Vikas K. Kaushal

Person

Essex Junction, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar junction transistors with an air gap in the shallow trench...
- Patent number 9,653,566
- Issue date May 16, 2017
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control over a collector of a bipolar junction transistor
- Patent number 9,583,569
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with improved performance and bre...
- Patent number 9,368,608
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bipolar transistor with maskless self-aligned e...
- Patent number 9,356,097
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- David L. Harame
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Profile control over a collector of a bipolar junction transistor
- Patent number 9,245,951
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with an air gap in the shallow trench...
- Patent number 9,231,074
- Issue date Jan 5, 2016
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating bipolar junction transistors with reduced ep...
- Patent number 9,219,128
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with an airgap between the extri...
- Patent number 9,159,817
- Issue date Oct 13, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with reduced parasitic capacitance
- Patent number 9,070,734
- Issue date Jun 30, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the device by forming mo...
- Patent number 9,029,229
- Issue date May 12, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with reduced parasitic capacitance
- Patent number 8,957,456
- Issue date Feb 17, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bipolar device having a monocrystalline semiconductor intrinsic bas...
- Patent number 8,946,861
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having a monocrystalline semiconductor intrinsic bas...
- Patent number 8,810,005
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20160104770
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH...
- Publication number 20160087073
- Publication date Mar 24, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...
- Publication number 20160049503
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN AIRGAP BETWEEN THE EXTRI...
- Publication number 20150137185
- Publication date May 21, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20150053982
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20150035011
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH...
- Publication number 20150021738
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER
- Publication number 20140374802
- Publication date Dec 25, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...
- Publication number 20140361300
- Publication date Dec 11, 2014
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE DEVICE BY FORMING MO...
- Publication number 20140353725
- Publication date Dec 4, 2014
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...
- Publication number 20140264341
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...
- Publication number 20140246676
- Publication date Sep 4, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS

Vikas K. Kaushal

Person

Patents Grantslast 30 patents

Bipolar junction transistors with an air gap in the shallow trench...

Profile control over a collector of a bipolar junction transistor

Heterojunction bipolar transistor with improved performance and bre...

Method of forming a bipolar transistor with maskless self-aligned e...

Profile control over a collector of a bipolar junction transistor

Bipolar junction transistors with an air gap in the shallow trench...

Methods of fabricating bipolar junction transistors with reduced ep...

Heterojunction bipolar transistors with an airgap between the extri...

Heterojunction bipolar transistors with reduced parasitic capacitance

Semiconductor device and method of forming the device by forming mo...

Heterojunction bipolar transistors with reduced parasitic capacitance

Bipolar device having a monocrystalline semiconductor intrinsic bas...

Bipolar device having a monocrystalline semiconductor intrinsic bas...

Patents Applicationslast 30 patents

PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR

BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH...

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN AIRGAP BETWEEN THE EXTRI...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED PARASITIC CAPACITANCE

HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED PARASITIC CAPACITANCE

BIPOLAR JUNCTION TRANSISTORS WITH AN AIR GAP IN THE SHALLOW TRENCH...

BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER

BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE DEVICE BY FORMING MO...

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...

BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BAS...