Vikram Joshi

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric and high dielectric constant integrated circuit capac...
- Patent number 7,459,318
- Issue date Dec 2, 2008
- Symetrix Corporation
- Carlos A. Paz de Araujo
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked memory cell having diffusion barriers
- Patent number 7,187,079
- Issue date Mar 6, 2007
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric and high dielectric constant integrated circuit capac...
- Patent number 7,075,134
- Issue date Jul 11, 2006
- Symetrix Corporation
- Carlos A. Paz de Araujo
- G11 - INFORMATION STORAGE
Information Patent Grant
Barrier layers for protecting metal oxides from hydrogen degradation
- Patent number 7,064,374
- Issue date Jun 20, 2006
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making layered superlattice material with improved micros...
- Patent number 7,001,778
- Issue date Feb 21, 2006
- Symetrix Corporation
- Junichi Karasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,924,997
- Issue date Aug 2, 2005
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making layered superlattice material with ultra-thin top...
- Patent number 6,890,768
- Issue date May 10, 2005
- Symetrix Corporation
- Junichi Karaswaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer oxide containing thin films for high dielectric constant...
- Patent number 6,867,452
- Issue date Mar 15, 2005
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric composite material, method of making same and memory...
- Patent number 6,831,313
- Issue date Dec 14, 2004
- Symetrix Corporation
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low thermal budget fabrication of ferroelectric memory using RTP
- Patent number 6,815,223
- Issue date Nov 9, 2004
- Symetrix Corporation
- Jolanta Celinska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layers for protecting metal oxides from hydrogen degradation
- Patent number 6,781,184
- Issue date Aug 24, 2004
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked memory cell having diffusion barriers
- Patent number 6,743,643
- Issue date Jun 1, 2004
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature oxidizing method of making a layered superlattice m...
- Patent number 6,582,972
- Issue date Jun 24, 2003
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric and high dielectric constant transistors
- Patent number 6,559,469
- Issue date May 6, 2003
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming an integrated circuit
- Patent number 6,541,279
- Issue date Apr 1, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer oxide containing thin films for high dielectric constant...
- Patent number 6,495,878
- Issue date Dec 17, 2002
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor, memory utilizing same, and m...
- Patent number 6,441,414
- Issue date Aug 27, 2002
- Symetrix Corporation
- Myoungho Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric device with bismuth tantalate capping layer and metho...
- Patent number 6,437,380
- Issue date Aug 20, 2002
- Symetrix Corporation
- Myoungho Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,373,743
- Issue date Apr 16, 2002
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,370,056
- Issue date Apr 9, 2002
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field effect transistor, memory utilizing same, and m...
- Patent number 6,339,238
- Issue date Jan 15, 2002
- Symetrix Corporation
- Myoungho Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Recovery of electronic properties in hydrogen-damaged ferroelectric...
- Patent number 6,322,849
- Issue date Nov 27, 2001
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for fabricating layered superlattice materi...
- Patent number 6,245,580
- Issue date Jun 12, 2001
- Symetrix Corporation
- Narayan Solayappan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Recovery of electronic properties in process-damaged ferroelectrics...
- Patent number 6,171,934
- Issue date Jan 9, 2001
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory with ferroelectric thin film having thickness...
- Patent number 6,104,049
- Issue date Aug 15, 2000
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-component electromagnetic wave absorption panels
- Patent number 6,037,046
- Issue date Mar 14, 2000
- Symetrix Corporation
- Vikram Joshi
- E04 - BUILDING
Information Patent Grant
Process for fabricating layered superlattice materials and AB0.sub....
- Patent number 5,962,069
- Issue date Oct 5, 1999
- Symetrix Corporation
- Gunther Schindler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for making an integrated circuit with high dielectric const...
- Patent number 5,888,585
- Issue date Mar 30, 1999
- Symetrix Corporation
- Joseph D. Cuchiaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Materials for electromagnetic wave absorption panels
- Patent number 5,853,889
- Issue date Dec 29, 1998
- Symetrix Corporation
- Vikram Joshi
- E04 - BUILDING
Information Patent Grant
Method for fabricating thin films of barium strontium titanate with...
- Patent number 5,853,500
- Issue date Dec 29, 1998
- Symetrix Corporation
- Vikram Joshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Ferroelectric and high dielectric constant integrated circuit capac...
- Publication number 20060194348
- Publication date Aug 31, 2006
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C30 - CRYSTAL GROWTH
Information Patent Application
Ferroelectric memory and method of operating same
- Publication number 20050094457
- Publication date May 5, 2005
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Barrier layers for protecting metal oxides from hydrogen degradation
- Publication number 20040232468
- Publication date Nov 25, 2004
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric composite material, method of making same and memory...
- Publication number 20040129987
- Publication date Jul 8, 2004
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric and high dielectric constant integrated circuit capac...
- Publication number 20040129961
- Publication date Jul 8, 2004
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of making layered superlattice material with ultra-thin top...
- Publication number 20040113186
- Publication date Jun 17, 2004
- Junichi Karasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low thermal budget fabrication of ferroelectric memory using RTP
- Publication number 20040101977
- Publication date May 27, 2004
- Symetrix Corporation
- Jolanta Celinska
- C30 - CRYSTAL GROWTH
Information Patent Application
Stacked memory cell and process of fabricating same
- Publication number 20040089920
- Publication date May 13, 2004
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked memory cell having diffusion barriers
- Publication number 20040046198
- Publication date Mar 11, 2004
- Symetrix Corporation
- Vikram Joshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Ferroelectric memory and method of operating same
- Publication number 20040047174
- Publication date Mar 11, 2004
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Method of making layered superlattice material with improved micros...
- Publication number 20040048455
- Publication date Mar 11, 2004
- Junichi Karasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked memory cell having diffusion barriers
- Publication number 20030132470
- Publication date Jul 17, 2003
- Symetrix Corporation
- Vikram Joshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Stacked memory cell and process of fabricating same
- Publication number 20030102531
- Publication date Jun 5, 2003
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier layers for protecting metal oxides from hydrogen degradation
- Publication number 20030098497
- Publication date May 29, 2003
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlayer oxide containing thin films for high dielectric constant...
- Publication number 20030052357
- Publication date Mar 20, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric composite material, method of making same, and memory...
- Publication number 20020168785
- Publication date Nov 14, 2002
- Symetrix Corporation
- Carlos A. Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Iridium oxide diffusion barrier between local interconnect layer an...
- Publication number 20010013614
- Publication date Aug 16, 2001
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide thin films for high dielectric constant application
- Publication number 20010012698
- Publication date Aug 9, 2001
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECOVERY OF ELECTRONIC PROPERTIES IN HYDROGEN-DAMAGED FERROELECTRIC...
- Publication number 20010002273
- Publication date May 31, 2001
- VIKRAM JOSHI
- H01 - BASIC ELECTRIC ELEMENTS

Vikram Joshi

Person

Patents Grantslast 30 patents

Ferroelectric and high dielectric constant integrated circuit capac...

Stacked memory cell having diffusion barriers

Ferroelectric and high dielectric constant integrated circuit capac...

Barrier layers for protecting metal oxides from hydrogen degradation

Method of making layered superlattice material with improved micros...

Ferroelectric memory and method of operating same

Method of making layered superlattice material with ultra-thin top...

Interlayer oxide containing thin films for high dielectric constant...

Ferroelectric composite material, method of making same and memory...

Low thermal budget fabrication of ferroelectric memory using RTP

Barrier layers for protecting metal oxides from hydrogen degradation

Stacked memory cell having diffusion barriers

Low temperature oxidizing method of making a layered superlattice m...

Ferroelectric and high dielectric constant transistors

Method for forming an integrated circuit

Interlayer oxide containing thin films for high dielectric constant...

Ferroelectric field effect transistor, memory utilizing same, and m...

Ferroelectric device with bismuth tantalate capping layer and metho...

Ferroelectric memory and method of operating same

Ferroelectric memory and method of operating same

Ferroelectric field effect transistor, memory utilizing same, and m...

Recovery of electronic properties in hydrogen-damaged ferroelectric...

Low temperature process for fabricating layered superlattice materi...

Recovery of electronic properties in process-damaged ferroelectrics...

Ferroelectric memory with ferroelectric thin film having thickness...

Multi-component electromagnetic wave absorption panels

Process for fabricating layered superlattice materials and AB0.sub....

Process for making an integrated circuit with high dielectric const...

Materials for electromagnetic wave absorption panels

Method for fabricating thin films of barium strontium titanate with...

Patents Applicationslast 30 patents

Ferroelectric and high dielectric constant integrated circuit capac...

Ferroelectric memory and method of operating same

Barrier layers for protecting metal oxides from hydrogen degradation

Ferroelectric composite material, method of making same and memory...

Ferroelectric and high dielectric constant integrated circuit capac...

Method of making layered superlattice material with ultra-thin top...

Low thermal budget fabrication of ferroelectric memory using RTP

Stacked memory cell and process of fabricating same

Stacked memory cell having diffusion barriers

Ferroelectric memory and method of operating same

Method of making layered superlattice material with improved micros...

Stacked memory cell having diffusion barriers

Stacked memory cell and process of fabricating same

Barrier layers for protecting metal oxides from hydrogen degradation

Interlayer oxide containing thin films for high dielectric constant...

Ferroelectric composite material, method of making same, and memory...

Iridium oxide diffusion barrier between local interconnect layer an...

Metal oxide thin films for high dielectric constant application

RECOVERY OF ELECTRONIC PROPERTIES IN HYDROGEN-DAMAGED FERROELECTRIC...