Vinh Hoang LUONG

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for sculpting spacer sidewall mask
- Patent number 10,260,150
- Issue date Apr 16, 2019
- Tokyo Electron Limited
- Vinh Luong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma treatment method to meet line edge roughness and other integ...
- Patent number 9,978,563
- Issue date May 22, 2018
- Tokyo Electron Limited
- Vinh Luong
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Trimming inorganic resists with selected etchant gas mixture and mo...
- Patent number 9,899,219
- Issue date Feb 20, 2018
- Tokyo Electron Limited
- Vinh Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential metal gate etching process
- Patent number 8,501,628
- Issue date Aug 6, 2013
- Tokyo Electron Limited
- Vinh Hoang Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching silicon with selectivity to silicon-germanium
- Patent number 8,389,416
- Issue date Mar 5, 2013
- Tokyo Electron Limited
- Vinh Hoang Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process for controlling pattern CD and integrity in multi-laye...
- Patent number 8,334,083
- Issue date Dec 18, 2012
- Tokyo Electron Limited
- Vinh Hoang Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench liner removal process
- Patent number 8,313,661
- Issue date Nov 20, 2012
- Tokyo Electron Limited
- Vinh Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching a silicon-containing ARC layer to reduce roughne...
- Patent number 7,998,872
- Issue date Aug 16, 2011
- Tokyo Electron Limited
- Vinh Hoang Luong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Systems and Methods for Patterning Features in Tantalum Nitride (Ta...
- Publication number 20190096672
- Publication date Mar 28, 2019
- TOKYO ELECTRON LIMITED
- Vinh Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SCULPTING SPACER SIDEWALL MASK
- Publication number 20180187308
- Publication date Jul 5, 2018
- TOKYO ELECTRON LIMITED
- Vinh Luong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Trimming Inorganic Resists With Selected Etchant Gas Mixture And Mo...
- Publication number 20170243744
- Publication date Aug 24, 2017
- TOKYO ELECTRON LIMITED
- Vinh Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Treatment Method to Meet Line Edge Roughness and Other Integ...
- Publication number 20170213700
- Publication date Jul 27, 2017
- TOKYO ELECTRON LIMITED
- Vinh Luong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SCULPTING SPACER SIDEWALL MASK
- Publication number 20170053793
- Publication date Feb 23, 2017
- TOKYO ELECTRON LIMITED
- Vinh Luong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ETCH PROCESS FOR CONTROLLING PATTERN CD AND INTEGRITY IN MULTI-LAYE...
- Publication number 20120244458
- Publication date Sep 27, 2012
- TOKYO ELECTRON LIMITED
- Vinh Hoang LUONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A FULL METAL GATE STRUCTURE
- Publication number 20120244693
- Publication date Sep 27, 2012
- TOKYO ELECTRON LIMITED
- Vinh Hoang LUONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR ETCHING SILICON WITH SELECTIVITY TO SILICON-GERMANIUM
- Publication number 20120129354
- Publication date May 24, 2012
- TOKYO ELECTRON LIMITED
- Vinh LUONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Differential metal gate etching process
- Publication number 20110237084
- Publication date Sep 29, 2011
- TOKYO ELECTRON LIMITED
- Vinh Hoang LUONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep trench liner removal process
- Publication number 20110108517
- Publication date May 12, 2011
- TOKYO ELECTRON LIMITED
- Vinh LUONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING A SILICON-CONTAINING ARC LAYER TO REDUCE ROUGHNE...
- Publication number 20090197420
- Publication date Aug 6, 2009
- TOKYO ELECTRON LIMITED
- Vinh Hoang Luong
- H01 - BASIC ELECTRIC ELEMENTS

Vinh Hoang LUONG

Person

Patents Grantslast 30 patents

Method and system for sculpting spacer sidewall mask

Plasma treatment method to meet line edge roughness and other integ...

Trimming inorganic resists with selected etchant gas mixture and mo...

Differential metal gate etching process

Process for etching silicon with selectivity to silicon-germanium

Etch process for controlling pattern CD and integrity in multi-laye...

Deep trench liner removal process

Method for etching a silicon-containing ARC layer to reduce roughne...

Patents Applicationslast 30 patents

Systems and Methods for Patterning Features in Tantalum Nitride (Ta...

METHOD AND SYSTEM FOR SCULPTING SPACER SIDEWALL MASK

Trimming Inorganic Resists With Selected Etchant Gas Mixture And Mo...

Plasma Treatment Method to Meet Line Edge Roughness and Other Integ...

METHOD AND SYSTEM FOR SCULPTING SPACER SIDEWALL MASK

ETCH PROCESS FOR CONTROLLING PATTERN CD AND INTEGRITY IN MULTI-LAYE...

METHOD FOR PATTERNING A FULL METAL GATE STRUCTURE

PROCESS FOR ETCHING SILICON WITH SELECTIVITY TO SILICON-GERMANIUM

Differential metal gate etching process

Deep trench liner removal process

METHOD FOR ETCHING A SILICON-CONTAINING ARC LAYER TO REDUCE ROUGHNE...