Virginia M. Robbins

Person

Loveland, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanostructured battery active materials and methods of producing same
- Patent number 10,243,207
- Issue date Mar 26, 2019
- OneD Material LLC
- Wanqing Cao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride device substrate containing a lattice parameter alt...
- Patent number 8,039,869
- Issue date Oct 18, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for oriented growth of nanowires on patterned substrates
- Patent number 7,951,422
- Issue date May 31, 2011
- Nanosys, Inc.
- Yaoling Pan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ohmic contact on p-type GaN
- Patent number 7,847,297
- Issue date Dec 7, 2010
- Avago Technologies ECBU IP (Singapore) Pte Ltd
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for oriented growth of nanowires on patterned substrates
- Patent number 7,785,922
- Issue date Aug 31, 2010
- Nanosys, Inc.
- Virginia Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge-emitting LED assembly
- Patent number 7,635,874
- Issue date Dec 22, 2009
- Avago Technologies ECBU IP (Singapore) Pte Ltd
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact on p-type GaN
- Patent number 7,495,314
- Issue date Feb 24, 2009
- Avago Technologies ECBU IP (Singapore) Pte Ltd
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for reducing operating voltage in a semiconductor device
- Patent number 7,473,941
- Issue date Jan 6, 2009
- Avago Technologies ECBU IP (Singapore) Pte Ltd
- Virginia M. Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride device substrate containing a lattice parameter alt...
- Patent number 7,273,798
- Issue date Sep 25, 2007
- Avago Technologies ECBU IP (Singapore) Pte Ltd
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fixed wavelength vertical cavity optical devices and method of manu...
- Patent number 6,953,702
- Issue date Oct 11, 2005
- Agilent Technologies, Inc.
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic multi-wavelength vertical-cavity surface emitting laser...
- Patent number 6,806,110
- Issue date Oct 19, 2004
- Agilent Technologies, Inc.
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically-pumped, multiple active region vertical-cavity surface...
- Patent number 6,771,680
- Issue date Aug 3, 2004
- Agilent Technologies, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching heterojunction interfaces
- Patent number 6,586,113
- Issue date Jul 1, 2003
- Agilent Technologies, Inc.
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonding of light emitting diode layers
- Patent number 5,502,316
- Issue date Mar 26, 1996
- Hewlett-Packard Company
- Fred A. Kish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer bonding of light emitting diode layers
- Patent number 5,376,580
- Issue date Dec 27, 1994
- Hewlett-Packard Company
- Fred A. Kish
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nanostructured Battery Active Materials and Methods of Producing Same
- Publication number 20190214641
- Publication date Jul 11, 2019
- OneD Material LLC
- Wanqing Cao
- C30 - CRYSTAL GROWTH
Information Patent Application
Nanostructured Battery Active Materials and Methods of Producing Same
- Publication number 20150086871
- Publication date Mar 26, 2015
- OneD Material LLC
- Wanqing Cao
- C30 - CRYSTAL GROWTH
Information Patent Application
EDGE-EMITTING LED ASSEMBLY
- Publication number 20100032703
- Publication date Feb 11, 2010
- Avago Technologies ECBU IP (Singapore) Pte. Ltd.
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC CONTACT ON p-TYPE GaN
- Publication number 20090179229
- Publication date Jul 16, 2009
- Avago Technologies ECBU IP (Singapore) Pte. Ltd.
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for oriented growth of nanowires on patterned substrates
- Publication number 20080038521
- Publication date Feb 14, 2008
- Nanosys, Inc.
- Virginia Robbins
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods for oriented growth of nanowires on patterned substrates
- Publication number 20080038520
- Publication date Feb 14, 2008
- Nanosys, Inc.
- Yaoling Pan
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Device Substrate Contaning A Lattice Parameter Alte...
- Publication number 20070278622
- Publication date Dec 6, 2007
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge-emitting LED assembly
- Publication number 20070069228
- Publication date Mar 29, 2007
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic contact on p-type GaN
- Publication number 20070069380
- Publication date Mar 29, 2007
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structures for reducing operating voltage in a semiconductor device
- Publication number 20070034853
- Publication date Feb 15, 2007
- Virginia M. Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride device substrate containing a lattice parameter alt...
- Publication number 20070032041
- Publication date Feb 8, 2007
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge-emitting LED light source
- Publication number 20070029555
- Publication date Feb 8, 2007
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbon germanium (SiCGe) substrate for a group III nitride-...
- Publication number 20070023761
- Publication date Feb 1, 2007
- Virginia M. Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting device and method of manufacture
- Publication number 20070019699
- Publication date Jan 25, 2007
- Virginia M. Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically-pumped, multiple active region vertical-cavity surface...
- Publication number 20040076209
- Publication date Apr 22, 2004
- David P. Bour
- B82 - NANO-TECHNOLOGY
Information Patent Application
Fixed wavelength vertical cavity optical devices and method of manu...
- Publication number 20030215969
- Publication date Nov 20, 2003
- Jeffrey N. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic multi-wavelength vertical-cavity surface emitting laser...
- Publication number 20030214992
- Publication date Nov 20, 2003
- Steven D. Lester
- H01 - BASIC ELECTRIC ELEMENTS

Virginia M. Robbins

Person

Patents Grantslast 30 patents

Nanostructured battery active materials and methods of producing same

Gallium nitride device substrate containing a lattice parameter alt...

Methods for oriented growth of nanowires on patterned substrates

Ohmic contact on p-type GaN

Methods for oriented growth of nanowires on patterned substrates

Edge-emitting LED assembly

Ohmic contact on p-type GaN

Structures for reducing operating voltage in a semiconductor device

Gallium nitride device substrate containing a lattice parameter alt...

Fixed wavelength vertical cavity optical devices and method of manu...

Monolithic multi-wavelength vertical-cavity surface emitting laser...

Electrically-pumped, multiple active region vertical-cavity surface...

Etching heterojunction interfaces

Wafer bonding of light emitting diode layers

Wafer bonding of light emitting diode layers

Patents Applicationslast 30 patents

Nanostructured Battery Active Materials and Methods of Producing Same

Nanostructured Battery Active Materials and Methods of Producing Same

EDGE-EMITTING LED ASSEMBLY

OHMIC CONTACT ON p-TYPE GaN

Methods for oriented growth of nanowires on patterned substrates

Methods for oriented growth of nanowires on patterned substrates

Gallium Nitride Device Substrate Contaning A Lattice Parameter Alte...

Edge-emitting LED assembly

Ohmic contact on p-type GaN

Structures for reducing operating voltage in a semiconductor device

Gallium nitride device substrate containing a lattice parameter alt...

Edge-emitting LED light source

Silicon carbon germanium (SiCGe) substrate for a group III nitride-...

Light emitting device and method of manufacture

Electrically-pumped, multiple active region vertical-cavity surface...

Fixed wavelength vertical cavity optical devices and method of manu...

Monolithic multi-wavelength vertical-cavity surface emitting laser...