Venkatraman Prabhakar

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods involving use of nitrogen-containing plasma to treat liquid...
- Patent number 12,015,142
- Issue date Jun 18, 2024
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...
- Patent number 11,810,616
- Issue date Nov 7, 2023
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Embedded SONOS and high voltage select gate with a high-K metal gat...
- Patent number 11,610,820
- Issue date Mar 21, 2023
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 11,361,826
- Issue date Jun 14, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...
- Patent number 11,355,185
- Issue date Jun 7, 2022
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Embedded sonos with triple gate oxide and manufacturing method of t...
- Patent number 10,784,356
- Issue date Sep 22, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for non-volatile memory
- Patent number 10,706,937
- Issue date Jul 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 10,418,110
- Issue date Sep 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bias scheme for word programming in non-volatile memory and inhibit...
- Patent number 10,332,599
- Issue date Jun 25, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Gary Menezes
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 10,262,747
- Issue date Apr 16, 2019
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 10,204,691
- Issue date Feb 12, 2019
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, methods, and apparatus for memory cells with common source...
- Patent number 10,192,622
- Issue date Jan 29, 2019
- Cypress Semiconductor Corporation
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Drain extended MOS transistors with split channel
- Patent number 10,103,244
- Issue date Oct 16, 2018
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded SONOS with triple gate oxide and manufacturing method of t...
- Patent number 10,062,573
- Issue date Aug 28, 2018
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 10,020,060
- Issue date Jul 10, 2018
- Cypress Semiconductor Corporation
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Complementary SONOS integration into CMOS flow
- Patent number 10,002,878
- Issue date Jun 19, 2018
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary SONOS integration into CMOS flow
- Patent number 9,997,528
- Issue date Jun 12, 2018
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded SONOS based memory cells
- Patent number 9,922,988
- Issue date Mar 20, 2018
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to integrate SONOS into CMOS flow
- Patent number 9,893,172
- Issue date Feb 13, 2018
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to integrate SONOS into CMOS flow
- Patent number 9,865,711
- Issue date Jan 9, 2018
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 9,847,137
- Issue date Dec 19, 2017
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, methods, and apparatus for memory cells with common source...
- Patent number 9,818,484
- Issue date Nov 14, 2017
- Cypress Semiconductor Corporation
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
- Patent number 9,747,987
- Issue date Aug 29, 2017
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, methods, and apparatus for memory cells with common source...
- Patent number 9,627,073
- Issue date Apr 18, 2017
- Cypress Semiconductor Corporation
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Split voltage non-volatile latch cell
- Patent number 9,620,225
- Issue date Apr 11, 2017
- Cypress Semiconductor Corporation
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded SONOS based memory cells
- Patent number 9,620,516
- Issue date Apr 11, 2017
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for non-volatile memory
- Patent number 9,589,652
- Issue date Mar 7, 2017
- Cypress Semiconductor Corporation
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, methods, and apparatus for memory cells with common source...
- Patent number 9,466,374
- Issue date Oct 11, 2016
- Cypress Semiconductor Corporation
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to reduce program disturbs in non-volatile memory cells
- Patent number 9,431,124
- Issue date Aug 30, 2016
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells
- Patent number 9,378,821
- Issue date Jun 28, 2016
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS INVOLVING USE OF NITROGEN-CONTAINING PLASMA TO...
- Publication number 20240339591
- Publication date Oct 10, 2024
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems and Methods Involving Use of Nitrogen-Containing Plasma to...
- Publication number 20230231103
- Publication date Jul 20, 2023
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Integrating SONOS into HKMG Flow
- Publication number 20230081072
- Publication date Mar 16, 2023
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...
- Publication number 20220359006
- Publication date Nov 10, 2022
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTE-IN-MEMORY DEVICES, SYSTEMS AND METHODS OF OPERATION THEREOF
- Publication number 20220309328
- Publication date Sep 29, 2022
- Infineon Technologies LLC
- Prashant Kumar Saxena
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...
- Publication number 20220284951
- Publication date Sep 8, 2022
- Infineon Technologies LLC
- Venkatraman Prabhakar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SYSTEMS AND METHODS INVOLVING USE OF NITROGEN-CONTAINING PLASMA TO...
- Publication number 20210343999
- Publication date Nov 4, 2021
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...
- Publication number 20210159346
- Publication date May 27, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...
- Publication number 20210074821
- Publication date Mar 11, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20200402588
- Publication date Dec 24, 2020
- LONGITDUE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED SONOS AND HIGH VOLTAGE SELECT GATE WITH A HIGH-K METAL GAT...
- Publication number 20200350213
- Publication date Nov 5, 2020
- Infineon Technologies LLC
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...
- Publication number 20200051642
- Publication date Feb 13, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Gary Menezes
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY
- Publication number 20200020402
- Publication date Jan 16, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...
- Publication number 20190318785
- Publication date Oct 17, 2019
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Application
BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...
- Publication number 20190147960
- Publication date May 16, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Gary Menezes
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...
- Publication number 20190088487
- Publication date Mar 21, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20180358097
- Publication date Dec 13, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...
- Publication number 20180082746
- Publication date Mar 22, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20180068735
- Publication date Mar 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY SONOS INTEGRATION INTO CMOS FLOW
- Publication number 20180040625
- Publication date Feb 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...
- Publication number 20170278573
- Publication date Sep 28, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded SONOS Based Memory Cells
- Publication number 20170263622
- Publication date Sep 14, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20170169888
- Publication date Jun 15, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY
- Publication number 20170092367
- Publication date Mar 30, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...
- Publication number 20170011800
- Publication date Jan 12, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Xiaojun Yu
- G11 - INFORMATION STORAGE
Information Patent Application
Method to Reduce Program Disturbs in Non-Volatile Memory Cells
- Publication number 20170011807
- Publication date Jan 12, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded SONOS Based Memory Cells
- Publication number 20160260730
- Publication date Sep 8, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Drain Extended MOS Transistors With Split Channel
- Publication number 20160247897
- Publication date Aug 25, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Voltage Non-Volatile Latch Cell
- Publication number 20160217861
- Publication date Jul 28, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Jayant Ashokkumar
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLIMENTARY SONOS INTEGRATION INTO CMOS FLOW
- Publication number 20160204120
- Publication date Jul 14, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS

Venkatraman Prabhakar

Person

Patents Grantslast 30 patents

Methods involving use of nitrogen-containing plasma to treat liquid...

Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...

Embedded SONOS and high voltage select gate with a high-K metal gat...

Asymmetric pass field-effect transistor for nonvolatile memory

Silicon-oxide-nitride-oxide-silicon multi-level non-volatile memory...

Embedded sonos with triple gate oxide and manufacturing method of t...

Asymmetric pass field-effect transistor for non-volatile memory

Asymmetric pass field-effect transistor for nonvolatile memory

Bias scheme for word programming in non-volatile memory and inhibit...

Method to reduce program disturbs in non-volatile memory cells

Method to reduce program disturbs in non-volatile memory cells

Systems, methods, and apparatus for memory cells with common source...

Drain extended MOS transistors with split channel

Embedded SONOS with triple gate oxide and manufacturing method of t...

Asymmetric pass field-effect transistor for nonvolatile memory

Complementary SONOS integration into CMOS flow

Complimentary SONOS integration into CMOS flow

Embedded SONOS based memory cells

Methods to integrate SONOS into CMOS flow

Methods to integrate SONOS into CMOS flow

Method to reduce program disturbs in non-volatile memory cells

Systems, methods, and apparatus for memory cells with common source...

Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

Systems, methods, and apparatus for memory cells with common source...

Split voltage non-volatile latch cell

Embedded SONOS based memory cells

Asymmetric pass field-effect transistor for non-volatile memory

Systems, methods, and apparatus for memory cells with common source...

Method to reduce program disturbs in non-volatile memory cells

Endurance of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells

Patents Applicationslast 30 patents

SYSTEMS AND METHODS INVOLVING USE OF NITROGEN-CONTAINING PLASMA TO...

Systems and Methods Involving Use of Nitrogen-Containing Plasma to...

Method of Integrating SONOS into HKMG Flow

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...

COMPUTE-IN-MEMORY DEVICES, SYSTEMS AND METHODS OF OPERATION THEREOF

SILICON-OXIDE-NITRIDE-OXIDE-SILICON BASED MULTI-LEVEL NON-VOLATILE...

SYSTEMS AND METHODS INVOLVING USE OF NITROGEN-CONTAINING PLASMA TO...

SILICON-OXIDE-NITRIDE-OXIDE-SILICON MULTI-LEVEL NON-VOLATILE MEMORY...

EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

EMBEDDED SONOS AND HIGH VOLTAGE SELECT GATE WITH A HIGH-K METAL GAT...

BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY

SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...

BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT...

EMBEDDED SONOS WITH TRIPLE GATE OXIDE AND MANUFACTURING METHOD OF T...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

COMPLEMENTARY SONOS INTEGRATION INTO CMOS FLOW

SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...

Embedded SONOS Based Memory Cells

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY

SYSTEMS, METHODS, AND APPARATUS FOR MEMORY CELLS WITH COMMON SOURCE...

Method to Reduce Program Disturbs in Non-Volatile Memory Cells

Embedded SONOS Based Memory Cells

Drain Extended MOS Transistors With Split Channel

Split Voltage Non-Volatile Latch Cell

COMPLIMENTARY SONOS INTEGRATION INTO CMOS FLOW