Vassilios Papageorgiou

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Graded well implantation for asymmetric transistors having reduced...
- Patent number 9,449,826
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- G Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of semiconductor alloys in PMOS and NMOS transistors by...
- Patent number 9,269,631
- Issue date Feb 23, 2016
- Advance Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting configuration of a multiple gate transistor by controllin...
- Patent number 9,035,306
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement in transistors comprising an embedded strain-ind...
- Patent number 8,969,916
- Issue date Mar 3, 2015
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement in transistors comprising an embedded strain-ind...
- Patent number 8,828,819
- Issue date Sep 9, 2014
- GLOBALFOUNDRIES Inc.
- Stephen Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in PMOS and NMOS transistors on the basis o...
- Patent number 8,772,878
- Issue date Jul 8, 2014
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting of a non-silicon fraction in a semiconductor alloy during...
- Patent number 8,735,253
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element formed in a crystalline substrate material an...
- Patent number 8,664,049
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,530,894
- Issue date Sep 10, 2013
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an embedded strain-inducing material having a gradu...
- Patent number 8,466,520
- Issue date Jun 18, 2013
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting configuration of a multiple gate transistor by controllin...
- Patent number 8,450,124
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement in transistors comprising an embedded strain-ind...
- Patent number 8,357,573
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device comprising an embedded semiconductor alloy having...
- Patent number 8,338,274
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ formed drain and source regions including a strain-inducing...
- Patent number 8,278,174
- Issue date Oct 2, 2012
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 8,227,266
- Issue date Jul 24, 2012
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with an embedded strain-inducing material having a gradu...
- Patent number 8,202,777
- Issue date Jun 19, 2012
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performance enhancement in PMOS and NMOS transistors on the basis o...
- Patent number 8,154,084
- Issue date Apr 10, 2012
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing silicide resistance in silicon/germanium-containing drain/...
- Patent number 8,124,467
- Issue date Feb 28, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation of degradation of performance of semiconductor devices...
- Patent number 8,018,260
- Issue date Sep 13, 2011
- Advanced Micro Devices, Inc.
- Vassilios Papageorgiou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Drive current increase in transistors by asymmetric amorphization i...
- Patent number 7,855,118
- Issue date Dec 21, 2010
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for monitoring process characteristics for forming e...
- Patent number 7,713,763
- Issue date May 11, 2010
- Advanced Micro Devices, Inc.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for determining an operational lifetime of an int...
- Patent number 7,616,021
- Issue date Nov 10, 2009
- Advanced Micro Devices, Inc.
- Vassilios Papageorgiou
- G01 - MEASURING TESTING
Information Patent Grant
System and method for testing packaged devices using time domain re...
- Patent number 7,206,703
- Issue date Apr 17, 2007
- Advanced Micro Devices, Inc.
- Vassilios Papageorgiou
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...
- Publication number 20140339604
- Publication date Nov 20, 2014
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN PMOS AND NMOS TRANSISTORS ON THE BASIS O...
- Publication number 20140264386
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES Inc,
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...
- Publication number 20130306967
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...
- Publication number 20130130449
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...
- Publication number 20120223363
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20120223309
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Enhancement in PMOS and NMOS Transistors on the Basis o...
- Publication number 20120129308
- Publication date May 24, 2012
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...
- Publication number 20100327358
- Publication date Dec 30, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...
- Publication number 20100301421
- Publication date Dec 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...
- Publication number 20100289114
- Publication date Nov 18, 2010
- Stephan KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SILICIDE RESISTANCE IN SILICON/GERMANIUM-CONTAINING DRAIN/...
- Publication number 20100244107
- Publication date Sep 30, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SEMICONDUCTOR ALLOYS IN PMOS AND NMOS TRANSISTORS BY...
- Publication number 20100219475
- Publication date Sep 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF A NON-SILICON FRACTION IN A SEMICONDUCTOR ALLOY DURING...
- Publication number 20100221883
- Publication date Sep 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED WELL IMPLANTATION FOR ASYMMETRIC TRANSISTORS HAVING REDUCED...
- Publication number 20100193866
- Publication date Aug 5, 2010
- G Robert Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU FORMED DRAIN AND SOURCE REGIONS INCLUDING A STRAIN-INDUCING...
- Publication number 20100193882
- Publication date Aug 5, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...
- Publication number 20100164020
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY HAVING...
- Publication number 20100163939
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...
- Publication number 20100164530
- Publication date Jul 1, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20100155727
- Publication date Jun 24, 2010
- Advanced Micro Devices, Inc.
- ANTHONY MOWRY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPENSATION OF DEGRADATION OF PERFORMANCE OF SEMICONDUCTOR DEVICES...
- Publication number 20100134167
- Publication date Jun 3, 2010
- Vassilios Papageorgiou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PERFORMANCE ENHANCEMENT IN PMOS AND NMOS TRANSISTORS ON THE BASIS O...
- Publication number 20100025771
- Publication date Feb 4, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED BORON CONFI...
- Publication number 20100025743
- Publication date Feb 4, 2010
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVE CURRENT INCREASE IN TRANSISTORS BY ASYMMETRIC AMORPHIZATION I...
- Publication number 20090298249
- Publication date Dec 3, 2009
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...
- Publication number 20090166618
- Publication date Jul 2, 2009
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND DEVICE FOR DETERMINING AN OPERATIONAL LIFETIME OF AN INT...
- Publication number 20080174329
- Publication date Jul 24, 2008
- Advanced Micro Devices, Inc.
- Vassilios Papageorgiou
- G01 - MEASURING TESTING

Vassilios Papageorgiou

Person

Patents Grantslast 30 patents

Graded well implantation for asymmetric transistors having reduced...

Integration of semiconductor alloys in PMOS and NMOS transistors by...

Adjusting configuration of a multiple gate transistor by controllin...

Strain enhancement in transistors comprising an embedded strain-ind...

Strain enhancement in transistors comprising an embedded strain-ind...

Performance enhancement in PMOS and NMOS transistors on the basis o...

Adjusting of a non-silicon fraction in a semiconductor alloy during...

Semiconductor element formed in a crystalline substrate material an...

Test structure for monitoring process characteristics for forming e...

Transistor with an embedded strain-inducing material having a gradu...

Adjusting configuration of a multiple gate transistor by controllin...

Strain enhancement in transistors comprising an embedded strain-ind...

Transistor device comprising an embedded semiconductor alloy having...

In situ formed drain and source regions including a strain-inducing...

Test structure for monitoring process characteristics for forming e...

Transistor with an embedded strain-inducing material having a gradu...

Performance enhancement in PMOS and NMOS transistors on the basis o...

Reducing silicide resistance in silicon/germanium-containing drain/...

Compensation of degradation of performance of semiconductor devices...

Drive current increase in transistors by asymmetric amorphization i...

Test structure for monitoring process characteristics for forming e...

Method and device for determining an operational lifetime of an int...

System and method for testing packaged devices using time domain re...

Patents Applicationslast 30 patents

STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...

PERFORMANCE ENHANCEMENT IN PMOS AND NMOS TRANSISTORS ON THE BASIS O...

ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...

STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...

TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

Performance Enhancement in PMOS and NMOS Transistors on the Basis o...

SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...

STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...

SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...

REDUCING SILICIDE RESISTANCE IN SILICON/GERMANIUM-CONTAINING DRAIN/...

INTEGRATION OF SEMICONDUCTOR ALLOYS IN PMOS AND NMOS TRANSISTORS BY...

ADJUSTING OF A NON-SILICON FRACTION IN A SEMICONDUCTOR ALLOY DURING...

GRADED WELL IMPLANTATION FOR ASYMMETRIC TRANSISTORS HAVING REDUCED...

IN SITU FORMED DRAIN AND SOURCE REGIONS INCLUDING A STRAIN-INDUCING...

TRANSISTOR WITH AN EMBEDDED STRAIN-INDUCING MATERIAL HAVING A GRADU...

TRANSISTOR DEVICE COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY HAVING...

ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLIN...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

COMPENSATION OF DEGRADATION OF PERFORMANCE OF SEMICONDUCTOR DEVICES...

PERFORMANCE ENHANCEMENT IN PMOS AND NMOS TRANSISTORS ON THE BASIS O...

TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING ENHANCED BORON CONFI...

DRIVE CURRENT INCREASE IN TRANSISTORS BY ASYMMETRIC AMORPHIZATION I...

TEST STRUCTURE FOR MONITORING PROCESS CHARACTERISTICS FOR FORMING E...

METHOD AND DEVICE FOR DETERMINING AN OPERATIONAL LIFETIME OF AN INT...