Viraj Y. Sardesai

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Middle of line structures
- Patent number 10,978,566
- Issue date Apr 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust gate cap for protecting a gate from downstream metallization...
- Patent number 10,916,431
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Raghuveer Reddy Patlolla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,741,554
- Issue date Aug 11, 2020
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle of line structures
- Patent number 10,580,875
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 10,262,996
- Issue date Apr 16, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 10,083,865
- Issue date Sep 25, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for capping cobalt contacts
- Patent number 10,043,708
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Viraj Sardesai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of metal resistor and e-fuse
- Patent number 9,997,411
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Cung Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact first replacement metal gate
- Patent number 9,985,104
- Issue date May 29, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 9,929,047
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,679,993
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with graphene nanoribbons
- Patent number 9,647,124
- Issue date May 9, 2017
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Third type of metal gate stack for CMOS devices
- Patent number 9,634,006
- Issue date Apr 25, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,601,380
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion-controlled oxygen depletion of semiconductor contact inte...
- Patent number 9,553,157
- Issue date Jan 24, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to suppress finFET heating
- Patent number 9,530,684
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,515,168
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact first replacement metal gate
- Patent number 9,496,362
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial spacer for increasing self aligned contact process margins
- Patent number 9,496,368
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Directional chemical oxide etch technique
- Patent number 9,472,415
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion-controlled oxygen depletion of semiconductor contact inte...
- Patent number 9,397,181
- Issue date Jul 19, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,391,175
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to suppress FinFET heating
- Patent number 9,368,493
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin end spacer for preventing merger of raised active regions
- Patent number 9,349,836
- Issue date May 24, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dielectric spacer deposition for exposing sidewalls of a...
- Patent number 9,331,166
- Issue date May 3, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact structure
- Patent number 9,324,709
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with graphene nanoribbons
- Patent number 9,318,323
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of metal resistor and e-fuse
- Patent number 9,312,185
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Cung Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of air-gap spacer in transistor
- Patent number 9,305,835
- Issue date Apr 5, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupling of gate conductor line and active region in semicond...
- Patent number 9,263,457
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Viraj Y. Sardesai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
ROBUST GATE CAP FOR PROTECTING A GATE FROM DOWNSTREAM METALLIZATION...
- Publication number 20200335345
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Raghuveer Reddy Patlolla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURES
- Publication number 20200152749
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE STRUCTURES
- Publication number 20190221650
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20190206866
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS
- Publication number 20180277427
- Publication date Sep 27, 2018
- GLOBALFOUNDRIES INC.
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED EFUSE
- Publication number 20180166402
- Publication date Jun 14, 2018
- GLOBALFOUNDRIES INC.
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCAPSULATION OF COBALT METALLIZATION
- Publication number 20180130702
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Suraj K. Patil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS
- Publication number 20180130703
- Publication date May 10, 2018
- Viraj SARDESAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20180068893
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20170229458
- Publication date Aug 10, 2017
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FIRST REPLACEMENT METAL GATE
- Publication number 20170194452
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20160379882
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING
- Publication number 20160284586
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Emre ALPTEKIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160284598
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GRAPHENE NANORIBBONS
- Publication number 20160190344
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS
- Publication number 20160181392
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035875
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035864
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20160035876
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION-CONTROLLED OXYGEN DEPLETION OF SEMICONDUCTOR CONTACT INTE...
- Publication number 20160027889
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING
- Publication number 20160013184
- Publication date Jan 14, 2016
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF METAL RESISTOR AND E-FUSE
- Publication number 20150364419
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Cung Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF METAL RESISTOR AND E-FUSE
- Publication number 20150325483
- Publication date Nov 12, 2015
- International Business Machines Corporation
- Cung Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTIONAL CHEMICAL OXIDE ETCH TECHNIQUE
- Publication number 20150318184
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION-CONTROLLED OXYGEN DEPLETION OF SEMICONDUCTOR CONTACT INTE...
- Publication number 20150270179
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DIELECTRIC SPACER DEPOSITION FOR EXPOSING SIDEWALLS OF A...
- Publication number 20150270365
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL FUSE WITH BOTTOM CONTACTS
- Publication number 20150255393
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES
- Publication number 20150249086
- Publication date Sep 3, 2015
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF AIR-GAP SPACER IN TRANSISTOR
- Publication number 20150243544
- Publication date Aug 27, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS
- Publication number 20150200291
- Publication date Jul 16, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS

Viraj Y. Sardesai

Person

Patents Grantslast 30 patents

Middle of line structures

Robust gate cap for protecting a gate from downstream metallization...

Third type of metal gate stack for CMOS devices

Middle of line structures

Third type of metal gate stack for CMOS devices

Partial spacer for increasing self aligned contact process margins

Structure and method for capping cobalt contacts

Formation of metal resistor and e-fuse

Contact first replacement metal gate

Partial spacer for increasing self aligned contact process margins

Fin end spacer for preventing merger of raised active regions

Semiconductor devices with graphene nanoribbons

Third type of metal gate stack for CMOS devices

Fin end spacer for preventing merger of raised active regions

Diffusion-controlled oxygen depletion of semiconductor contact inte...

Method and structure to suppress finFET heating

Fin end spacer for preventing merger of raised active regions

Contact first replacement metal gate

Partial spacer for increasing self aligned contact process margins

Directional chemical oxide etch technique

Diffusion-controlled oxygen depletion of semiconductor contact inte...

Fin end spacer for preventing merger of raised active regions

Method and structure to suppress FinFET heating

Fin end spacer for preventing merger of raised active regions

Selective dielectric spacer deposition for exposing sidewalls of a...

Self-aligned gate contact structure

Semiconductor devices with graphene nanoribbons

Formation of metal resistor and e-fuse

Formation of air-gap spacer in transistor

Cross-coupling of gate conductor line and active region in semicond...

Patents Applicationslast 30 patents

ROBUST GATE CAP FOR PROTECTING A GATE FROM DOWNSTREAM METALLIZATION...

MIDDLE OF LINE STRUCTURES

MIDDLE OF LINE STRUCTURES

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS

INTEGRATED EFUSE

ENCAPSULATION OF COBALT METALLIZATION

STRUCTURE AND METHOD FOR CAPPING COBALT CONTACTS

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

CONTACT FIRST REPLACEMENT METAL GATE

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

SEMICONDUCTOR DEVICES WITH GRAPHENE NANORIBBONS

PARTIAL SPACER FOR INCREASING SELF ALIGNED CONTACT PROCESS MARGINS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

DIFFUSION-CONTROLLED OXYGEN DEPLETION OF SEMICONDUCTOR CONTACT INTE...

METHOD AND STRUCTURE TO SUPPRESS FINFET HEATING

FORMATION OF METAL RESISTOR AND E-FUSE

FORMATION OF METAL RESISTOR AND E-FUSE

DIRECTIONAL CHEMICAL OXIDE ETCH TECHNIQUE

DIFFUSION-CONTROLLED OXYGEN DEPLETION OF SEMICONDUCTOR CONTACT INTE...

SELECTIVE DIELECTRIC SPACER DEPOSITION FOR EXPOSING SIDEWALLS OF A...

ELECTRICAL FUSE WITH BOTTOM CONTACTS

THIRD TYPE OF METAL GATE STACK FOR CMOS DEVICES

FORMATION OF AIR-GAP SPACER IN TRANSISTOR

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS