Vivien Schroeder

Person

Ottendorf-Okrilla, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Mol insitu Pt rework sequence
- Patent number 8,883,586
- Issue date Nov 11, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a capacitor formed in the metalliza...
- Patent number 8,790,975
- Issue date Jul 29, 2014
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned multiple gate transistor formed on a bulk substrate
- Patent number 8,679,924
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-K metal gate electrode structures...
- Patent number 8,440,559
- Issue date May 14, 2013
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,357,575
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-k metal gate electrode structures...
- Patent number 8,298,894
- Issue date Oct 30, 2012
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,247,281
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOL INSITU PT REWORK SEQUENCE
- Publication number 20150028431
- Publication date Jan 29, 2015
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20130017679
- Publication date Jan 17, 2013
- GLOBALFOUNDRIES INC.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20120282764
- Publication date Nov 8, 2012
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOL INSITU PT REWORK SEQUENCE
- Publication number 20120248551
- Publication date Oct 4, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Capacitor Formed in the Metalliza...
- Publication number 20120223412
- Publication date Sep 6, 2012
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate
- Publication number 20110291196
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20100330790
- Publication date Dec 30, 2010
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20100301427
- Publication date Dec 2, 2010
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS

Vivien Schroeder

Person

Patents Grantslast 30 patents

Mol insitu Pt rework sequence

Semiconductor device comprising a capacitor formed in the metalliza...

Self-aligned multiple gate transistor formed on a bulk substrate

Work function adjustment in high-K metal gate electrode structures...

Technique for exposing a placeholder material in a replacement gate...

Work function adjustment in high-k metal gate electrode structures...

Technique for exposing a placeholder material in a replacement gate...

Patents Applicationslast 30 patents

MOL INSITU PT REWORK SEQUENCE

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

MOL INSITU PT REWORK SEQUENCE

Semiconductor Device Comprising a Capacitor Formed in the Metalliza...

Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...