Veeraraghavan S. Basker

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement gate cross-couple for static random-access memory scaling
- Patent number 12,324,184
- Issue date Jun 3, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Gate-all-around nanosheet field effect transistor integrated with f...
- Patent number 12,317,555
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Grant
Late replacement bottom isolation for nanosheet devices
- Patent number 12,310,054
- Issue date May 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with bottom dielectric isolation
- Patent number 12,224,312
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around contact process margin improvement with early contact cut
- Patent number 12,100,744
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated nanosheet field effect transistors and floating gate mem...
- Patent number 12,009,435
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual step etch-back inner spacer formation
- Patent number 11,990,508
- Issue date May 21, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick gate oxide device option for nanosheet device
- Patent number 11,955,526
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around monolithic stacked field effect transistors having...
- Patent number 11,894,436
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial self-aligned contact for MOL
- Patent number 11,887,890
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor including symmetrical source/drain extension ju...
- Patent number 11,862,710
- Issue date Jan 2, 2024
- International Business Machines Corporation
- Chun-Chen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain contact cut last process to enable wrap-around-con...
- Patent number 11,757,012
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid diffusion break with EUV gate patterning
- Patent number 11,710,768
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective bilayer inner spacer for nanosheet devices
- Patent number 11,695,057
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with isolated and non-isolated epitaxy regi...
- Patent number 11,688,741
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of gate-all-around FET, FINFET and passive devices o...
- Patent number 11,646,306
- Issue date May 9, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wraparound contact to a buried power rail
- Patent number 11,621,332
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices
- Patent number 11,615,988
- Issue date Mar 28, 2023
- Tessera, LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of trench silicide source or drain contacts without gate...
- Patent number 11,443,982
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Punch through stopper in bulk finFET device
- Patent number 11,404,560
- Issue date Aug 2, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor device with bottom isolation
- Patent number 11,387,319
- Issue date Jul 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective removal of semiconductor fins
- Patent number 11,380,589
- Issue date Jul 5, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 11,355,401
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet semiconductor devices with sigma shaped inner spacer
- Patent number 11,348,999
- Issue date May 31, 2022
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate cross-couple for static random-access memory scaling
- Patent number 11,349,001
- Issue date May 31, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIRECT NITRATION FOR BACKSIDE POWER DELIVER NETWORK ISOLATION MODULE
- Publication number 20250239452
- Publication date Jul 24, 2025
- Applied Materials, Inc.
- Prasad BHOSALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON NITRIDE WITH TREATMENT FOR BACKSIDE POWER DELIVER...
- Publication number 20250240994
- Publication date Jul 24, 2025
- Applied Materials, Inc.
- Kyoung Ha Kim
Information Patent Application
SELF-ALIGNING BACKSIDE GATE CONNECTION
- Publication number 20250218870
- Publication date Jul 3, 2025
- Applied Materials, Inc.
- Ashish PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ENABLING CHEMICAL MECHANICAL POLISHING AND BONDING OF A...
- Publication number 20250183037
- Publication date Jun 5, 2025
- Applied Materials, Inc.
- Maria Gorchichko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL COUPLED WITH P-CHANNEL AND METHODS OF MANUFACTURE
- Publication number 20250142957
- Publication date May 1, 2025
- Applied Materials, Inc.
- Sai Hooi Yeong
Information Patent Application
SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS
- Publication number 20250113577
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Veeraraghavan S. Basker
Information Patent Application
CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THIC...
- Publication number 20250112054
- Publication date Apr 3, 2025
- Applied Materials, Inc.
- Yuriy Shusterman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250063797
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Kyoung Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250040170
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Veeraraghavan S. BASKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FORMATION FOR BACKSIDE POWER DELIVERY APPLICATION
- Publication number 20240379438
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE
- Publication number 20240332388
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Byeong Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER
- Publication number 20240186391
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION
- Publication number 20240113200
- Publication date Apr 4, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES
- Publication number 20240038594
- Publication date Feb 1, 2024
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...
- Publication number 20240006467
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...
- Publication number 20230282722
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED LINERLESS VIAS
- Publication number 20230215800
- Publication date Jul 6, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE
- Publication number 20230197530
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NARROWING SINGLE DIFFUSION BREAK
- Publication number 20230197503
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED DIFFUSION BREAK STRUCTURE
- Publication number 20230197526
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOS...
- Publication number 20230187514
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL IN...
- Publication number 20230187516
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSH...
- Publication number 20230178587
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...
- Publication number 20230178539
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG...
- Publication number 20230178437
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL
- Publication number 20230178621
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING...
- Publication number 20230178620
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR WITH BOTTOM DIELECTRIC ISOL...
- Publication number 20230133545
- Publication date May 4, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HYBRID MIDDLE OF LINE CONTACTS
- Publication number 20230124681
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER
- Publication number 20230110825
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Veeraraghavan S. Basker

Person

Patents Grantslast 30 patents

Replacement gate cross-couple for static random-access memory scaling

Gate-all-around nanosheet field effect transistor integrated with f...

Late replacement bottom isolation for nanosheet devices

Vertical FET replacement gate formation with variable fin pitch

Field effect transistors with bottom dielectric isolation

Electrostatic discharge diode having dielectric isolation layer

Gate-all-around field effect transistor with bottom dielectric isol...

Wrap around contact process margin improvement with early contact cut

Semiconductor structures with backside gate contacts

Integrated nanosheet field effect transistors and floating gate mem...

Dual step etch-back inner spacer formation

Thick gate oxide device option for nanosheet device

Co-integrated logic, electrostatic discharge, and well contact devi...

Gate-all-around monolithic stacked field effect transistors having...

Partial self-aligned contact for MOL

Vertical transistor including symmetrical source/drain extension ju...

Source and drain contact cut last process to enable wrap-around-con...

Hybrid diffusion break with EUV gate patterning

Protective bilayer inner spacer for nanosheet devices

Gate-all-around devices with isolated and non-isolated epitaxy regi...

Co-integration of gate-all-around FET, FINFET and passive devices o...

Wraparound contact to a buried power rail

FinFET devices

Formation of trench silicide source or drain contacts without gate...

Punch through stopper in bulk finFET device

Nanosheet transistor device with bottom isolation

Selective removal of semiconductor fins

Field effect transistor

Nanosheet semiconductor devices with sigma shaped inner spacer

Replacement gate cross-couple for static random-access memory scaling

Patents Applicationslast 30 patents

DIRECT NITRATION FOR BACKSIDE POWER DELIVER NETWORK ISOLATION MODULE

SELECTIVE SILICON NITRIDE WITH TREATMENT FOR BACKSIDE POWER DELIVER...

SELF-ALIGNING BACKSIDE GATE CONNECTION

METHODS FOR ENABLING CHEMICAL MECHANICAL POLISHING AND BONDING OF A...

N-CHANNEL COUPLED WITH P-CHANNEL AND METHODS OF MANUFACTURE

SEMICONDUCTOR AIRGAP SPACER AND FABRICATION METHODS

CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THIC...

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY

ISOLATION MODULE FORMATION FOR BACKSIDE POWER DELIVERY APPLICATION

METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE

GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

FINFET DEVICES

CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...

CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...

ENHANCED LINERLESS VIAS

SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE

NARROWING SINGLE DIFFUSION BREAK

REDUCED DIFFUSION BREAK STRUCTURE

CO-INTEGRATING GATE-ALL-AROUND NANOSHEET TRANSISTORS AND COMB NANOS...

GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL IN...

HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSH...

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...

INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG...

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING...

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR WITH BOTTOM DIELECTRIC ISOL...

SEMICONDUCTOR DEVICE HAVING HYBRID MIDDLE OF LINE CONTACTS

ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER