Vincent Gambin

Person

Rancho Palos Verdes, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device passive thermal management
- Patent number 11,784,107
- Issue date Oct 10, 2023
- Northrop Grumman Systems Corporation
- John A. Starkovich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device passive thermal management
- Patent number 11,488,889
- Issue date Nov 1, 2022
- Northrop Grumman Systems Corporation
- John A. Starkovich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices using insulator-metal phase change materials...
- Patent number 11,018,296
- Issue date May 25, 2021
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices using insulator-metal phase change materials...
- Patent number 10,811,601
- Issue date Oct 20, 2020
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer-scale catalytic deposition of black phosphorus
- Patent number 10,727,050
- Issue date Jul 28, 2020
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-imprinting using high-pressure crystal phase transformations
- Patent number 10,497,564
- Issue date Dec 3, 2019
- Northrop Grumman Systems Corporation
- Vincent Gambin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Vertical cavity surface emitting laser with composite reflectors
- Patent number 9,735,545
- Issue date Aug 15, 2017
- Northrop Grumman Systems Corporation
- Yaochung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microfluidic impingement jet cooled embedded diamond GaN HEMT
- Patent number 9,484,284
- Issue date Nov 1, 2016
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Selective deposition of diamond in thermal vias
- Patent number 9,196,703
- Issue date Nov 24, 2015
- Northrop Grumman Systems Corporation
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AIN buffer N-polar GaN HEMT profile
- Patent number 8,710,511
- Issue date Apr 29, 2014
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct growth of diamond in backside vias for GaN HEMT devices
- Patent number 8,575,657
- Issue date Nov 5, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite passivation process for nitride FET
- Patent number 8,431,962
- Issue date Apr 30, 2013
- Northrop Grumman Systems Corporation
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit device having carbon nanotube fabrication from c...
- Patent number 7,893,423
- Issue date Feb 22, 2011
- Northrop Grumman Systems Corporation
- Vincent Gambin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Carbon nanotube fabrication from crystallography oriented catalyst
- Patent number 7,678,672
- Issue date Mar 16, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a nitride FET including passivation layers
- Patent number 7,632,726
- Issue date Dec 15, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growth of group III-V semiconductor material on a dielec...
- Patent number 7,084,040
- Issue date Aug 1, 2006
- Northrop Grumman Corp.
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER LIMITER WITH WAVEGUIDE HAVING AN LaCoO3 FILM
- Publication number 20240209491
- Publication date Jun 27, 2024
- Northrop Grumman Systems Corporation
- Rajashree Bhattacharya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LaCoO3 THIN FILM DEPOSITION BY DC METAL CO-SPUTTERING
- Publication number 20220364219
- Publication date Nov 17, 2022
- Northrop Grumman Systems Corporation
- Rajashree Bhattacharya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor Devices Using Insulator-Metal Phase Change Materials...
- Publication number 20200235293
- Publication date Jul 23, 2020
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF DIAMOND IN THERMAL VIAS
- Publication number 20150056763
- Publication date Feb 26, 2015
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES
- Publication number 20130248879
- Publication date Sep 26, 2013
- Northrop Grumman Systems Corporation
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlN BUFFER N-POLAR GaN HEMT PROFILE
- Publication number 20130026489
- Publication date Jan 31, 2013
- NORTHROP GRUMMAN SYSTEMS CORPORATION
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon nanotube fabrication from crystallography oriented catalyst
- Publication number 20100127240
- Publication date May 27, 2010
- Northrop Grumman Space & Mission Systems Corp.
- Vincent Gambin
- B82 - NANO-TECHNOLOGY
Information Patent Application
CARBON NANOTUBE FABRICATION FROM CRYSTALLOGRAPHY ORIENTED CATALYST
- Publication number 20100029063
- Publication date Feb 4, 2010
- Northrop Grumman Space & Mission Systems Corporation
- Vincent Gambin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Composite Passivation Process for Nitride FET
- Publication number 20090146224
- Publication date Jun 11, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Nitride FET Including Passivation Layers
- Publication number 20090148985
- Publication date Jun 11, 2009
- Northrop Grumman Space & Mission Systems Corp.
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protective layer in device fabrication
- Publication number 20080199993
- Publication date Aug 21, 2008
- Benjamin Heying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growth of group III-V semiconductor material on a dielec...
- Publication number 20050239274
- Publication date Oct 27, 2005
- Vincent Gambin
- H01 - BASIC ELECTRIC ELEMENTS

Vincent Gambin

Person

Patents Grantslast 30 patents

Semiconductor device passive thermal management

Semiconductor device passive thermal management

Semiconductor devices using insulator-metal phase change materials...

Semiconductor devices using insulator-metal phase change materials...

Wafer-scale catalytic deposition of black phosphorus

Nano-imprinting using high-pressure crystal phase transformations

Vertical cavity surface emitting laser with composite reflectors

Microfluidic impingement jet cooled embedded diamond GaN HEMT

Selective deposition of diamond in thermal vias

AIN buffer N-polar GaN HEMT profile

Direct growth of diamond in backside vias for GaN HEMT devices

Composite passivation process for nitride FET

Electrical circuit device having carbon nanotube fabrication from c...

Carbon nanotube fabrication from crystallography oriented catalyst

Method for fabricating a nitride FET including passivation layers

Method for growth of group III-V semiconductor material on a dielec...

Patents Applicationslast 30 patents

POWER LIMITER WITH WAVEGUIDE HAVING AN LaCoO3 FILM

LaCoO3 THIN FILM DEPOSITION BY DC METAL CO-SPUTTERING

Semiconductor Devices Using Insulator-Metal Phase Change Materials...

SELECTIVE DEPOSITION OF DIAMOND IN THERMAL VIAS

DIRECT GROWTH OF DIAMOND IN BACKSIDE VIAS FOR GAN HEMT DEVICES

AlN BUFFER N-POLAR GaN HEMT PROFILE

Carbon nanotube fabrication from crystallography oriented catalyst

CARBON NANOTUBE FABRICATION FROM CRYSTALLOGRAPHY ORIENTED CATALYST

Composite Passivation Process for Nitride FET

Method for Fabricating a Nitride FET Including Passivation Layers

Protective layer in device fabrication

Method for growth of group III-V semiconductor material on a dielec...