Viorel C. Ontalus

Person

Danbury, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor integration on a silicon-on-insulator substrate
- Patent number 12,113,070
- Issue date Oct 8, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 11,916,135
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator field effect transistor with performance...
- Patent number 11,810,951
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with base horizontally displaced from collector
- Patent number 11,728,380
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with elevated extrinsic base and methods to form...
- Patent number 11,588,043
- Issue date Feb 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate bipolar transistor with enhanced frequency response,...
- Patent number 11,404,563
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES U.S. INC.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with marker layer
- Patent number 11,217,685
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor device with piezoelectric material posi...
- Patent number 11,056,533
- Issue date Jul 6, 2021
- GLOBALFOUNDRIES U.S. INC.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement body FinFET for improved junction profile with gate sel...
- Patent number 10,374,090
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of modulating the morphology of epitaxial semiconductor mat...
- Patent number 9,953,873
- Issue date Apr 24, 2018
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement body FinFET for improved junction profile with gate sel...
- Patent number 9,761,720
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer for modulating Vt across devices
- Patent number 9,722,045
- Issue date Aug 1, 2017
- GLOBALFOUNDRIES Inc.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact resistance optimization via EPI growth engineering
- Patent number 9,673,295
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Annie Levesque
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with source/drain regions of reduced topog...
- Patent number 9,536,989
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,385,237
- Issue date Jul 5, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including SIU butted junction to reduce short-...
- Patent number 9,349,749
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned device with enhanced stress and methods of manufacture
- Patent number 9,293,593
- Issue date Mar 22, 2016
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,231,108
- Issue date Jan 5, 2016
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures and methods of manufacture
- Patent number 9,171,844
- Issue date Oct 27, 2015
- GlobalFoundries U.S. 2 LLC
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including SOI butted junction to reduce short-...
- Patent number 9,165,944
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted SOI junction isolation structures and devices and method of...
- Patent number 9,105,718
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-gate, source/drain strain layer formation
- Patent number 9,059,286
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for increasing strain in a device
- Patent number 9,059,285
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,059,292
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming CMOS with close proximity stressors
- Patent number 9,041,119
- Issue date May 26, 2015
- International Business Machines Corporation
- Desmond J. Donegan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods of manufacturing the same
- Patent number 9,013,008
- Issue date Apr 21, 2015
- International Business Machines Corporation
- Xi Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned device with enhanced stress and methods of manufacture
- Patent number 9,006,052
- Issue date Apr 14, 2015
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing leakage current and junction capacitance in CMOS transis...
- Patent number 8,993,395
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230395607
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20230246093
- Publication date Aug 3, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Viorel ONTALUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...
- Publication number 20230197783
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH BASE HORIZONTALLY DISPLACED FROM COLLECTOR
- Publication number 20220416029
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM...
- Publication number 20220336646
- Publication date Oct 20, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE BIPOLAR TRANSISTOR WITH ENHANCED FREQUENCY RESPONSE,...
- Publication number 20210202722
- Publication date Jul 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
- Publication number 20210091214
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Herbert HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION
- Publication number 20180197734
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Bhupesh CHANDRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH LOW RESISTANCE FINS
- Publication number 20180108654
- Publication date Apr 19, 2018
- GLOBALFOUNDRIES, Inc.
- Viorel C. ONTALUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL
- Publication number 20170345719
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SEL...
- Publication number 20170345934
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES INC.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SEL...
- Publication number 20170154995
- Publication date Jun 1, 2017
- GLOBALFOUNDRIES INC.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES
- Publication number 20170117387
- Publication date Apr 27, 2017
- GLOBALFOUNDRIES INC.
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SOI BUTTED JUNCTION TO REDUCE SHORT-...
- Publication number 20150364491
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OPTIMIZATION VIA EPI GROWTH ENGINEERING
- Publication number 20150349068
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Annie Levesque
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...
- Publication number 20150221724
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SOI BUTTED JUNCTION TO REDUCE SHORT-...
- Publication number 20150097243
- Publication date Apr 9, 2015
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...
- Publication number 20150044846
- Publication date Feb 12, 2015
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES AND METHODS OF MANUFACTURE
- Publication number 20150014782
- Publication date Jan 15, 2015
- International Business Machines Corporation
- Unoh Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION
- Publication number 20140213029
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...
- Publication number 20140203359
- Publication date Jul 24, 2014
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20140034970
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Xi LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source and Drain Doping Profile Control Employing Carbon-Doped Semi...
- Publication number 20140035000
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CMOS WITH CLOSE PROXIMITY STRESSORS
- Publication number 20130295740
- Publication date Nov 7, 2013
- GLOBALFOUNDRIES INC.
- Desmond J. Donegan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...
- Publication number 20130288440
- Publication date Oct 31, 2013
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20130175547
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES, INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20130161759
- Publication date Jun 27, 2013
- GlobalFoundries, Inc.
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE
- Publication number 20130161649
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Viorel C. Ontalus

Person

Patents Grantslast 30 patents

Transistor integration on a silicon-on-insulator substrate

Bipolar transistor

Semiconductor-on-insulator field effect transistor with performance...

Bipolar transistor with base horizontally displaced from collector

Bipolar transistor with elevated extrinsic base and methods to form...

Insulated-gate bipolar transistor with enhanced frequency response,...

Heterojunction bipolar transistor with marker layer

Bipolar junction transistor device with piezoelectric material posi...

Replacement body FinFET for improved junction profile with gate sel...

Methods of modulating the morphology of epitaxial semiconductor mat...

Replacement body FinFET for improved junction profile with gate sel...

Buffer layer for modulating Vt across devices

Contact resistance optimization via EPI growth engineering

Field-effect transistors with source/drain regions of reduced topog...

Source and drain doping profile control employing carbon-doped semi...

Semiconductor device including SIU butted junction to reduce short-...

Self aligned device with enhanced stress and methods of manufacture

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Source and drain doping profile control employing carbon-doped semi...

Gate structures and methods of manufacture

Semiconductor device including SOI butted junction to reduce short-...

Butted SOI junction isolation structures and devices and method of...

Pre-gate, source/drain strain layer formation

Structure and method for increasing strain in a device

Source and drain doping profile control employing carbon-doped semi...

Forming CMOS with close proximity stressors

Semiconductor structures and methods of manufacturing the same

Self aligned device with enhanced stress and methods of manufacture

Minimizing leakage current and junction capacitance in CMOS transis...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Patents Applicationslast 30 patents

TRANSISTOR INTEGRATION ON A SILICON-ON-INSULATOR SUBSTRATE

BIPOLAR TRANSISTOR

SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...

BIPOLAR TRANSISTOR WITH BASE HORIZONTALLY DISPLACED FROM COLLECTOR

BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM...

INSULATED-GATE BIPOLAR TRANSISTOR WITH ENHANCED FREQUENCY RESPONSE,...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER

BUFFER LAYER TO INHIBIT WORMHOLES IN SEMICONDUCTOR FABRICATION

FINFET DEVICE WITH LOW RESISTANCE FINS

MODULATION OF THE MORPHOLOGY OF EPITAXIAL SEMICONDUCTOR MATERIAL

REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SEL...

REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SEL...

BUFFER LAYER FOR MODULATING Vt ACROSS DEVICES

SEMICONDUCTOR DEVICE INCLUDING SOI BUTTED JUNCTION TO REDUCE SHORT-...

CONTACT RESISTANCE OPTIMIZATION VIA EPI GROWTH ENGINEERING

SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...

SEMICONDUCTOR DEVICE INCLUDING SOI BUTTED JUNCTION TO REDUCE SHORT-...

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

SOURCE AND DRAIN DOPING PROFILE CONTROL EMPLOYING CARBON-DOPED SEMI...

GATE STRUCTURES AND METHODS OF MANUFACTURE

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

PRE-GATE, SOURCE/DRAIN STRAIN LAYER FORMATION

BUTTED SOI JUNCTION ISOLATION STRUCTURES AND DEVICES AND METHOD OF...

SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Source and Drain Doping Profile Control Employing Carbon-Doped Semi...

FORMING CMOS WITH CLOSE PROXIMITY STRESSORS

MINIMIZING LEAKAGE CURRENT AND JUNCTION CAPACITANCE IN CMOS TRANSIS...

FIELD EFFECT TRANSISTOR DEVICE

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE