Vipindas Pala

Person

Morrisville, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thin wafer process for improved crystal utilization of wide bandgap...
- Patent number 12,283,482
- Issue date Apr 22, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number RE49913
- Issue date Apr 9, 2024
- Wolfspeed, Inc.
- Vipindas Pala
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor devices formed via ion implantati...
- Patent number 11,791,378
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors with breakdown voltage clamps
- Patent number 11,705,485
- Issue date Jul 18, 2023
- Maxim Integrated Products, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structure with buried channel and resurf region...
- Patent number 11,682,722
- Issue date Jun 20, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide planar MOSFET with wave-shaped channel regions
- Patent number 11,605,713
- Issue date Mar 14, 2023
- SEMIQ INCORPORATED
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-transistor device including first and second LDMOS transistor...
- Patent number 11,557,588
- Issue date Jan 17, 2023
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET with source ballasting
- Patent number 11,552,078
- Issue date Jan 10, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,545,585
- Issue date Jan 3, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor with integrated high voltage capac...
- Patent number 11,521,965
- Issue date Dec 6, 2022
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide trench semiconductor device
- Patent number 11,245,016
- Issue date Feb 8, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor structure with buried channel and resurf region...
- Patent number 11,211,484
- Issue date Dec 28, 2021
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors with breakdown voltage clamps
- Patent number 11,195,909
- Issue date Dec 7, 2021
- Maxim Integrated Products, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Configurations of composite devices comprising of a normally-on FET...
- Patent number 11,088,688
- Issue date Aug 10, 2021
- LOGISIC DEVICES, INC.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power semiconductor devices formed via ion implantat...
- Patent number 11,075,264
- Issue date Jul 27, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of HVLDMOS with shared isolation region
- Patent number 11,069,804
- Issue date Jul 20, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-transistor device including first and second LDMOS transistor...
- Patent number 10,964,694
- Issue date Mar 30, 2021
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide planar MOSFET with wave-shaped channel regions
- Patent number 10,950,695
- Issue date Mar 16, 2021
- SEMIQ INCORPORATED
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seminconductor device with spreading layer
- Patent number 10,950,719
- Issue date Mar 16, 2021
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number RE48380
- Issue date Jan 5, 2021
- Cree, Inc.
- Vipindas Pala
Information Patent Grant
Monolithically integrated vertical power transistor and bypass diode
- Patent number 10,868,169
- Issue date Dec 15, 2020
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET with source ballasting
- Patent number 10,818,662
- Issue date Oct 27, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,784,338
- Issue date Sep 22, 2020
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a power transistor device and bypass...
- Patent number 10,600,903
- Issue date Mar 24, 2020
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled ion implantation into silicon carbide using channeling a...
- Patent number 10,217,824
- Issue date Feb 26, 2019
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,134,834
- Issue date Nov 20, 2018
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming buried junction devices in silicon carbide using...
- Patent number 10,103,230
- Issue date Oct 16, 2018
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices having superjunction...
- Patent number 9,972,677
- Issue date May 15, 2018
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...
- Publication number 20240072160
- Publication date Feb 29, 2024
- Monolithic Power Systems, Inc.
- Haifeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055511
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055512
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055514
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055513
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055473
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230098516
- Publication date Mar 30, 2023
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230047121
- Publication date Feb 16, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER INDUCED SEMICONDUCTOR WAFER PATTERNING
- Publication number 20220406601
- Publication date Dec 22, 2022
- Monolithic Power Systems, Inc.
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR WITH INTEGRATED HIGH VOLTAGE CAPAC...
- Publication number 20220344326
- Publication date Oct 27, 2022
- MONOLITHIC POWER SYSTEMS,INC.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF WIDE BANDGAP DEVICES
- Publication number 20220336215
- Publication date Oct 20, 2022
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR STRUCTURE WITH BURIED CHANNEL AND RESURF REGION...
- Publication number 20220093784
- Publication date Mar 24, 2022
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTORS WITH BREAKDOWN VOLTAGE CLAMPS
- Publication number 20220093730
- Publication date Mar 24, 2022
- Maxim Integrated Products, Inc.
- Vijay Parthasarathy
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Single Sided Channel Mesa Power Junction Field Effect Transistor
- Publication number 20220059706
- Publication date Feb 24, 2022
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...
- Publication number 20210367029
- Publication date Nov 25, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRENCH SEMICONDUCTOR DEVICE
- Publication number 20210242319
- Publication date Aug 5, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TRANSISTOR DEVICES
- Publication number 20210217748
- Publication date Jul 15, 2021
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Planar MOSFET With Wave-Shaped Channel Regions
- Publication number 20210143256
- Publication date May 13, 2021
- SemiQ Incorporated
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET WITH SOURCE BALLASTING
- Publication number 20210013202
- Publication date Jan 14, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURATIONS OF COMPOSITE DEVICES COMPRISING OF A NORMALLY-ON FET...
- Publication number 20200259489
- Publication date Aug 13, 2020
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR STRUCTURE WITH BURIED CHANNEL AND RESURF REGION...
- Publication number 20200259012
- Publication date Aug 13, 2020
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET WITH SOURCE BALLASTING
- Publication number 20200091147
- Publication date Mar 19, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF HVLDMOS WITH SHARED ISOLATION REGION
- Publication number 20200075759
- Publication date Mar 5, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTORS WITH BREAKDOWN VOLTAGE CLAMPS
- Publication number 20190259830
- Publication date Aug 22, 2019
- Maxim Integrated Products, Inc.
- Vijay Parthasarathy
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
MULTI-TRANSISTOR DEVICES
- Publication number 20190259751
- Publication date Aug 22, 2019
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS
- Publication number 20190067414
- Publication date Feb 28, 2019
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled Ion Implantation into Silicon Carbide Using Channeling a...
- Publication number 20180069083
- Publication date Mar 8, 2018
- Cree, Inc.
- Alexander V. Suvorov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...
- Publication number 20170345891
- Publication date Nov 30, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20170092715
- Publication date Mar 30, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20170084700
- Publication date Mar 23, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS

Vipindas Pala

Person

Patents Grantslast 30 patents

Thin wafer process for improved crystal utilization of wide bandgap...

Single sided channel mesa power junction field effect transistor

Vertical power transistor device

Single sided channel mesa power junction field effect transistor

Superjunction power semiconductor devices formed via ion implantati...

LDMOS transistors with breakdown voltage clamps

Vertical transistor structure with buried channel and resurf region...

Silicon carbide planar MOSFET with wave-shaped channel regions

Multi-transistor device including first and second LDMOS transistor...

Silicon carbide MOSFET with source ballasting

Single sided channel mesa power junction field effect transistor

Junction field effect transistor with integrated high voltage capac...

Silicon carbide trench semiconductor device

Vertical transistor structure with buried channel and resurf region...

LDMOS transistors with breakdown voltage clamps

Configurations of composite devices comprising of a normally-on FET...

Super junction power semiconductor devices formed via ion implantat...

Integration of HVLDMOS with shared isolation region

Multi-transistor device including first and second LDMOS transistor...

Silicon carbide planar MOSFET with wave-shaped channel regions

Seminconductor device with spreading layer

Vertical power transistor device

Monolithically integrated vertical power transistor and bypass diode

Silicon carbide MOSFET with source ballasting

Field effect transistor devices with buried well protection regions

Semiconductor device including a power transistor device and bypass...

Controlled ion implantation into silicon carbide using channeling a...

Field effect transistor devices with buried well protection regions

Methods of forming buried junction devices in silicon carbide using...

Methods of forming power semiconductor devices having superjunction...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

LASER INDUCED SEMICONDUCTOR WAFER PATTERNING

JUNCTION FIELD EFFECT TRANSISTOR WITH INTEGRATED HIGH VOLTAGE CAPAC...

FABRICATION OF WIDE BANDGAP DEVICES

VERTICAL TRANSISTOR STRUCTURE WITH BURIED CHANNEL AND RESURF REGION...

LDMOS TRANSISTORS WITH BREAKDOWN VOLTAGE CLAMPS

Single Sided Channel Mesa Power Junction Field Effect Transistor

SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...

SILICON CARBIDE TRENCH SEMICONDUCTOR DEVICE

MULTI-TRANSISTOR DEVICES

Silicon Carbide Planar MOSFET With Wave-Shaped Channel Regions

SILICON CARBIDE MOSFET WITH SOURCE BALLASTING

CONFIGURATIONS OF COMPOSITE DEVICES COMPRISING OF A NORMALLY-ON FET...

VERTICAL TRANSISTOR STRUCTURE WITH BURIED CHANNEL AND RESURF REGION...

SILICON CARBIDE MOSFET WITH SOURCE BALLASTING

INTEGRATION OF HVLDMOS WITH SHARED ISOLATION REGION

LDMOS TRANSISTORS WITH BREAKDOWN VOLTAGE CLAMPS

MULTI-TRANSISTOR DEVICES

FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS

Controlled Ion Implantation into Silicon Carbide Using Channeling a...

SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...

Field Effect Transistor Devices with Buried Well Protection Regions

Methods of Forming Buried Junction Devices in Silicon Carbide Using...