Vijay Narayanan

Person

New York, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned metal gate with poly silicide for vertical transport f...
- Patent number 12,034,005
- Issue date Jul 9, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM structures in the BEOL
- Patent number 11,877,458
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Baozhen Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Topological semi-metal interconnects
- Patent number 11,749,602
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 11,700,778
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Steven Consiglio
Information Patent Grant
Multi-metal dipole doping to offer multi-threshold voltage pairs wi...
- Patent number 11,393,725
- Issue date Jul 19, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-free plasma etching for contact etching of resistive random...
- Patent number 11,258,012
- Issue date Feb 22, 2022
- Tokyo Electron Limited
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Artificial synapse with hafnium oxide-based ferroelectric layer in...
- Patent number 11,244,999
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with pure silicon oxide layer on silicon-germanium layer
- Patent number 11,217,450
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encryption engine with an undetectable/tamper-proof private key in...
- Patent number 11,216,595
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Richard H. Boivie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Conformal replacement gate electrode for short channel devices
- Patent number 11,195,929
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-metal dipole doping to offer multi-threshold voltage pairs wi...
- Patent number 11,195,762
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 11,158,795
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Takashi Ando
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Structures and methods for equivalent oxide thickness scaling on si...
- Patent number 11,152,214
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area enhancement for stacked metal-insulator-metal (MIM) ca...
- Patent number 11,121,209
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-resistance memory devices
- Patent number 11,043,535
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation scheme for n-type and p-type transistors having sepa...
- Patent number 11,031,301
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Encryption engine with an undetectable/tamper proof private key in...
- Patent number 10,997,321
- Issue date May 4, 2021
- International Business Machines Corporation
- Richard H. Boivie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 10,991,881
- Issue date Apr 27, 2021
- Tokyo Electron Limited
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation scheme for n-type and p-type transistors having sepa...
- Patent number 10,985,075
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area enhancement for stacked metal-insulator-metal (MIM) ca...
- Patent number 10,978,551
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal gate with poly silicide for vertical transport f...
- Patent number 10,957,696
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-terminal copper-driven neuromorphic device
- Patent number 10,957,937
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Teodor K. Todorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of pure silicon oxide interfacial layer on silicon-german...
- Patent number 10,916,432
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen vacancy and filament-loss protection for resistive switching...
- Patent number 10,903,425
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate first technique in vertical transport FET using doped silicon...
- Patent number 10,892,339
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fast recrystallization of hafnium or zirconium based oxides in insu...
- Patent number 10,833,150
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shared metal gate stack with tunable work function
- Patent number 10,756,194
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 10,727,407
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of high-K dielectric during reliability anneal on nanosh...
- Patent number 10,692,985
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Nicolas J. Loubet
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
TOPOLOGICAL SEMI-METAL INTERCONNECTS
- Publication number 20230361038
- Publication date Nov 9, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOPOLOGICAL SEMI-METAL INTERCONNECTS
- Publication number 20220157733
- Publication date May 19, 2022
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURES IN THE BEOL
- Publication number 20210280638
- Publication date Sep 9, 2021
- International Business Machines Corporation
- Baozhen Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20210234096
- Publication date Jul 29, 2021
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL GATE WITH POLY SILICIDE FOR VERTICAL TRANSPORT F...
- Publication number 20210118881
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...
- Publication number 20200381624
- Publication date Dec 3, 2020
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...
- Publication number 20200295147
- Publication date Sep 17, 2020
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Terminal Copper-Driven Neuromorphic Device
- Publication number 20200287236
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Teodor K. Todorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE
- Publication number 20200263620
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Takashi Ando
- F01 - MACHINES OR ENGINES IN GENERAL ENGINE PLANTS IN GENERAL STEAM ENGINES
Information Patent Application
Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...
- Publication number 20200203607
- Publication date Jun 25, 2020
- TOKYO ELECTRON LIMITED
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...
- Publication number 20200118888
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...
- Publication number 20200118889
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN VACANCY AND FILAMENT-LOSS PROTECTION FOR RESISTIVE SWITCHING...
- Publication number 20200075860
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS
- Publication number 20200066724
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL REPLACEMENT GATE ELECTRODE FOR SHORT CHANNEL DEVICES
- Publication number 20200066859
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Application
RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE
- Publication number 20200052207
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...
- Publication number 20200020539
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCRYPTION ENGINE WITH AN UNDETECTABLE/TAMPER-PROOF PRIVATE KEY IN...
- Publication number 20200019731
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Richard H. Boivie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ENCRYPTION ENGINE WITH AN UNDETECTABLE/TAMPER-PROOF PRIVATE KEY IN...
- Publication number 20200019732
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Richard H. Boivie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...
- Publication number 20200020595
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAST RECRYSTALLIZATION OF HAFNIUM OR ZIRCONIUM BASED OXIDES IN INSU...
- Publication number 20200020762
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...
- Publication number 20200020594
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPOSABLE LASER/FLASH ANNEAL ABSORBER FOR EMBEDDED NEUROMORPHIC ME...
- Publication number 20200020542
- Publication date Jan 16, 2020
- International Business Machines Corporation
- Kam-Leung Lee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...
- Publication number 20190371676
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...
- Publication number 20190371611
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...
- Publication number 20190326387
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MULTIPLE THRESHOLD VOLTAGE DEFINITION IN A...
- Publication number 20190287970
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Hemanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...
- Publication number 20190252500
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...
- Publication number 20190252499
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS

Vijay Narayanan

Person

Patents Grantslast 30 patents

Self-aligned metal gate with poly silicide for vertical transport f...

BEOL fat wire level ground rule compatible embedded artificial inte...

RRAM structures in the BEOL

Topological semi-metal interconnects

Method for controlling the forming voltage in resistive random acce...

Multi-metal dipole doping to offer multi-threshold voltage pairs wi...

Oxygen-free plasma etching for contact etching of resistive random...

Artificial synapse with hafnium oxide-based ferroelectric layer in...

Device with pure silicon oxide layer on silicon-germanium layer

Encryption engine with an undetectable/tamper-proof private key in...

Conformal replacement gate electrode for short channel devices

Multi-metal dipole doping to offer multi-threshold voltage pairs wi...

Resistive switching memory with replacement metal electrode

Structures and methods for equivalent oxide thickness scaling on si...

Surface area enhancement for stacked metal-insulator-metal (MIM) ca...

High-resistance memory devices

Gate formation scheme for n-type and p-type transistors having sepa...

Encryption engine with an undetectable/tamper proof private key in...

Method for controlling the forming voltage in resistive random acce...

Gate formation scheme for n-type and p-type transistors having sepa...

Surface area enhancement for stacked metal-insulator-metal (MIM) ca...

Self-aligned metal gate with poly silicide for vertical transport f...

Three-terminal copper-driven neuromorphic device

Formation of pure silicon oxide interfacial layer on silicon-german...

Oxygen vacancy and filament-loss protection for resistive switching...

Gate first technique in vertical transport FET using doped silicon...

Fast recrystallization of hafnium or zirconium based oxides in insu...

Shared metal gate stack with tunable work function

Resistive switching memory with replacement metal electrode

Protection of high-K dielectric during reliability anneal on nanosh...

Patents Applicationslast 30 patents

TOPOLOGICAL SEMI-METAL INTERCONNECTS

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

TOPOLOGICAL SEMI-METAL INTERCONNECTS

RRAM STRUCTURES IN THE BEOL

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

SELF-ALIGNED METAL GATE WITH POLY SILICIDE FOR VERTICAL TRANSPORT F...

METHOD FOR CONTROLLING THE FORMING VOLTAGE IN RESISTIVE RANDOM ACCE...

GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...

Three-Terminal Copper-Driven Neuromorphic Device

RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE

Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...

GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...

GATE FORMATION SCHEME FOR N-TYPE AND P-TYPE TRANSISTORS HAVING SEPA...

OXYGEN VACANCY AND FILAMENT-LOSS PROTECTION FOR RESISTIVE SWITCHING...

PATTERNED GATE DIELECTRICS FOR III-V-BASED CMOS CIRCUITS

CONFORMAL REPLACEMENT GATE ELECTRODE FOR SHORT CHANNEL DEVICES

RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

ENCRYPTION ENGINE WITH AN UNDETECTABLE/TAMPER-PROOF PRIVATE KEY IN...

ENCRYPTION ENGINE WITH AN UNDETECTABLE/TAMPER-PROOF PRIVATE KEY IN...

MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...

FAST RECRYSTALLIZATION OF HAFNIUM OR ZIRCONIUM BASED OXIDES IN INSU...

MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...

DISPOSABLE LASER/FLASH ANNEAL ABSORBER FOR EMBEDDED NEUROMORPHIC ME...

MULTI-METAL DIPOLE DOPING TO OFFER MULTI-THRESHOLD VOLTAGE PAIRS WI...

FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMAN...

Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...

STRUCTURE AND METHOD FOR MULTIPLE THRESHOLD VOLTAGE DEFINITION IN A...

Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...

Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in...