Venkatram Venkatasamy

Person

Athens, GA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Near field transducers including electrodeposited plasmonic materia...
- Patent number 11,015,256
- Issue date May 25, 2021
- Seagate Technology LLC
- Lien Lee
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Near field transducers including electrodeposited plasmonic materia...
- Patent number 10,100,422
- Issue date Oct 16, 2018
- Seagate Technology LLC
- Lien Lee
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Heat assisted magnetic recording heads having bilayer heat sinks
- Patent number 9,305,575
- Issue date Apr 5, 2016
- Seagate Technology LLC
- Tong Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable metallization cells and methods of forming the same
- Patent number 8,940,577
- Issue date Jan 27, 2015
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heat assisted magnetic recording heads having bilayer heat sinks
- Patent number 8,902,719
- Issue date Dec 2, 2014
- Seagate Technology LLC
- Tong Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable resistive memory cell with sacrificial metal
- Patent number 8,435,827
- Issue date May 7, 2013
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a programmable metallization memory cell
- Patent number 8,343,801
- Issue date Jan 1, 2013
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable metallization cells and methods of forming the same
- Patent number 8,293,571
- Issue date Oct 23, 2012
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistive memory cell with oxide layer
- Patent number 8,288,753
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistive memory cell with sacrificial metal
- Patent number 8,097,874
- Issue date Jan 17, 2012
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistive memory cell with oxide layer
- Patent number 8,058,646
- Issue date Nov 15, 2011
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of electrodepositing germanium compound materials on a subst...
- Patent number 7,918,984
- Issue date Apr 5, 2011
- International Business Machines Corporation
- Qiang Huang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Programmable metallization cells and methods of forming the same
- Patent number 7,842,938
- Issue date Nov 30, 2010
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells including nanoporous layers containing conductive mate...
- Patent number 7,750,386
- Issue date Jul 6, 2010
- Seagate Technology LLC
- Wei Tian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIA...
- Publication number 20190048487
- Publication date Feb 14, 2019
- SEAGATE TECHNOLOGY LLC
- Lien Lee
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS
- Publication number 20150154989
- Publication date Jun 4, 2015
- SEAGATE TECHNOLOGY LLC
- Tong Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIA...
- Publication number 20150083601
- Publication date Mar 26, 2015
- SEAGATE TECHNOLOGY LLC
- Lien Lee
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS
- Publication number 20130286804
- Publication date Oct 31, 2013
- SEAGATE TECHNOLOGY LLC
- Tong Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL
- Publication number 20130228734
- Publication date Sep 5, 2013
- SEAGATE TECHNOLOGY LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME
- Publication number 20130009126
- Publication date Jan 10, 2013
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL
- Publication number 20120104349
- Publication date May 3, 2012
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODEPOSITION OF CoNiP FILMS
- Publication number 20120080317
- Publication date Apr 5, 2012
- Seagate Technology LLC
- Venkatram Venkatasamy
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
- Publication number 20120040496
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
- Publication number 20120032131
- Publication date Feb 9, 2012
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME
- Publication number 20110037047
- Publication date Feb 17, 2011
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME
- Publication number 20100117052
- Publication date May 13, 2010
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING NANOPOROUS LAYERS CONTAINING CONDUCTIVE MATE...
- Publication number 20100117051
- Publication date May 13, 2010
- Seagate Technology LLC
- Wei Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL
- Publication number 20100108978
- Publication date May 6, 2010
- Seagate Technology LLC
- Venkatram Venkatasamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER
- Publication number 20100102308
- Publication date Apr 29, 2010
- Seagate Technology LLC
- Ming Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ELECTRODEPOSITING GERMANIUM COMPOUND MATERIALS ON A SUBST...
- Publication number 20090071836
- Publication date Mar 19, 2009
- International Business Machines Corporation
- Qiang Huang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYE...
- Publication number 20090011577
- Publication date Jan 8, 2009
- IBM CORPORATION (YORKTOWN)
- Qiang Huang
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Venkatram Venkatasamy

Person

Patents Grantslast 30 patents

Near field transducers including electrodeposited plasmonic materia...

Near field transducers including electrodeposited plasmonic materia...

Heat assisted magnetic recording heads having bilayer heat sinks

Programmable metallization cells and methods of forming the same

Heat assisted magnetic recording heads having bilayer heat sinks

Programmable resistive memory cell with sacrificial metal

Method of forming a programmable metallization memory cell

Programmable metallization cells and methods of forming the same

Programmable resistive memory cell with oxide layer

Programmable resistive memory cell with sacrificial metal

Programmable resistive memory cell with oxide layer

Method of electrodepositing germanium compound materials on a subst...

Programmable metallization cells and methods of forming the same

Memory cells including nanoporous layers containing conductive mate...

Patents Applicationslast 30 patents

NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIA...

HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS

NEAR FIELD TRANSDUCERS INCLUDING ELECTRODEPOSITED PLASMONIC MATERIA...

HEAT ASSISTED MAGNETIC RECORDING HEADS HAVING BILAYER HEAT SINKS

PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL

PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME

PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL

ELECTRODEPOSITION OF CoNiP FILMS

PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER

PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER

PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME

PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME

MEMORY CELLS INCLUDING NANOPOROUS LAYERS CONTAINING CONDUCTIVE MATE...

PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL

PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER

METHOD OF ELECTRODEPOSITING GERMANIUM COMPOUND MATERIALS ON A SUBST...

METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYE...