Vitali Soukhoveev

Person

Gaithersburg, MD, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semi-polar III-nitride films and materials and method for making th...
- Patent number 9,443,727
- Issue date Sep 13, 2016
- Ostendo Technologies, Inc.
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and methods for controlling gas flows in a HVPE reactor
- Patent number 9,416,464
- Issue date Aug 16, 2016
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Free HCL used during pretreatment and AlGaN growth to control growt...
- Patent number 9,023,673
- Issue date May 5, 2015
- Ostendo Technologies, Inc.
- Lisa Shapovalov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy reactor internal component geometries for the growth of sup...
- Patent number 8,992,684
- Issue date Mar 31, 2015
- Ostendo Technologies, Inc.
- Oleg Kovalenkov
- C30 - CRYSTAL GROWTH
Information Patent Grant
HVPE apparatus and methods for growth of p-type single crystal grou...
- Patent number 8,647,435
- Issue date Feb 11, 2014
- Ostendo Technologies, Inc.
- Vladimir A. Dmitriev
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of planar non-polar {10-10} M-plane gallium nitride with hyd...
- Patent number 8,629,065
- Issue date Jan 14, 2014
- Ostendo Technologies, Inc.
- Philippe Spiberg
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,372,199
- Issue date Feb 12, 2013
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bulk GaN and AlGaN single crystals
- Patent number 8,092,596
- Issue date Jan 10, 2012
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,611,586
- Issue date Nov 3, 2009
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density AlGaN single crystal boules
- Patent number 7,556,688
- Issue date Jul 7, 2009
- Freiberger Compound Materials GmbH
- Yuri V. Melnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 7,279,047
- Issue date Oct 9, 2007
- Technologies and Devices, International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Bulk GaN and ALGaN single crystals
- Patent number 6,936,357
- Issue date Aug 30, 2005
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reactor for extended duration growth of gallium containing single c...
- Patent number 6,656,285
- Issue date Dec 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for achieving low defect density GaN single crystal boules
- Patent number 6,616,757
- Issue date Sep 9, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating bulk GaN single crystals
- Patent number 6,613,143
- Issue date Sep 2, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating bulk AlGaN single crystals
- Patent number 6,576,054
- Issue date Jun 10, 2003
- Technologies and Devices International, Inc.
- Yuri V. Melnik
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
Semi-Polar III-Nitride Films and Materials and Method for Making th...
- Publication number 20140353685
- Publication date Dec 4, 2014
- Vitali Soukhoveev
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Va...
- Publication number 20110108954
- Publication date May 12, 2011
- OSTENDO TECHNOLOGIES, INC.
- Philippe Spiberg
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...
- Publication number 20090286331
- Publication date Nov 19, 2009
- Freiberger Compound Materials GmbH
- Vladimir Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20090148984
- Publication date Jun 11, 2009
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...
- Publication number 20090130781
- Publication date May 21, 2009
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES
- Publication number 20090050913
- Publication date Feb 26, 2009
- Freiberger Compound Materials GmbH
- Yuri MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
BULK GaN AND AlGaN SINGLE CRYSTALS
- Publication number 20080257256
- Publication date Oct 23, 2008
- Yuri V. MELNIK
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20080022926
- Publication date Jan 31, 2008
- TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for simultaneously producing multiple wafers during a single...
- Publication number 20070032046
- Publication date Feb 8, 2007
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
HVPE apparatus for simultaneously producing multiple wafers during...
- Publication number 20060011135
- Publication date Jan 19, 2006
- Vladimir A. Dmitriev
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AIGaN single crystals
- Publication number 20050244997
- Publication date Nov 3, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for achieving low defect density AlGaN single crystal boules
- Publication number 20050212001
- Publication date Sep 29, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20050164044
- Publication date Jul 28, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Reactor for extended duration growth of gallium containing single c...
- Publication number 20050056222
- Publication date Mar 17, 2005
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk GaN and AlGaN single crystals
- Publication number 20030226496
- Publication date Dec 11, 2003
- Technologies & Devices International, Inc.
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...
- Publication number 20030221619
- Publication date Dec 4, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES
- Publication number 20030205193
- Publication date Nov 6, 2003
- Yuri V. Melnik
- C30 - CRYSTAL GROWTH

Vitali Soukhoveev

Person

Patents Grantslast 30 patents

Semi-polar III-nitride films and materials and method for making th...

Apparatus and methods for controlling gas flows in a HVPE reactor

Free HCL used during pretreatment and AlGaN growth to control growt...

Epitaxy reactor internal component geometries for the growth of sup...

HVPE apparatus and methods for growth of p-type single crystal grou...

Growth of planar non-polar {10-10} M-plane gallium nitride with hyd...

Bulk GaN and AlGaN single crystals

Bulk GaN and AlGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density AlGaN single crystal boules

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and ALGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Method for achieving low defect density GaN single crystal boules

Method for fabricating bulk GaN single crystals

Method for fabricating bulk AlGaN single crystals

Patents Applicationslast 30 patents

Semi-Polar III-Nitride Films and Materials and Method for Making th...

Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Va...

METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...

BULK GaN AND AlGaN SINGLE CRYSTALS

METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE...

METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES

BULK GaN AND AlGaN SINGLE CRYSTALS

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

Method for simultaneously producing multiple wafers during a single...

HVPE apparatus for simultaneously producing multiple wafers during...

Bulk GaN and AIGaN single crystals

Method for achieving low defect density AlGaN single crystal boules

Bulk GaN and AlGaN single crystals

Reactor for extended duration growth of gallium containing single c...

Bulk GaN and AlGaN single crystals

REACTOR FOR EXTENDED DURATION GROWTH OF GALLIUM CONTAINING SINGLE C...

METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGAN SINGLE CRYSTAL BOULES