Vincent CHANG

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Utilization of electric field with isotropic development in photoli...
- Patent number 7,838,205
- Issue date Nov 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent Chang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Multi-metal-oxide high-K gate dielectrics
- Patent number 7,824,990
- Issue date Nov 2, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI liner modification method
- Patent number 7,361,572
- Issue date Apr 22, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nitride liner formation for shallow trench isolation
- Patent number 7,327,009
- Issue date Feb 5, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nitride liner formation for shallow trench isolation
- Patent number 7,176,138
- Issue date Feb 13, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature hydrogen annealing of a gate insulator layer to in...
- Patent number 7,166,525
- Issue date Jan 23, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for determining a component concentration of an i...
- Patent number 6,864,109
- Issue date Mar 8, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
STI LINER MODIFICATION METHOD
- Publication number 20080157266
- Publication date Jul 3, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZATION OF ELECTRIC FIELD WITH ISOTROPIC DEVELOPMENT IN PHOTOLI...
- Publication number 20080008967
- Publication date Jan 10, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent CHANG
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Semiconductor device having nitrided high-k gate dielectric and met...
- Publication number 20080001237
- Publication date Jan 3, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-metal-oxide high-k gate dielectrics
- Publication number 20070128736
- Publication date Jun 7, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE NITRIDE LINER FORMATION FOR SHALLOW TRENCH ISOLATION
- Publication number 20070105337
- Publication date May 10, 2007
- Taiwan Semiconductor Manufacturing Co., LTD
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI liner modification method
- Publication number 20060183292
- Publication date Aug 17, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective nitride liner formation for shallow trench isolation
- Publication number 20060099771
- Publication date May 11, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High temperature hydrogen annealing of a gate insulator layer to in...
- Publication number 20050159008
- Publication date Jul 21, 2005
- Taiwan Semiconductor Manufacturing Co.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DETERMINING A COMPONENT CONCENTRATION OF AN I...
- Publication number 20050019964
- Publication date Jan 27, 2005
- Vincent S. Chang
- G01 - MEASURING TESTING

Vincent CHANG

Person

Patents Grantslast 30 patents

Utilization of electric field with isotropic development in photoli...

Multi-metal-oxide high-K gate dielectrics

STI liner modification method

Selective nitride liner formation for shallow trench isolation

Selective nitride liner formation for shallow trench isolation

High temperature hydrogen annealing of a gate insulator layer to in...

Method and system for determining a component concentration of an i...

Patents Applicationslast 30 patents

STI LINER MODIFICATION METHOD

UTILIZATION OF ELECTRIC FIELD WITH ISOTROPIC DEVELOPMENT IN PHOTOLI...

Semiconductor device having nitrided high-k gate dielectric and met...

Multi-metal-oxide high-k gate dielectrics

SELECTIVE NITRIDE LINER FORMATION FOR SHALLOW TRENCH ISOLATION

STI liner modification method

Selective nitride liner formation for shallow trench isolation

High temperature hydrogen annealing of a gate insulator layer to in...

METHOD AND SYSTEM FOR DETERMINING A COMPONENT CONCENTRATION OF AN I...