120267757
- Publication date Oct 25, 2012
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20120241865
- Publication date Sep 27, 2012
- NANYA TECHNOLOGY CORPORATION
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATIVE ELEMENTS AND METHODS OF FORMING THE SAME
- Publication number 20120225268
- Publication date Sep 6, 2012
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS O...
- Publication number 20120202356
- Publication date Aug 9, 2012
- Micron Technology, Inc.
- Tsai-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS

Vassil Antonov

Person

Patents Grantslast 30 patents

Vertical transistors having at least 50% grain boundaries offset be...

Vertical transistor, integrated circuitry, method of forming a vert...

Ferroelectric capacitor, a ferroelectric memory cell, an array of f...

Vertical transistors with channel region having vertically elongate...

Doped titanium nitride materials for DRAM capacitors, and related s...

Vertical transistor, integrated circuitry, method of forming a vert...

Ferroelectric capacitor, a ferroelectric memory cell, an array of f...

Transistor and methods of forming transistors

Methods used in forming at least a portion of at least one conducti...

Constructions comprising rutile-type titanium oxide; and methods of...

Methods of forming capacitors

Semiconductor structures including molybdenum nitride, molybdenum o...

Multi-material structures and capacitor-containing semiconductor co...

Constructions comprising thermally conductive stacks containing rut...

Methods of forming capacitors

Methods of forming capacitors and semiconductor devices including a...

Insulative elements

Methods of forming capacitors and semiconductor devices including a...

Methods of forming rutile titanium dioxide

Methods of forming a ruthenium material, methods of forming a capac...

Methods of forming capacitors

Capacitor structure with metal bilayer and method for using the same

Methods of forming capacitors and semiconductor devices including a...

Method for forming rutile titanium oxide and the stacking structure...

Methods of forming rutile titanium dioxide and associated methods o...

Capacitors including a rutile titanium dioxide material and semicon...

Methods of forming capacitors

Methods of forming and utilizing rutile-type titanium oxide

Semiconductor devices including a ruthenium film

Integrated circuit devices having a strontium ruthenium oxide inter...

Patents Applicationslast 30 patents

Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...

Transistor And Methods Of Forming Transistors

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...

Vertical Transistor, Integrated Circuitry, Method Of Forming A Vert...

Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of F...

Ferroelectric Capacitor, A Ferroelectric Memory Cell, An Array Of F...

Transistor And Methods Of Forming Transistors

Transistor And Methods Of Forming Transistors

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

Methods Used In Forming At Least A Portion Of At Least One Conducti...

Constructions Comprising Rutile-Type Titanium Oxide; And Methods of...

Methods of Forming Capacitors

Capacitors and Methods of Forming Capacitors

METHODS OF FORMING INSULATIVE ELEMENTS

SEMICONDUCTOR STRUCTURES INCLUDING MOLYBDENUM NITRIDE, MOLYBDENUM O...

METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...

Multi-Material Structures, Semiconductor Constructions and Methods...

METHOD FOR USING METAL BILAYER

METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...

METHODS OF FORMING RUTILE TITANIUM DIOXIDE

Multi-Material Structures, Semiconductor Constructions and Methods...

Constructions Comprising Rutile-Type Titanium Oxide; And Methods of...

METHODS OF FORMING A RUTHENIUM MATERIAL, METHODS OF FORMING A CAPAC...

METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A...

METHOD FOR FORMING RUTILE TITANIUM OXIDE AND THE STACKING STRUCTURE...

CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME

INTEGRATED CIRCUIT STRUCTURE

INSULATIVE ELEMENTS AND METHODS OF FORMING THE SAME

METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS O...