Vidyut Gopal

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a doped metal oxide for use in resistive switchi...
- Patent number 9,543,516
- Issue date Jan 10, 2017
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded nonvolatile memory elements having resistive switching cha...
- Patent number 9,444,047
- Issue date Sep 13, 2016
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Confined defect profiling within resistive random memory access cells
- Patent number 9,269,896
- Issue date Feb 23, 2016
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,246,096
- Issue date Jan 26, 2016
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded nonvolatile memory elements having resistive switching cha...
- Patent number 9,129,894
- Issue date Sep 8, 2015
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Grant
Atomic layer deposition of metal oxide materials for memory applica...
- Patent number 9,130,165
- Issue date Sep 8, 2015
- Intermolecular, Inc.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transition metal oxide bilayers
- Patent number 9,087,978
- Issue date Jul 21, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 9,065,040
- Issue date Jun 23, 2015
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 9,006,026
- Issue date Apr 14, 2015
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal oxide bilayers
- Patent number 8,987,697
- Issue date Mar 24, 2015
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined defect profiling within resistive random memory access cells
- Patent number 8,913,418
- Issue date Dec 16, 2014
- Intermolecular, Inc.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cells having doped current limiting...
- Patent number 8,912,518
- Issue date Dec 16, 2014
- Intermolecular, Inc.
- David Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multifunctional electrode
- Patent number 8,906,736
- Issue date Dec 9, 2014
- Intermolecular, Inc.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition of metal oxide materials for memory applica...
- Patent number 8,883,655
- Issue date Nov 11, 2014
- Intermoecular, Inc.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Controlling composition of multiple oxides in resistive switching l...
- Patent number 8,883,557
- Issue date Nov 11, 2014
- Intermolecular, Inc.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional electrode
- Patent number 8,859,328
- Issue date Oct 14, 2014
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of metal oxides for memory applications
- Patent number 8,846,443
- Issue date Sep 30, 2014
- Intermolecular, Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming resistive switching memory elements
- Patent number 8,802,492
- Issue date Aug 12, 2014
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial oxide used as switching layer in a nonvolatile resistiv...
- Patent number 8,791,445
- Issue date Jul 29, 2014
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming resistive switching memory elements with improve...
- Patent number 8,787,066
- Issue date Jul 22, 2014
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional electrode
- Patent number 8,779,407
- Issue date Jul 15, 2014
- Intermolecular, Inc.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition of zirconium oxide for forming resistive-sw...
- Patent number 8,741,698
- Issue date Jun 3, 2014
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multifunctional electrode
- Patent number 8,735,217
- Issue date May 27, 2014
- Intermolecular, Inc.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transition metal oxide bilayers
- Patent number 8,704,203
- Issue date Apr 22, 2014
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching resistive switching and electrode layers
- Patent number 8,658,511
- Issue date Feb 25, 2014
- Intermolecular, Inc.
- Frederick Carlos Fulgenico
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal oxide bilayers
- Patent number 8,569,104
- Issue date Oct 29, 2013
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of hafnium and zirconium oxides for memory...
- Patent number 8,546,275
- Issue date Oct 1, 2013
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film solar cell with ceramic handling layer
- Patent number 8,481,357
- Issue date Jul 9, 2013
- Crystal Solar Incorporated
- Ananda H. Kumar
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Atomic layer deposition of metal oxide materials for memory applica...
- Patent number 8,466,446
- Issue date Jun 18, 2013
- Intermolecular, Inc.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition of metal oxide materials for memory applica...
- Patent number 8,288,297
- Issue date Oct 16, 2012
- Intermolecular, Inc.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Method For Forming Resistive Switching Memory Elements
- Publication number 20160172588
- Publication date Jun 16, 2016
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...
- Publication number 20150325788
- Publication date Nov 12, 2015
- INTERMOLECULAR INC.
- Imran Hashim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20150200361
- Publication date Jul 16, 2015
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded Resistors with Oxygen Gettering Layers
- Publication number 20150188039
- Publication date Jul 2, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20150179935
- Publication date Jun 25, 2015
- INTERMOLECULAR INC.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...
- Publication number 20150060753
- Publication date Mar 5, 2015
- INTERMOLECULAR INC.
- Chien-Lan Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...
- Publication number 20150056749
- Publication date Feb 26, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Defect Profiling within Resistive Random Memory Access Cells
- Publication number 20150034898
- Publication date Feb 5, 2015
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140374240
- Publication date Dec 25, 2014
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic Layer Deposition of Metal Oxides for Memory Applications
- Publication number 20140363920
- Publication date Dec 11, 2014
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Defect Profiling within Resistive Random Memory Access Cells
- Publication number 20140264231
- Publication date Sep 18, 2014
- INTERMOLECULAR INC.
- Yun Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20140224645
- Publication date Aug 14, 2014
- INTERMOLECULAR INC.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20140217348
- Publication date Aug 7, 2014
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bilayered Oxide Structures for ReRAM Cells
- Publication number 20140175360
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Materials for Thin Resisive Switching Layers of Re-RAM Cells
- Publication number 20140175367
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Mihir Tendulkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Vehicles for High Productivity Combinatorial Testing of...
- Publication number 20140154859
- Publication date Jun 5, 2014
- INTERMOLECULAR INC.
- Vidyut Gopal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistive Random Access Memory Cells Having Doped Current Limiting...
- Publication number 20140124725
- Publication date May 8, 2014
- Intermolecular, Inc.
- David Chi
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...
- Publication number 20140078808
- Publication date Mar 20, 2014
- Intermolecular, Inc.
- Imran Hashim
- G11 - INFORMATION STORAGE
Information Patent Application
Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...
- Publication number 20140073107
- Publication date Mar 13, 2014
- INTERMOLECULAR INC.
- Yun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Multifunctional Electrode
- Publication number 20140038380
- Publication date Feb 6, 2014
- Kabushiki Kaisha Toshiba
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Thin Film Solar Cell with Ceramic Handling Layer
- Publication number 20140014172
- Publication date Jan 16, 2014
- Ananda H. Kumar
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory...
- Publication number 20130334484
- Publication date Dec 19, 2013
- INTERMOLECULAR INC.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20130334490
- Publication date Dec 19, 2013
- INTERMOLECULAR INC.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...
- Publication number 20130228735
- Publication date Sep 5, 2013
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFUNCTIONAL ELECTRODE
- Publication number 20130200323
- Publication date Aug 8, 2013
- Intermolecular, Inc.
- Hieu Pham
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Transition Metal Oxide Bilayers
- Publication number 20130200324
- Publication date Aug 8, 2013
- Intermolecular, Inc.
- Hieu Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SW...
- Publication number 20130134376
- Publication date May 30, 2013
- Intermolecular, Inc.
- Jinhong Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Resistive Switching Memory Elements with Improve...
- Publication number 20130107604
- Publication date May 2, 2013
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF HAFNIUM AND ZIRCONIUM OXIDES FOR MEMORY...
- Publication number 20130071984
- Publication date Mar 21, 2013
- Intermolecular, Inc.
- Yun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONS
- Publication number 20130065377
- Publication date Mar 14, 2013
- Intermolecular, Inc.
- Vidyut Gopal
- H01 - BASIC ELECTRIC ELEMENTS

Vidyut Gopal

Person

Patents Grantslast 30 patents

Method for forming a doped metal oxide for use in resistive switchi...

Embedded nonvolatile memory elements having resistive switching cha...

Confined defect profiling within resistive random memory access cells

Atomic layer deposition of metal oxides for memory applications

Embedded nonvolatile memory elements having resistive switching cha...

Atomic layer deposition of metal oxide materials for memory applica...

Transition metal oxide bilayers

Controlling composition of multiple oxides in resistive switching l...

Atomic layer deposition of metal oxides for memory applications

Transition metal oxide bilayers

Confined defect profiling within resistive random memory access cells

Resistive random access memory cells having doped current limiting...

Multifunctional electrode

Atomic layer deposition of metal oxide materials for memory applica...

Controlling composition of multiple oxides in resistive switching l...

Multifunctional electrode

Atomic layer deposition of metal oxides for memory applications

Method for forming resistive switching memory elements

Interfacial oxide used as switching layer in a nonvolatile resistiv...

Method for forming resistive switching memory elements with improve...

Multifunctional electrode

Atomic layer deposition of zirconium oxide for forming resistive-sw...

Multifunctional electrode

Transition metal oxide bilayers

Etching resistive switching and electrode layers

Transition metal oxide bilayers

Atomic layer deposition of hafnium and zirconium oxides for memory...

Thin film solar cell with ceramic handling layer

Atomic layer deposition of metal oxide materials for memory applica...

Atomic layer deposition of metal oxide materials for memory applica...

Patents Applicationslast 30 patents

Method For Forming Resistive Switching Memory Elements

Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...

Transition Metal Oxide Bilayers

Embedded Resistors with Oxygen Gettering Layers

Atomic Layer Deposition of Metal Oxides for Memory Applications

CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING L...

Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...

Confined Defect Profiling within Resistive Random Memory Access Cells

MULTIFUNCTIONAL ELECTRODE

Atomic Layer Deposition of Metal Oxides for Memory Applications

Confined Defect Profiling within Resistive Random Memory Access Cells

MULTIFUNCTIONAL ELECTRODE

Transition Metal Oxide Bilayers

Bilayered Oxide Structures for ReRAM Cells

Materials for Thin Resisive Switching Layers of Re-RAM Cells

Methods and Vehicles for High Productivity Combinatorial Testing of...

Resistive Random Access Memory Cells Having Doped Current Limiting...

Embedded Nonvolatile Memory Elements Having Resistive Switching Cha...

Atomic Layer Deposition of Metal Oxide Materials for Memory Applica...

Multifunctional Electrode

Thin Film Solar Cell with Ceramic Handling Layer

Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory...

Transition Metal Oxide Bilayers

INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...

MULTIFUNCTIONAL ELECTRODE

Transition Metal Oxide Bilayers

ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SW...

Method for Forming Resistive Switching Memory Elements with Improve...

ATOMIC LAYER DEPOSITION OF HAFNIUM AND ZIRCONIUM OXIDES FOR MEMORY...

INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONS