Vinod Adivarahan

Person

Columbia, SC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultraviolet light emitting devices and methods of fabrication
- Patent number 9,985,177
- Issue date May 29, 2018
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for high frequency, high power group III nitr...
- Patent number 9,882,039
- Issue date Jan 30, 2018
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and template for growing semiconductors
- Patent number 9,859,457
- Issue date Jan 2, 2018
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconducto...
- Patent number 9,543,425
- Issue date Jan 10, 2017
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively area regrown III-nitride high electron mobility transistor
- Patent number 9,343,563
- Issue date May 17, 2016
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconducto...
- Patent number 9,343,544
- Issue date May 17, 2016
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utlraviolet light emitting devices and methods of fabrication
- Patent number 9,331,240
- Issue date May 3, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power ultraviolet light emitting diode with superlattice
- Patent number 9,142,714
- Issue date Sep 22, 2015
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively doped semi-conductors and methods of making the same
- Patent number 9,059,081
- Issue date Jun 16, 2015
- University of South Carolina
- Asif Khan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Selectively area regrown III-nitride high electron mobility transistor
- Patent number 8,796,097
- Issue date Aug 5, 2014
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting diode with AC voltage operation
- Patent number 8,698,191
- Issue date Apr 15, 2014
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,692,293
- Issue date Apr 8, 2014
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power ultraviolet light sources and method of fabricating the...
- Patent number 8,680,551
- Issue date Mar 25, 2014
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer barrier III-nitride transistor for high voltage electronics
- Patent number 8,541,817
- Issue date Sep 24, 2013
- Nitek, Inc.
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultraviolet light emitting diode with AC voltage operation
- Patent number 8,507,941
- Issue date Aug 13, 2013
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for high frequency, high power group III nitr...
- Patent number 8,476,125
- Issue date Jul 2, 2013
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance ultraviolet light emitting device and method of fabr...
- Patent number 8,415,654
- Issue date Apr 9, 2013
- Nitek, Inc.
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital oxide deposition of SiO2 layers on wafers
- Patent number 8,372,697
- Issue date Feb 12, 2013
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro-pixel ultraviolet light emitting diode
- Patent number 8,354,663
- Issue date Jan 15, 2013
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient thermal management and packaging for group III nitride ba...
- Patent number 8,354,687
- Issue date Jan 15, 2013
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed selective area lateral epitaxy for growth of III-nitride mat...
- Patent number 8,338,273
- Issue date Dec 25, 2012
- University of South Carolina
- M. Asif Khan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,318,562
- Issue date Nov 27, 2012
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20160276533
- Publication date Sep 22, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconducto...
- Publication number 20160240647
- Publication date Aug 18, 2016
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconducto...
- Publication number 20150270382
- Publication date Sep 24, 2015
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor and Template for Growing Semiconductors
- Publication number 20150263221
- Publication date Sep 17, 2015
- Nitek, Inc.
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
- Publication number 20150001550
- Publication date Jan 1, 2015
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Fabrication Technique for High Frequency, High Power Group II...
- Publication number 20140015011
- Publication date Jan 16, 2014
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
- Publication number 20130313613
- Publication date Nov 28, 2013
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION
- Publication number 20130256631
- Publication date Oct 3, 2013
- ASIF KHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20130056796
- Publication date Mar 7, 2013
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIGITAL OXIDE DEPOSITION OF SIO2 LAYERS ON WAFERS
- Publication number 20130017689
- Publication date Jan 17, 2013
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE
- Publication number 20120145994
- Publication date Jun 14, 2012
- NITEK, INC
- Vinod ADIVARAHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS
- Publication number 20110108887
- Publication date May 12, 2011
- Nitek, Inc.
- Qhalid Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION
- Publication number 20110073838
- Publication date Mar 31, 2011
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABR...
- Publication number 20110012089
- Publication date Jan 20, 2011
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICRO-PIXEL ULTRAVIOLET LIGHT EMITTING DIODE
- Publication number 20100264401
- Publication date Oct 21, 2010
- Vinod Adivarahan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME
- Publication number 20100187545
- Publication date Jul 29, 2010
- University of South Carolina
- Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MAT...
- Publication number 20100140745
- Publication date Jun 10, 2010
- M. Asif Khan
- C30 - CRYSTAL GROWTH
Information Patent Application
NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP II...
- Publication number 20100102359
- Publication date Apr 29, 2010
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20100032647
- Publication date Feb 11, 2010
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20090090984
- Publication date Apr 9, 2009
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS

Vinod Adivarahan

Person

Patents Grantslast 30 patents

Ultraviolet light emitting devices and methods of fabrication

Fabrication technique for high frequency, high power group III nitr...

Semiconductor and template for growing semiconductors

Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconducto...

Selectively area regrown III-nitride high electron mobility transistor

Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconducto...

Utlraviolet light emitting devices and methods of fabrication

High power ultraviolet light emitting diode with superlattice

Selectively doped semi-conductors and methods of making the same

Selectively area regrown III-nitride high electron mobility transistor

Ultraviolet light emitting diode with AC voltage operation

Method to increase breakdown voltage of semiconductor devices

High power ultraviolet light sources and method of fabricating the...

Multilayer barrier III-nitride transistor for high voltage electronics

Ultraviolet light emitting diode with AC voltage operation

Fabrication technique for high frequency, high power group III nitr...

Low resistance ultraviolet light emitting device and method of fabr...

Digital oxide deposition of SiO2 layers on wafers

Micro-pixel ultraviolet light emitting diode

Efficient thermal management and packaging for group III nitride ba...

Pulsed selective area lateral epitaxy for growth of III-nitride mat...

Method to increase breakdown voltage of semiconductor devices

Patents Applicationslast 30 patents

ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconducto...

Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconducto...

Semiconductor and Template for Growing Semiconductors

Selectively Area Regrown III-Nitride High Electron Mobility Transistor

Novel Fabrication Technique for High Frequency, High Power Group II...

Selectively Area Regrown III-Nitride High Electron Mobility Transistor

ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION

Novel Method to Increase Breakdown Voltage of Semiconductor Devices

DIGITAL OXIDE DEPOSITION OF SIO2 LAYERS ON WAFERS

STABLE HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODE

MULTILAYER BARRIER III-NITRIDE TRANSISTOR FOR HIGH VOLTAGE ELECTRONICS

ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION

LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABR...

MICRO-PIXEL ULTRAVIOLET LIGHT EMITTING DIODE

SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME

PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MAT...

NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP II...

UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

Novel Method to Increase Breakdown Voltage of Semiconductor Devices