Virat Vasav Mehta

Person

Menands, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selectively biasing magnetoresistive random-access memory cells
- Patent number 11,942,126
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-orbit-torque magnetoresistive random-access memory
- Patent number 11,793,001
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Eric Raymond Evarts
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM containing magnetic top contact
- Patent number 11,665,974
- Issue date May 30, 2023
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered magnetic free layer structure in magnetic tunnel junct...
- Patent number 11,226,252
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double magnetic tunnel junction device, formed by UVH wafer bonding
- Patent number 11,114,607
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosecond non-destructively erasable magnetoresistive random-acces...
- Patent number 11,114,146
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...
- Patent number 10,942,072
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY
- Publication number 20230046923
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Eric Raymond Evarts
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVELY BIASING MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELLS
- Publication number 20220383921
- Publication date Dec 1, 2022
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM CONTAINING MAGNETIC TOP CONTACT
- Publication number 20220238794
- Publication date Jul 28, 2022
- International Business Machines Corporation
- Michael Rizzolo
- G11 - INFORMATION STORAGE
Information Patent Application
EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM
- Publication number 20220180911
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE, FORMED BY UVH WAFER BONDING
- Publication number 20210159389
- Publication date May 27, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCES...
- Publication number 20210158850
- Publication date May 27, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...
- Publication number 20200217735
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Virat Vasav Mehta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...
- Publication number 20200158582
- Publication date May 21, 2020
- International Business Machines Corporation
- Chandrasekharan Kothandaraman
- G01 - MEASURING TESTING

Virat Vasav Mehta

Person

Patents Grantslast 30 patents

Selectively biasing magnetoresistive random-access memory cells

Spin-orbit-torque magnetoresistive random-access memory

MRAM containing magnetic top contact

Multilayered magnetic free layer structure in magnetic tunnel junct...

Double magnetic tunnel junction device, formed by UVH wafer bonding

Nanosecond non-destructively erasable magnetoresistive random-acces...

Nanoscale magnetic tunnel junction arrays for sub-micrometer resolu...

Patents Applicationslast 30 patents

SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM-ACCESS MEMORY

SELECTIVELY BIASING MAGNETORESISTIVE RANDOM-ACCESS MEMORY CELLS

MRAM CONTAINING MAGNETIC TOP CONTACT

EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM

DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE, FORMED BY UVH WAFER BONDING

NANOSECOND NON-DESTRUCTIVELY ERASABLE MAGNETORESISTIVE RANDOM-ACCES...

MULTILAYERED MAGNETIC FREE LAYER STRUCTURE IN MAGNETIC TUNNEL JUNCT...

NANOSCALE MAGNETIC TUNNEL JUNCTION ARRAYS FOR SUB-MICROMETER RESOLU...