Viju K. Mathews

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 7,398,595
- Issue date Jul 15, 2008
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 7,393,753
- Issue date Jul 1, 2008
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage cell capacitor compatible with high dielectric constant mat...
- Patent number 7,385,240
- Issue date Jun 10, 2008
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 7,253,052
- Issue date Aug 7, 2007
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 7,153,707
- Issue date Dec 26, 2006
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Streamlined field isolation process
- Patent number 6,835,634
- Issue date Dec 28, 2004
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 6,791,131
- Issue date Sep 14, 2004
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer isolation structure formed by field oxidation
- Patent number 6,762,475
- Issue date Jul 13, 2004
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer isolation structure formed by field oxidation
- Patent number 6,611,038
- Issue date Aug 26, 2003
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 6,465,326
- Issue date Oct 15, 2002
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having improved resist adhesion
- Patent number 6,429,525
- Issue date Aug 6, 2002
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to improve the flow of oxide during field oxidation by fluo...
- Patent number 6,365,490
- Issue date Apr 2, 2002
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming an electrically conducti...
- Patent number 6,245,671
- Issue date Jun 12, 2001
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 6,245,644
- Issue date Jun 12, 2001
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving resist adhesion for use in patterning conductiv...
- Patent number 6,211,078
- Issue date Apr 3, 2001
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 6,156,612
- Issue date Dec 5, 2000
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to manufacture crown stacked capacitor structures with HSG-...
- Patent number RE36786
- Issue date Jul 18, 2000
- Micron Technology, Inc.
- Pierre Fazan
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Method for forming a storage cell capacitor compatible with high di...
- Patent number 6,030,847
- Issue date Feb 29, 2000
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 6,025,236
- Issue date Feb 15, 2000
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for stress reduction in silicon during field isolation
- Patent number 5,994,203
- Issue date Nov 30, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 5,940,692
- Issue date Aug 17, 1999
- Micron Technology, Inc.
- Nanseng Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming an electrically conducti...
- Patent number 5,933,754
- Issue date Aug 3, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 5,930,647
- Issue date Jul 27, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to improve the flow of oxide during field oxidation by fluo...
- Patent number 5,902,128
- Issue date May 11, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field oxide and active area regions on a semicon...
- Patent number 5,897,356
- Issue date Apr 27, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High pressure nitridation of tungsten
- Patent number 5,895,268
- Issue date Apr 20, 1999
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Locus isolation technique using high pressure oxidation (hipox) and...
- Patent number 5,891,788
- Issue date Apr 6, 1999
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing stress-induced defects in silicon
- Patent number 5,837,378
- Issue date Nov 17, 1998
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for doping hemispherical grain silicon
- Patent number 5,798,280
- Issue date Aug 25, 1998
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified LOCOS process for sub-half-micron technology
- Patent number 5,756,390
- Issue date May 26, 1998
- Micron Technology, Inc.
- Werner Juengling
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for forming a storage cell capacitor compatible with high di...
- Publication number 20070166915
- Publication date Jul 19, 2007
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A STORAGE CELL CAPACITOR COMPATIBLE WITH HIGH DI...
- Publication number 20060246607
- Publication date Nov 2, 2006
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A STROAGE CELL CAPACITOR COMPATIBLE WITH HIGH DI...
- Publication number 20060138510
- Publication date Jun 29, 2006
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a storage cell capacitor compatible with high di...
- Publication number 20050104107
- Publication date May 19, 2005
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a storage cell capacitor compatible with high di...
- Publication number 20050003609
- Publication date Jan 6, 2005
- Micron Technology, Inc.
- Pierre C. Fazan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer isolation structure formed by field oxidation
- Publication number 20030218232
- Publication date Nov 27, 2003
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor wafer isolation structure formed by field oxidation
- Publication number 20020060355
- Publication date May 23, 2002
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming field oxide and active area regions on a semicon...
- Publication number 20010029085
- Publication date Oct 11, 2001
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect structure having improved resist adhesion
- Publication number 20010018257
- Publication date Aug 30, 2001
- Micron Technology, Inc.
- Viju K. Mathews
- H01 - BASIC ELECTRIC ELEMENTS

Viju K. Mathews

Person

Patents Grantslast 30 patents

Method for forming a storage cell capacitor compatible with high di...

Method for forming a storage cell capacitor compatible with high di...

Storage cell capacitor compatible with high dielectric constant mat...

Method for forming a storage cell capacitor compatible with high di...

Method for forming a storage cell capacitor compatible with high di...

Streamlined field isolation process

Method for forming a storage cell capacitor compatible with high di...

Semiconductor wafer isolation structure formed by field oxidation

Semiconductor wafer isolation structure formed by field oxidation

Methods of forming field oxide and active area regions on a semicon...

Interconnect structure having improved resist adhesion

Process to improve the flow of oxide during field oxidation by fluo...

Semiconductor processing method of forming an electrically conducti...

Methods of forming field oxide and active area regions on a semicon...

Method of improving resist adhesion for use in patterning conductiv...

Methods of forming field oxide and active area regions on a semicon...

Process to manufacture crown stacked capacitor structures with HSG-...

Method for forming a storage cell capacitor compatible with high di...

Methods of forming field oxide and active area regions on a semicon...

Process for stress reduction in silicon during field isolation

Method of forming a field effect transistor

Semiconductor processing method of forming an electrically conducti...

Methods of forming field oxide and active area regions on a semicon...

Process to improve the flow of oxide during field oxidation by fluo...

Methods of forming field oxide and active area regions on a semicon...

High pressure nitridation of tungsten

Locus isolation technique using high pressure oxidation (hipox) and...

Method of reducing stress-induced defects in silicon

Process for doping hemispherical grain silicon

Modified LOCOS process for sub-half-micron technology

Patents Applicationslast 30 patents

Method for forming a storage cell capacitor compatible with high di...

METHOD FOR FORMING A STORAGE CELL CAPACITOR COMPATIBLE WITH HIGH DI...

METHOD FOR FORMING A STROAGE CELL CAPACITOR COMPATIBLE WITH HIGH DI...

Method for forming a storage cell capacitor compatible with high di...

Method for forming a storage cell capacitor compatible with high di...

Semiconductor wafer isolation structure formed by field oxidation

Semiconductor wafer isolation structure formed by field oxidation

Methods of forming field oxide and active area regions on a semicon...

Interconnect structure having improved resist adhesion